Electrical isolation optocoupler VISHAY TCLT1002 with phototransistor output UL cUL VDE certified SOP4L package

Key Attributes
Model Number: TCLT1002
Product Custom Attributes
Fall Time:
4.7us
Rise Time:
3us
Output Current:
50mA
Vce Saturation(VCE(sat)):
300mV@10mA,1mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Current Transfer Ratio:
125%;63%
Voltage - Forward(Vf):
1.25V
Forward Current(If):
60mA
Pd - Power Dissipation:
250mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
TCLT1002
Package:
SOP-4
Product Description

Product Overview

The TCLT100. series optocoupler features a phototransistor output optically coupled to a gallium arsenide infrared-emitting diode, housed in a 4-lead SOP4L package. Designed for applications requiring electrical isolation, it offers a low profile, high isolation voltage (VIORM = 1050 V), and flexible Current Transfer Ratio (CTR) options. It is suitable for use in switchmode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

  • Brand: Vishay Semiconductors
  • Package: SOP-4L, Long Mini-Flat Package
  • Certifications: UL1577, CSA (cUL), BSI, DIN EN 60747-5-5 (VDE 0884), FIMKO, CQC
  • Material: Refer to www.vishay.com/doc?99912 for material categorization.

Technical Specifications

Part NumberAgency Certified/PackageCTR (%) 5 mACTR (%) 10 mACTR (%) 1 mACTR (%) 5 mACTR (%) 5 mACTR (%) 5 mACTR (%) 5 mACTR (%) 5 mACTR (%) 5 mA
TCLT1000UL, cUL, VDE, BSI, FIMKO SOP-4L50 to 600
TCLT1002UL, cUL, VDE, BSI, FIMKO SOP-4L63 to 12522 to 45
TCLT1003UL, cUL, VDE, BSI, FIMKO SOP-4L100 to 20034 to 70
TCLT1004UL, cUL, VDE, BSI, FIMKO SOP-4L160 to 32056 to 100
TCLT1005UL, cUL, VDE, BSI, FIMKO SOP-4L50 to 150
TCLT1006UL, cUL, VDE, BSI, FIMKO SOP-4L100 to 300
TCLT1007UL, cUL, VDE, BSI, FIMKO SOP-4L80 to 160
TCLT1008UL, cUL, VDE, BSI, FIMKO SOP-4L130 to 260
TCLT1009UL, cUL, VDE, BSI, FIMKO SOP-4L200 to 400
ParameterConditionSymbolMin.Typ.Max.Unit
Forward voltageIF = 50 mAVF-1.251.6V
Junction capacitanceVR = 0 V, f = 1 MHzCj-50-pF
Collector emitter voltageIC = 1 mAVCEO70--V
Emitter collector voltageIE = 100 AVECO7--V
Collector emitter cut-off currentVCE = 20 V, IF = 0 AICEO-10100nA
Collector emitter saturation voltageIF = 10 mA, IC = 1 mAVCEsat--0.3V
Cut-off frequencyVCE = 5 V, IF = 10 mA, RL = 100 fc-110-kHz
Coupling capacitancef = 1 MHzCk-0.3-pF
Delay timeVS = 5 V, IC = 2 mA, RL = 100 td-3-s
Rise timeVS = 5 V, IC = 2 mA, RL = 100 tr-3-s
Fall timeVS = 5 V, IC = 2 mA, RL = 100 tf-4.7-s
Storage timeVS = 5 V, IC = 2 mA, RL = 100 ts-0.3-s
Turn-on timeVS = 5 V, IC = 2 mA, RL = 100 ton-6-s
Turn-off timeVS = 5 V, IC = 2 mA, RL = 100 toff-5-s
Turn-on timeVS = 5 V, IF = 10 mA, RL = 1 kton-9-s
Turn-off timeVS = 5 V, IF = 10 mA, RL = 1 ktoff-10-s
ParameterConditionSymbolValueUnit
Partial discharge test voltage - routine test100 %, ttest = 1 sVpd2kV
Partial discharge test voltage - lot test (sample test)tTr = 60 s, ttest = 10 sVIOTM8kVpeak
Partial discharge test voltage - lot test (sample test)tTr = 60 s, ttest = 10 sVpd1.68kVpeak
Isolation test voltage (RMS)VISO5000VRMS
Insulation resistanceVIO = 500 VRIO1012
Insulation resistanceVIO = 500 V, Tamb = 100 CRIO1011
Insulation resistanceVIO = 500 V, Tamb = 150 C (construction test only)RIO109
Forward currentIsi130mA
Power dissipationPso265mW
Rated impulse voltageVIOTM8kV
Safety temperatureTsi150C
Comparative tracking indexCTI175
Clearance distance8.0mm
Creepage distance8.0mm
Insulation distance (internal)0.40mm

2410121811_VISHAY-TCLT1002_C3035008.pdf

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