Low Profile SMD Optocoupler VISHAY TCLT1109 with Gallium Arsenide Infrared LED and Transistor Output
Key Attributes
Model Number:
TCLT1109
Product Custom Attributes
Fall Time:
4.7us
Output Current:
50mA
Rise Time:
3us
Vce Saturation(VCE(sat)):
300mV@1mA,10mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Voltage - Forward(Vf):
1.25V
Forward Current(If):
60mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
TCLT1109
Package:
SOP-5-300mil
Product Description
Vishay Semiconductors TCLT110 Series Optocoupler
The TCLT110 series optocoupler features a phototransistor optically coupled to a gallium arsenide infrared-emitting diode within a 5-lead SOP-6L package. Designed for applications requiring electrical isolation, it offers a low profile, SMD compatibility, and a high isolation test voltage of 5000 VRMS. This series is suitable for switchmode power supplies, computer peripheral interfaces, and microprocessor system interfaces, providing DC input with transistor output and a special construction for enhanced reliability.
Product Attributes
- Brand: Vishay Semiconductors
- Package Type: SOP-6L5, Half Pitch, Long Mini-Flat Package
- Certifications: UL1577, CSA E76222 22.2 bulletin 5A, BSI IEC 60950 IEC 60065, DIN EN 60747-5-5, FIMKO, CQC
- Material Categorization: Defined at www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| Reverse voltage | VR | 6 | V | ||||
| Forward current | IF | 60 | mA | ||||
| Forward surge current | tP | IFSM | 1.5 | A | ≤ 10 µs | ||
| Power dissipation | Pdiss | 100 | mW | (Input) | |||
| Junction temperature | Tj | 125 | °C | (Input) | |||
| Collector emitter voltage | VCEO | 80 | V | (Output) | |||
| Emitter collector voltage | VECO | 7 | V | (Output) | |||
| Collector current | IC | 50 | mA | (Output) | |||
| Collector peak current | tP/T = 0.5, tP ≤ 10 ms | ICM | 100 | mA | (Output) | ||
| Power dissipation | Pdiss | 150 | mW | (Output) | |||
| Junction temperature | Tj | 125 | °C | (Output) | |||
| Isolation test voltage (RMS) | VISO | 5000 | VRMS | ||||
| Total power dissipation | Ptot | 250 | mW | ||||
| Operating ambient temperature range | Tamb | -55 | 100 | °C | |||
| Storage temperature range | Tstg | -55 | 125 | °C | |||
| Soldering temperature | (1) | Tsld | 260 | °C | Wave soldering three cycles allowed | ||
| Electrical Characteristics | |||||||
| Forward voltage | IF = ± 50 mA | VF | 1.25 | 1.6 | V | ||
| Junction capacitance | VR = 0 V, f = 1 MHz | Cj | 50 | pF | |||
| Collector emitter voltage | IC = 1 mA | VCEO | 70 | V | |||
| Emitter collector voltage | IE = 100 µA | VECO | 7 | V | |||
| Collector emitter leakage current | VCE = 20 V, IF = 0 A | ICEO | 10 | 100 | nA | ||
| Collector emitter saturation voltage | IF = 10 mA, IC = 1 mA | VCEsat | 0.3 | V | |||
| Cut-off frequency | VCE = 5 V, IF = 10 mA, RL = 100 Ω | fc | 110 | kHz | |||
| Coupling capacitance | f = 1 MHz | Ck | 0.3 | pF | |||
| Current Transfer Ratio (CTR) | |||||||
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 50 | 600 | % | TCLT1100 | |
| IC/IF | VCE = 5 V, IF = 10 mA | CTR | 63 | 125 | % | TCLT1102 | |
| IC/IF | VCE = 5 V, IF = 10 mA | CTR | 100 | 200 | % | TCLT1103 | |
| IC/IF | VCE = 5 V, IF = 10 mA | CTR | 160 | 320 | % | TCLT1104 | |
| IC/IF | VCE = 5 V, IF = 1 mA | CTR | 22 | 45 | % | TCLT1102 | |
| IC/IF | VCE = 5 V, IF = 1 mA | CTR | 34 | 70 | % | TCLT1103 | |
| IC/IF | VCE = 5 V, IF = 1 mA | CTR | 56 | 100 | % | TCLT1104 | |
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 50 | 150 | % | TCLT1105 | |
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 100 | 300 | % | TCLT1106 | |
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 80 | 160 | % | TCLT1107 | |
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 130 | 260 | % | TCLT1108 | |
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 200 | 400 | % | TCLT1109 | |
| Safety and Insulation Rated Parameters | |||||||
| Partial discharge test voltage - routine test | 100 %, ttest = 1 s | Vpd | 2.0 | kV | |||
| Partial discharge test voltage - lot test (sample test) | tTr = 60 s, ttest = 10 s, (see figure 2) | VIOTM | 8 | kV | |||
| Partial discharge test voltage - lot test (sample test) | tTr = 60 s, ttest = 10 s, (see figure 2) | Vpd | 1.68 | kV | |||
| Insulation resistance | VIO = 500 V | RIO | 1012 | Ω | |||
| Insulation resistance | VIO = 500 V, Tamb = 100 °C | RIO | 1011 | Ω | |||
| Forward current | Isi | 130 | mA | (Safety) | |||
| Power dissipation | Pso | 265 | mW | (Safety) | |||
| Rated impulse voltage | VIOTM | 8 | kV | ||||
| Safety temperature | Tsi | 150 | °C | ||||
| Clearance distance | 8.0 | mm | |||||
| Creepage distance | 8.0 | mm | |||||
| Insulation distance (internal) | 0.40 | mm | |||||
| Switching Characteristics | |||||||
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) | td | 3.0 | µs | |||
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) | tr | 3.0 | µs | |||
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) | ton | 6.0 | µs | |||
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) | ts | 0.3 | µs | |||
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) | tf | 4.7 | µs | |||
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) | toff | 5.0 | µs | |||
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) | ton | 9.0 | µs | |||
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) | toff | 10.0 | µs | |||
2410121757_VISHAY-TCLT1109_C139540.pdf
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