TOSHIBA TLP2270 TP4 E high speed photocoupler with compact SO8L package and dual circuit integration
Key Attributes
Model Number:
TLP2270(TP4,E
Product Custom Attributes
Power Dissipation:
20mW
Output Current:
10mA
Low Level Delay Time:
60ns
High Level Delay Time:
60ns
Reverse Voltage:
5V
Voltage - Forward(Vf):
1.5V
Voltage - Supply:
2.7V~5.5V
Forward Current(If):
6mA
Operating Temperature:
-40℃~+125℃
CMTI(kV/us):
35kV/us
Number Of Channels:
2
Input Threshold Current:
1mA
Isolation Voltage(Vrms):
5kV
Input Type:
DC
Mfr. Part #:
TLP2270(TP4,E
Package:
SMD-8P
Product Description
Product Overview
The Toshiba TLP2270 is a high-speed photocoupler featuring an infrared LED coupled with a photo-diode-transistor chip, housed in a thin SO8L package. It offers a guaranteed isolation voltage of 5000 Vrms, compliant with international safety standards for reinforced insulation. With two circuits in a single package, it reduces mounting area. The TLP2270 operates from 2.7 V to 5.5 V and up to 125 , boasting low supply current (0.8 mA) and low threshold input current (1 mA at 125 ) for energy saving. Its internal Faraday shield provides a high common-mode transient immunity of 20 kV/s, enabling direct microcomputer driving with low input current.
Product Attributes
- Brand: Toshiba
- Product Type: Photocoupler
- Package: SO8L
- Commercial Production Start: 2016-10
- Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
Technical Specifications
| Characteristic | Symbol | Min | Typ. | Max | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 8 | mA | Each channel | ||
| Input forward current derating (pulsed) | IF/Ta | -0.32 | mA/ | (Ta 110 ) | ||
| Peak transient input forward current | IFP | 16 | mA | Each channel, Pulse width (PW) 1 ms, duty = 50 % | ||
| Peak transient input forward current derating | IFP/Ta | -0.64 | mA/ | (Ta 110 ) | ||
| Input power dissipation | PD | 20 | mW | Each channel | ||
| Input power dissipation derating | PD/Ta | -0.8 | mW/ | (Ta 110 ) | ||
| Input reverse voltage | VR | 5 | V | |||
| Output current | IO | 10 | mA | |||
| Output voltage | VO | 6 | V | |||
| Supply voltage | VDD | 6 | V | |||
| Output power dissipation | PO | 40 | mW | |||
| Output power dissipation derating | PO/Ta | -1.6 | mW/ | (Ta 110 ) | ||
| Operating temperature | Topr | -40 | 125 | |||
| Storage temperature | Tstg | -55 | 125 | |||
| Lead soldering temperature | Tsol | 260 | (10 s) | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s, R.H. 60 % | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 1.3 | 6 | mA | Each channel | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | ||
| Supply voltage | VDD | 2.7 | 3.3 / 5.0 | 5.5 | V | |
| Operating temperature | Topr | -40 | 125 | |||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.35 | 1.50 | 1.65 | V | IF = 1.3 mA, Ta = 25 |
| Input forward voltage temperature coefficient | VF/Ta | -1.58 | mV/ | IF = 1.3 mA | ||
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 | ||
| Input capacitance | Ct | 26 | pF | V = 0 V, f = 1 MHz , Ta = 25 | ||
| Low-level output voltage | VOL | 0.0007 | 0.1 | V | VF = 0.8 V, IO = 20 A, VDD = 5 V | |
| High-level output voltage | VOH | 0.1 | 0.35 | V | VF = 0.8 V, IO = 3.2 mA, VDD = 5 V | |
| Low-level supply current | IDDL | 3.05 | mA | IF = 1.3 mA, IO = -20 A, VDD = 3.3 V | ||
| High-level supply current | IDDH | 4.75 | mA | IF = 1.3 mA, IO = -20 A, VDD = 5 V | ||
| Threshold input current (L/H) | IFLH | 0.43 | 0.8 | mA | IF = 1.3 mA, IO = -3.2 mA, VDD = 5 V | |
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 0.8 | pF | V = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1014 | V = 500 V, R.H. 60 % | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 5 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | ||
| Propagation delay time (H/L) | tpHL | 5 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | ||
| Pulse width distortion | |tpHL-tpLH| | 0 | 30 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | |
| Propagation delay skew (device to device) | tpsk | -30 | ns | VIN = 3.3 V, VDD = 3.3 V, RIN = 1.3 k, CIN = 22 pF | ||
| Propagation delay time (L/H) | tpLH | 5 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | ||
| Propagation delay time (H/L) | tpHL | 5 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | ||
| Pulse width distortion | |tpHL-tpLH| | 0 | 30 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | |
| Propagation delay skew (device to device) | tpsk | -30 | ns | VIN = 5 V, VDD = 5 V, RIN = 2.7 k, CIN = 12 pF | ||
| Rise time | tr | 5 | ns | VIN = 0 5 V, RT = 2.7 k, CIN = 12 pF | ||
| Fall time | tf | 5 | ns | VIN = 5 0 V, RT = 2.7 k, CIN = 12 pF | ||
| High-level common-mode transient immunity | CMH | 20 | kV/s | VIN = 3.3 V, 5 V, VDD = 3.3 V, 5 V, VCM = 1000 Vp-p, Ta = 25 | ||
| Low-level common-mode transient immunity | CML | 20 | kV/s | VIN = 3.3 V, 5 V, VDD = 3.3 V, 5 V, VCM = 1000 Vp-p, Ta = 25 | ||
2412091014_TOSHIBA-TLP2270-TP4-E_C5943071.pdf
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