Low coupling capacitance optocoupler VISHAY SFH6286-3T with end stackability and 254 mm lead spacing

Key Attributes
Model Number: SFH6286-3T
Product Custom Attributes
Rise Time:
3.5us@2mA,100Ω
Output Current:
50mA
Fall Time:
5us
Vce Saturation(VCE(sat)):
250mV@0.8mA,1mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
55V
Reverse Voltage:
-
Current Transfer Ratio:
100%;320%
Voltage - Forward(Vf):
1.1V
Forward Current(If):
50mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
AC,DC
Isolation Voltage(Vrms):
5.3kV
Mfr. Part #:
SFH6286-3T
Package:
SMD-4P
Product Description

Product Overview

The SFH628A (DIP) and SFH6286 (SMD) are optocouplers featuring a high current transfer ratio, low coupling capacitance, and high isolation voltage. They utilize a GaAs infrared emitting diode optically coupled to a silicon planar phototransistor detector, housed in plastic DIP-4 or SMD packages. These devices are designed for signal transmission between electrically separated circuits and offer end-stackability with 2.54 mm lead spacing. With option 6, they achieve creepage and clearance distances greater than 8 mm and comply with IEC 60950 for reinforced insulation up to 400 VRMS or DC. Key advantages include high common mode interference immunity, low coupling capacitance, good CTR linearity, low CTR degradation, and a high collector-emitter voltage of 55 V. Applications include telecom, industrial controls, battery-powered equipment, and office machines.

Product Attributes

  • Brand: Vishay Semiconductors
  • Certifications: UL1577 (file no. E52744), DIN EN 60747-5-5 (VDE0884-5) (available with option 1), BSI IEC 60950, IEC 60065
  • Material categorization: Refer to www.vishay.com/doc?99912 for definitions of compliance.
  • Package Types: DIP-4, SMD-4

Technical Specifications

ParameterTest ConditionSymbolSFH628A-2SFH6286-2SFH628A-3SFH6286-3SFH628A-4SFH6286-4Unit
Absolute Maximum Ratings
DC forward currentTamb = 25 CIF± 50± 50± 50± 50± 50± 50mA
Surge forward currentt ≤ 10 μsIFSM± 2.5± 2.5± 2.5± 2.5± 2.5± 2.5A
Power dissipationTamb = 25 CPdiss767676767676mW
Collector emitter voltageVCEO555555555555V
Emitter collector voltageVECO777777V
Collector currentTamb = 25 CIC505050505050mA
Collector currenttp ≤ 1 msIC100100100100100100mA
Power dissipationTamb = 25 CPdiss150150150150150150mW
Isolation test voltageVISO530053005300530053005300VRMS
Storage temperature rangeTstg-55 to +150-55 to +150-55 to +150-55 to +150-55 to +150-55 to +150C
Ambient temperature rangeTamb-55 to +100-55 to +100-55 to +100-55 to +100-55 to +100-55 to +100C
Electrical Characteristics
Forward voltageIF = ± 5 mAVF1.1 / 1.51.1 / 1.51.1 / 1.51.1 / 1.51.1 / 1.51.1 / 1.5V
CapacitanceVR = 0 V, f = 1 MHzCO454545454545pF
Collector emitter leakage currentVCE = 10 VICEO10 / 20010 / 20010 / 20010 / 20010 / 20010 / 200nA
Collector emitter capacitanceVCE = 5 V, f = 1 MHzCCE777777pF
Collector emitter saturation voltageIF = ± 1 mA, IC = 0.5 mAVCEsat0.25 / 0.40.25 / 0.4----V
Collector emitter saturation voltageIF = ± 1 mA, IC = 0.8 mAVCEsat--0.25 / 0.40.25 / 0.4--V
Collector emitter saturation voltageIF = ± 1 mA, IC = 1.25 mAVCEsat----0.25 / 0.40.25 / 0.4V
Current Transfer Ratio
CTRIF = ± 1 mA, VCE = 0.5 VCTR63 to 20063 to 200100 to 320100 to 320160 to 500160 to 500%
CTRIF = ± 0.5 mA, VCE = 1.5 VCTR32 to 10032 to 10050 to 16050 to 16080 to 25080 to 250%
Switching Characteristics
Turn-on timeVCC = 5 V, IC = 2 mA, RL = 100 Ωton666666μs
Rise timeVCC = 5 V, IC = 2 mA, RL = 100 Ωtr3.53.53.53.53.53.5μs
Turn-off timeVCC = 5 V, IC = 2 mA, RL = 100 Ωtoff5.55.55.55.55.55.5μs
Fall timeVCC = 5 V, IC = 2 mA, RL = 100 Ωtf555555μs
Safety and Insulation Ratings
Comparative tracking indexCTI175175175175175175
Creepage distance (Standard DIP-8)777777mm
Clearance distance (Standard DIP-8)777777mm
Creepage distance (400 mil DIP-8)888888mm
Clearance distance (400 mil DIP-8)888888mm
Insulation thickness, reinforced rated per IEC 60950 2.10.5.10.40.40.40.40.40.4mm

2410121733_VISHAY-SFH6286-3T_C144899.pdf

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