Optocoupler 4 pin SMD package with infrared diodes KTP KTP3H4BTA high isolation voltage halogen free
Key Attributes
Model Number:
KTP3H4(B)-(TA)
Product Custom Attributes
Fall Time:
18us
Rise Time:
18us
Vce Saturation(VCE(sat)):
200mV@20mA,1mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Load Type:
Phototransistor
Current Transfer Ratio:
300%;20%
Forward Current(If):
50mA
Input Type:
AC,DC
Isolation Voltage(Vrms):
3.75kV
Pd - Power Dissipation:
200mW
Number Of Channels:
1
Mfr. Part #:
KTP3H4(B)-(TA)
Package:
SOP-4
Product Description
Product Overview
The KTP3H4 series are optocouplers packaged in a 4-pin small outline SMD package. They consist of two infrared emitting diodes connected in inverse parallel, optically coupled to a phototransistor detector. These devices offer high isolation voltage and compliance with halogen-free standards.
Product Attributes
- Brand: KTP Semiconductor
- Certifications: Halogen Free (Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Absolute Maximum Ratings (Ta=25C) | ||||||
| Forward current | IF | 50 | mA | |||
| Peak forward current (10s pulse) | IF | 1 | A | (10s pulse) | ||
| Power Dissipation (No derating required up to Ta=100) | PD | 70 | mW | |||
| Power dissipation (Output) | PC | 150 | mW | |||
| Derating factor (above Ta=80) | 3.7 | mW/ | (above Ta=80) | |||
| Collector and emitter Voltage | VCEO | 80 | V | |||
| Emitter and Collector Voltage | VECO | 6 | V | |||
| Total Consume Power | PTOT | 200 | mW | |||
| Isolation Voltage*1 | Viso | 3750 | Vrms | AC for 1 minute, 40~60%RH | ||
| Operating temperature | TOPR | -55 | 100 | |||
| Storage temperature | TSTG | -55 | 125 | |||
| Soldering temperature*2 | TSOL | 260 | (Soldering time is 10 seconds) | |||
| Electrical Characteristics (Ta=25 unless specified otherwise) | ||||||
| Forward voltage | VF | 1.2 | 1.4 | V | IF=20mA | |
| Input capacitance | Cin | 50 | 250 | pF | V=0, f=1kHz | |
| Collector-Emitter dark current | ICEO | 100 | nA | VCE=20V, IF =0mA | ||
| Collector-Emitter breakdown voltage | VCEO | 80 | V | IC=0.1mA, IF=0mA | ||
| Emitter-Collector breakdown voltage | VECO | 6 | V | IE=0.01mA, IF=0mA | ||
| Collector-Emitter saturation voltage | VCE(sat) | 0.1 | 0.2 | V | IF=20mA, IC=1mA | |
| Isolation resistance | RISO | 5x1010 | 1011 | VIO=500Vdc, 40~60% R.H. | ||
| Floating capacitance | Cf | 0.6 | 1.0 | pF | VIO=0V, f=1MHz | |
| Response Time (Rise) | tr | 18 | s | VCE=2V, IC=2mA, RL=100 | ||
| Response Time (Fall) | tf | 18 | s | VCE=2V, IC=2mA, RL=100 | ||
| Transfer Characteristics (Ta=25 unless specified otherwise) | ||||||
| Current Transfer Ratio (KTP3H4) | CTR | 20 | 300 | IF=1mA, VCE=5V | ||
| Current Transfer Ratio (KTP3H4A) | CTR | 50 | 150 | IF=1mA, VCE=5V | ||
| Current Transfer Ratio (KTP3H4B) | CTR | 100 | 300 | IF=1mA, VCE=5V | ||
2508191745_KTP-KTP3H4-B--TA_C50377103.pdf
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