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quality VISHAY 4N35 Optocoupler Featuring Phototransistor Output and Base Connection for Reed Relay Driving factory
quality VISHAY 4N35 Optocoupler Featuring Phototransistor Output and Base Connection for Reed Relay Driving factory

VISHAY 4N35 Optocoupler Featuring Phototransistor Output and Base Connection for Reed Relay Driving

Key Attributes
Model Number: 4N35
Product Custom Attributes
Fall Time:
-
Output Current:
50mA
Rise Time:
-
Vce Saturation(VCE(sat)):
-
Operating Temperature:
-55℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Current Transfer Ratio:
40%;100%
Voltage - Forward(Vf):
1.2V
Forward Current(If):
60mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
4N35
Package:
DIP-6
Product Description

Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection

This datasheet presents Vishay industry-standard single-channel phototransistor couplers, including the 4N35, 4N36, 4N37, and 4N38 families. Each optocoupler comprises a gallium arsenide infrared LED and a silicon NPN phototransistor. These devices offer high isolation performance, achieved through Vishay's double molding isolation manufacturing process and adherence to the ISO9001 quality program. They are available in lead-formed configurations suitable for surface mounting and are compliant with RoHS Directive 2002/95/EC and WEEE 2002/96/EC. Applications include AC mains detection, reed relay driving, switch mode power supply feedback, telephone ring detection, logic ground isolation, and logic coupling with high-frequency noise rejection.

Product Attributes

  • Brand: Vishay Semiconductors
  • Type: Optocoupler, Phototransistor Output, with Base Connection
  • Certifications: UL, cUL, BSI, FIMKO, CQC, DIN EN 60747-5-5 (pending with option 1)
  • Material: Gallium Arsenide Infrared LED and Silicon NPN Phototransistor
  • Package: Industry standard dual-in-line 6 pin package (DIP-6), SMD-6

Technical Specifications

ParameterTest ConditionSymbol4N35 (MIN)4N35 (TYP)4N35 (MAX)4N36 (MIN)4N36 (TYP)4N36 (MAX)4N37 (MIN)4N37 (TYP)4N37 (MAX)4N38 (MIN)4N38 (TYP)4N38 (MAX)Unit
INPUT
Forward voltageIF = 10 mAVF1.21.51.21.51.21.51.21.5V
Forward voltageIF = 10 mA, Tamb = - 55 CVF0.91.31.70.91.31.70.91.31.70.91.31.7V
Reverse currentVR = 6 VIR0.1100.1100.1100.110A
CapacitanceVR = 0 V, f = 1 MHzCO25252525pF
OUTPUT
Collector emitter breakdown voltageIC = 1 mABVCEO30303080V
Emitter base breakdown voltageIE = 100 ABVECO7777V
Collector base breakdown voltageIC = 100 A, IB = 1 ABVCBO70707080V
Collector emitter leakage currentVCE = 10 V, IF = 0ICEO50505050nA
Collector emitter leakage currentVCE = 60 V, IF = 0ICEO50nA
Collector emitter leakage currentVCE = 30 V, IF = 0, Tamb = 100 CICEO500500500500A
Collector emitter leakage currentVCE = 60 V, IF = 0, Tamb = 100 CICEO6A
Collector emitter capacitanceVCE = 0CCE6666pF
COUPLER
Isolation test voltaget = 1 sVISO5000500050005000VRMS
Creepage distance 7 7 7 7mm
Clearance distance 7 7 7 7mm
Isolation thicknessbetween emitter and detector 0.4 0.4 0.4 0.4mm
Comparative tracking indexDIN IEC 112/VDE 0303, part 1 175 175 175 175
Isolation resistanceVIO = 500 V, Tamb = 25 CRIO 1012 1012 1012 1012
Isolation resistanceVIO = 500 V, Tamb = 100 CRIO 1011 1011 1011 1011
CURRENT TRANSFER RATIO (Tamb = 25 C)
CTRdcVCE = 10 V, IF = 10 mA100100100%
CTRdcVCE = 10 V, IF = 20 mA20%
CTRdcVCE = 10 V, IF = 10 mA, TA = - 55 C to + 100 C405040504050%
CTRdcVCE = 10 V, IF = 20 mA30%
SWITCHING CHARACTERISTICS (Tamb = 25 C)
Turn-on timeVCC = 5 V, IC = 2 mA, RL = 100 ton10101010s
Turn-off timeVCC = 5 V, IC = 2 mA, RL = 100 toff10101010s

2410121742_VISHAY-4N35_C506472.pdf

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