SOIC 8 package dual channel optocoupler VISHAY ILD206T with gallium arsenide LED and phototransistor

Key Attributes
Model Number: ILD206T
Product Custom Attributes
Rise Time:
3us@2mA,100Ω
Fall Time:
4.7us@2mA,100Ω
Output Current:
-
Vce Saturation(VCE(sat)):
400mV@2.5mA,10mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Load Type:
Phototransistor
Voltage - Forward(Vf):
1.2V
Input Type:
DC
Isolation Voltage(Vrms):
4kV
Number Of Channels:
2
Mfr. Part #:
ILD206T
Package:
SO-8
Product Description

Product Overview

The ILD205T, ILD206T, ILD207T, ILD211T, and ILD213T are dual-channel optocouplers featuring a gallium arsenide infrared LED and a silicon NPN phototransistor. They enable signal transmission with high electrical isolation between input and output, suitable for high-density surface-mounting applications due to their SOIC-8 package. The devices offer a specified minimum and maximum CTR for precise electrical design and a high BVCEO of 70 V for increased safety margin.

Product Attributes

  • Brand: Vishay Semiconductors
  • Package: SOIC-8
  • Certifications: UL1577 (file no. E52744), cUL (file no. E52744, equivalent to CSA bulletin 5A)
  • Material categorization: Refer to www.vishay.com/doc?99912
  • Availability: Tape and reel option (conforms to EIA standard 481-2)

Technical Specifications

Part NumberAgency Certified/PackageCTR (%) (10 mA)CTR (%) (1 mA)Isolation Test VoltageBVCEO
ILD205TUL, cUL / SOIC-840 to 8013 to 304000 VRMS70 V
ILD206TUL, cUL / SOIC-863 to 12522 to 454000 VRMS70 V
ILD207TUL, cUL / SOIC-8100 to 20034 to 704000 VRMS70 V
ILD211TUL, cUL / SOIC-8 20-4000 VRMS70 V
ILD213TUL, cUL / SOIC-8 100-4000 VRMS70 V

Absolute Maximum Ratings

ParameterTest ConditionSymbolValueUnit
Peak reverse voltageVR6V
Peak pulsed current1 s, 300 pps1A
Continuous forward current per channelIF30mA
Power dissipationPdiss50mW
Collector emitter breakdown voltageBVCEO70V
Emitter collector breakdown voltageBVECO7V
Power dissipation per channelPdiss125mW
Total package dissipation(2 LEDs and 2 detectors, 2 channels)Ptot350mW
Storage temperatureTstg-55 to +150C
Operating temperatureTamb-55 to +100C
Soldering time from 260 C(1)Tsld10s

Electrical Characteristics

ParameterTest ConditionSymbolMin.Typ.Max.Unit
Forward voltageIF = 10 mAVF-1.21.55V
Reverse currentVR = 6 VIR-0.1100A
CapacitanceVR = 0 VCO-25-pF
Collector emitter breakdown voltageIC = 10 ABVCEO70--V
Emitter collector breakdown voltageIE = 10 ABVECO7--V
Collector emitter leakage currentVCE = 10 V, IF = 0 AICEO-550nA
Collector emitter capacitanceVCE = 0 VCCE-10-pF
Collector emitter saturation voltageIF = 10 mA, IC = 2.5 mAVCEsat--0.4V
Capacitance (input to output)CIO-0.5-pF

Switching Characteristics

ParameterTest ConditionSymbolMin.Typ.Max.Unit
Delay timeVS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)td-3-s
Rise timeVS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)tr-3-s
Fall timeVS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)tf-4.7-s
Storage timeVS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)ts-0.3-s
Turn-on timeVS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)ton-6-s
Turn-off timeVS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)toff-5-s
Turn-on timeVS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2)ton-3-s
Turn-off timeVS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2)toff-10-s

Safety and Insulation Ratings

ParameterTest ConditionSymbolValueUnit
Climatic classificationAccording to IEC 68 part 155/100/21
Comparative tracking indexCTI175
Tested withstanding isolation voltageAccording to UL1577, t = 1 sVISO4000VRMS
Maximum transient isolation voltageAccording to DIN EN 60747-5-5VIOTM6000Vpeak
Maximum repetitive peak isolation voltageAccording to DIN EN 60747-5-5VIORM560Vpeak
Isolation resistanceTamb = 25 C, VIO = 500 VRIO 1012
Isolation resistanceTamb = 100 C, VIO = 500 VRIO 1011
Output safety powerPSO350mW
Input safety currentISI150mA
Input safety temperatureTS165C
Creepage distanceDIP-6, option 64mm
Clearance distanceDIP-6, option 64mm
Insulation thickness0.2mm

2410121733_VISHAY-ILD206T_C144955.pdf

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