TOSHIBA TLP2368 TPL E photocoupler designed for supply voltages from 2.7 to 5.5 volts in SO6 package

Key Attributes
Model Number: TLP2368(TPL,E
Product Custom Attributes
Power Dissipation:
60mW
Output Current:
25mA
Low Level Delay Time:
60ns
High Level Delay Time:
60ns
Reverse Voltage:
5V
Voltage - Forward(Vf):
1.55V
Voltage - Supply:
2.7V~5.5V
Forward Current(If):
14mA
Operating Temperature:
-40℃~+125℃
CMTI(kV/us):
25kV/us
Number Of Channels:
1
Input Threshold Current:
5mA
Isolation Voltage(Vrms):
3.75kV
Input Type:
DC
Mfr. Part #:
TLP2368(TPL,E
Package:
SOP-5-3.6mm
Product Description

Product Overview

The Toshiba TLP2368 is a photocoupler featuring a high-output GaAAs infrared LED and an integrated high-gain, high-speed photodetector. It is designed for operation at temperatures up to 125C and supply voltages from 2.7 V to 5.5 V, housed in an SO6 package. The device includes an internal Faraday shield for high common-mode transient immunity (20 kV/s). Its inverter logic type with an open collector output makes it suitable for various industrial applications.

Product Attributes

  • Brand: Toshiba
  • Product Name: TLP2368
  • Start of Commercial Production: 2011-05
  • Certifications: UL-approved (UL1577), cUL-approved (CSA), VDE-approved (EN60747-5-5, EN60065 or EN60950-1), CQC-approved (GB4943.1, GB8898)
  • VDE Option: (V4) for VDE approved type

Technical Specifications

Characteristic Symbol Min Typ. Max Unit Note
Features
Data transfer rate 20 MBd (typ.) (NRZ)
Threshold input current 5.0 mA (max)
Supply current 4 mA (max)
Common-mode transient immunity 20 kV/s (min)
Isolation voltage BVS 3750 Vrms (min) (Note 1)
Mechanical Parameters
Creepage distances 5.0 mm
Clearance distances 5.0 mm
Internal isolation thickness 0.4 mm
Absolute Maximum Ratings
Input forward current IF 25 mA
Input forward current (pulsed) IFP 40 mA (Note 1)
Peak transient input forward current IFPT 1 A (Note 2)
Input power dissipation PD 40 mW
Input reverse voltage VR -0.67 V
Output current IO 25 mA
Output voltage VO 6 V
Supply voltage VCC 6 V
Output power dissipation PO 60 mW
Operating temperature Topr -40 125
Storage temperature Tstg -55 125
Lead soldering temperature Tsol 260 (10 s)
Recommended Operating Conditions
Input on-state current IF(ON) 6.3 14 mA (Note 1)
Input off-state voltage VF(OFF) 0 0.8 V (Note 2)
Supply voltage VCC 2.7 3.3/5.0 5.5 V (Note 2)
Operating temperature Topr -40 125
Electrical Characteristics
Input forward voltage VF 1.45 1.55 1.7 V IF = 10 mA, Ta = 25
Input reverse current IR 10 A VR = 5 V, Ta = 25
Input capacitance Ct 60 pF V = 0 V, f = 1 MHz, Ta = 25
High-level output current IOH 50 A VF = 0.8 V, VO = 5.5 V, VCC = 5.5 V
Low-level output voltage VOL 0.2 0.6 V IF = 10 mA, IO = 13 mA (Sinking), VO < 0.6 V
High-level supply current ICCH 1.6 4.0 mA IF = 10 mA
Low-level supply current ICCL 2.0 4.0 mA IF = 0 mA
Threshold input current (H/L) IFHL 1.0 5.0 mA IO = 13 mA (Sinking), VO < 0.6 V
Isolation Characteristics
Total capacitance (input to output) CS 0.8 pF VS = 0 V, f = 1 MHz
Isolation resistance RS 1 1012 1014 VS = 500 V, R.H. 60 %
Isolation voltage BVS 3750 Vrms AC, 60 s
Switching Characteristics
Propagation delay time (H/L) tpHL 60 ns IF = 07.5 mA, RL = 350 , CL = 15 pF
Propagation delay time (L/H) tpLH 60 ns IF = 7.50 mA, RL = 350 , CL = 15 pF
Pulse width distortion 35 ns IF = 7.5 mA, RL = 350 , CL = 15 pF
Propagation delay skew (device to device) tpsk -40 40 ns (Note 1), (Note 2)
Fall time tf 30 ns IF = 0 7.5 mA, RL = 350 , CL = 15 pF
Rise time tr 30 ns IF = 7.5 0 mA, RL = 350 , CL = 15 pF
Common-mode transient immunity at output high CMH 20 25 kV/s VCM = 1000 Vp-p, IF = 0 mA, VCC = 3.3 V / 5 V, Ta = 25
Common-mode transient immunity at output low CML 20 25 kV/s VCM = 1000 Vp-p, IF = 10 mA, VCC = 3.3 V / 5 V, Ta = 25

Applications

  • Factory Automation (FA)
  • Plasma Display Panels (PDPs)
  • Measuring Instruments

Pin Configuration

1: Anode, 3: Cathode, 4: GND, 5: VO (Output), 6: VCC

Truth Table

Input LED Output
H ON L
L OFF H

2410010232_TOSHIBA-TLP2368-TPL-E_C99487.pdf

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