Low profile half pitch mini flat package optocoupler VISHAY TCMT1109 with phototransistor output
Key Attributes
Model Number:
TCMT1109
Product Custom Attributes
Fall Time:
7us
Rise Time:
5.5us@2mA,100Ω
Output Current:
50mA
Vce Saturation(VCE(sat)):
300mV@1mA,10mA
Operating Temperature:
-40℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;400%
Voltage - Forward(Vf):
1.35V
Forward Current(If):
60mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
TCMT1109
Package:
SOP-4-1.27mm
Product Description
Product Overview
The TCMT110. series optocoupler features a phototransistor output optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-pin, low-profile, half-pitch mini-flat package, it offers high safety requirements due to a fixed distance between input and output. Key advantages include low coupling capacitance, a wide ambient temperature range, and CTR selection into groups.
Product Attributes
- Brand: Vishay Semiconductors
- Product Line: TCMT110. Series
- Certifications: UL1577, cUL, DIN EN 60747-5-5 (VDE 0884-5), FIMKO: FI EN 60950-1:2006, BSI: BS EN60065:2002 BS EN60950-1:2006, CQC GB 8898-2011, GB 4943.1-2011
- Package Type: SSOP-4
- Package Dimensions: 7.21 mm
- Availability: Tape and reel only
Technical Specifications
| Part Number | Agency Certified/Package | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA |
| TCMT1100 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 50 to 600 | ||||||||
| TCMT1101 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 40 to 80 | ||||||||
| TCMT1102 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 63 to 125 | ||||||||
| TCMT1103 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 100 to 200 | ||||||||
| TCMT1104 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 160 to 320 | ||||||||
| TCMT1105 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 50 to 150 | ||||||||
| TCMT1106 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 100 to 300 | ||||||||
| TCMT1107 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 80 to 160 | ||||||||
| TCMT1108 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 130 to 260 | ||||||||
| TCMT1109 | UL, cUL, FIMKO, BSI, VDE SSOP-4 | 200 to 400 |
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward voltage | IF = 50 mA | VF | 1.35 | 1.6 | V | |
| Junction capacitance | VR = 0, f = 1 MHz | Cj | 8 | pF | ||
| Collector emitter voltage | IC = 100 A | VCEO | 70 | V | ||
| Emitter collector voltage | IE = 100 A | VECO | 7 | V | ||
| Collector dark current | VCE = 20 V, IF = 0 A | ICEO | 100 | nA | ||
| Collector emitter saturation voltage | IF = 10 mA, IC = 1 mA | VCEsat | 0.3 | V | ||
| Cut-off frequency | VCE = 5 V, IF = 10 mA, RL = 100 | fc | 100 | kHz | ||
| Coupling capacitance | f = 1 MHz | Ck | 0.3 | pF |
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | td | 4.0 | s | ||
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | tr | 5.5 | s | ||
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | tf | 7.0 | s | ||
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | ts | 1.5 | s | ||
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | ton | 9.5 | s | ||
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | toff | 8.5 | s | ||
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) | ton | 3.0 | s | ||
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) | toff | 20.0 | s |
| Parameter | Test Condition | Symbol | Value | Unit |
| AC isolation test voltage (RMS) | Related to standard climate 23/50 DIN 50014 | VISO | 3750 | VRMS |
| Total power dissipation | Ptot | 250 | mW | |
| Operating ambient temperature range | Tamb | -40 to +100 | C | |
| Storage temperature range | Tstg | -40 to +125 | C | |
| Soldering temperature | (1) | Tsld | 260 | C |
| Comparative tracking index | CTI | 175 | ||
| Maximum rated withstanding isolation voltage | t = 1 min | VISO | 3750 | VRMS |
| Maximum transient isolation voltage | VIOTM | 6000 | V | |
| Maximum repetitive peak isolation voltage | VIORM | 707 | V | |
| Apparent charge test voltage (method A) | VIORM x 1.6 = VPR, type and sample test, tm = 60 s, partial discharge < 5 pC | VPR | 1132 | Vpeak |
| Apparent Charge Test Voltage (method B) | VIORM x 1.875 = VPR, 100 % production test with tm = 1 s, partial discharge < 5 pC | VPR | 1326 | Vpeak |
| Isolation resistance | VIO = 500 VDC, Tamb = 100 C | RIO | 1011 | |
| Isolation resistance (under fault conditions) | VIO = 500 VDC, Tamb = TSI | RIO | 109 | |
| Output safety power | PSO | 350 | mW | |
| Input safety current | ISI | 150 | mA | |
| Input safety temperature | TSI | 175 | C | |
| Creepage distance | 5 | mm | ||
| Clearance distance | 5 | mm | ||
| Insulation thickness, reinforced rated per IEC60950 2.10.5.1 | 0.4 | mm |
2410121924_VISHAY-TCMT1109_C118299.pdf
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