High Isolation Dual Channel Optocoupler VISHAY ILD217T with Silicon NPN Phototransistor in SOIC 8 Package

Key Attributes
Model Number: ILD217T
Product Custom Attributes
Fall Time:
-
Rise Time:
-
Output Current:
2.5mA
Vce Saturation(VCE(sat)):
400mV@10mA,2.5mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Current Transfer Ratio:
100%;120%
Voltage - Forward(Vf):
1.2V
Forward Current(If):
30mA
Pd - Power Dissipation:
350mW
Number Of Channels:
2
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
4kV
Mfr. Part #:
ILD217T
Package:
SO-8
Product Description

Product Overview

The ILD217T is a dual-channel optocoupler featuring a gallium arsenide infrared LED and a silicon NPN phototransistor. It enables signal transmission with high electrical isolation between input and output. Designed for high-density, space-limited applications, it comes in a surface-mountable SOIC-8 package, eliminating through-hole requirements and conforming to surface-mounted device standards. Its high BVCEO of 70 V offers a significant safety margin over the industry standard.

Product Attributes

  • Brand: Vishay Semiconductors
  • Package: SOIC-8
  • Certifications: UL1577, cUL
  • Material categorization: Refer to www.vishay.com/doc?99912

Technical Specifications

ParameterTest ConditionSymbolMin.Typ.Max.Unit
INPUT
IF = 10 mAVF1.21.55V
VR = 6 VIR0.1100A
OUTPUTIC = 10 ABVCEO70V
IE = 10 ABVECO7V
VCE = 10 V, IF = 0 AICEO550nA
COUPLERIF = 10 mA, IC = 2.5 mAVCEsat0.4V
CIO0.5pF
RIO100G
CURRENT TRANSFER RATIOVCE = 5 V, IF = 1 mACTR100120%
SAFETY AND INSULATION RATINGSCTI175399
VIOTM6000V
VIORM560V
Creepage distance4mm
Clearance distance4mm
Insulation thickness0.2mm

2410121757_VISHAY-ILD217T_C145010.pdf

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