photocoupler Toshiba TLP2301 TPL E featuring GaAAs infrared LED optically coupled to photo IC detector
Key Attributes
Model Number:
TLP2301(TPL,E
Product Custom Attributes
Power Dissipation:
200mW
Output Current:
50mA
Low Level Delay Time:
30us
High Level Delay Time:
30us
Reverse Voltage:
5V
Voltage - Forward(Vf):
1.25V
Current Transfer Ratio:
50%
Voltage - Supply:
-
Forward Current(If):
50mA
Operating Temperature:
-55℃~+125℃
Number Of Channels:
1
Input Threshold Current:
-
Isolation Voltage(Vrms):
3.75kV
Input Type:
DC
Mfr. Part #:
TLP2301(TPL,E
Package:
SOP-4-2.54mm
Product Description
Product Overview
The Toshiba TLP2301 is a high-speed photocoupler featuring a GaAAs infrared LED optically coupled to a photo-IC detector. Housed in an SO6 package, it offers early switching characteristics and supports transmission rates of up to 20 kbps, bridging the gap between general-purpose transistor couplers and 1 Mbps IC couplers. It is suitable for applications in industrial inverters, communications equipment, and home electric appliances.
Product Attributes
- Brand: Toshiba
- Material: GaAAs Infrared LED & Photo IC
- Certifications: UL-approved (UL1577), cUL-approved (CSA), VDE-approved (EN60747-5-5, EN60065 or EN60950-1, EN62368-1 Pending), CQC-approved (GB4943.1, GB8898)
- Start of Commercial Production: 2013-03
- Factory Locations: Japan and Thailand
Technical Specifications
| Characteristic | Symbol | Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Collector-emitter voltage | VCEO | 40 | V | |||
| Current transfer ratio | IC/IF | IF = 1 mA, VCE = 5 V | 50% | % | ||
| Current transfer ratio (Rank GB) | IC/IF | IF = 1 mA, VCE = 5 V | 100% | % | ||
| Isolation voltage | BVS | AC, 60 s, R.H. 60% | 3750 | Vrms | ||
| Propagation delay time (H/L) | tpHL | IF = 1 mA, RL = 10 k, Ta = 25 | 15 | 30 | s | |
| Propagation delay time (L/H) | tpLH | IF = 1 mA, RL = 10 k, Ta = 25 | 8 | 30 | s | |
| Operating temperature | Topr | -55 | 125 | |||
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 50 | mA | |||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 100 | mW | |||
| Junction temperature (LED) | Tj | 135 | ||||
| Collector-emitter voltage | VCEO | 40 | V | |||
| Collector current | IC | 50 | mA | |||
| Collector power dissipation | PC | 150 | mW | |||
| Junction temperature (Detector) | Tj | 135 | ||||
| Storage temperature | Tstg | -55 | 125 | |||
| Lead soldering temperature | Tsol | (10 s) | 260 | |||
| Total power dissipation | PT | 200 | mW | |||
| Electrical Characteristics (LED) | ||||||
| Input forward voltage | VF | IF = 10 mA | 1.1 | 1.25 | 1.4 | V |
| Input reverse current | IR | VR = 5 V | 10 | A | ||
| Input capacitance | Ct | V = 0 V, f = 1 MHz | 30 | pF | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 0.1 mA | 40 | V | ||
| Emitter-collector breakdown voltage | V(BR)ECO | IE = 0.1 mA | 7 | V | ||
| Dark Current | IDARK | VCE = 40 V | 0.01 | 0.08 | A | |
| Collector-emitter capacitance | CCE | V = 0 V, f = 1 MHz | 2 | 50 | pF | |
| Electrical Characteristics (Coupled) | ||||||
| Current transfer ratio | IC/IF | IF = 1 mA, VCE = 5 V | 50% | 600% | % | |
| Current transfer ratio (Rank GB) | IC/IF(sat) | IF = 1 mA, VCE = 5 V | 100% | 600% | % | |
| Collector-emitter saturation voltage | VCE(sat) | IC = 2.4 mA, IF = 8 mA | 0.2 | 0.3 | V | |
| OFF-state collector current | IC(off) | VF = 0.7 V, VCE = 40 V | 0.3 | A | ||
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | VS = 0 V, f = 1 MHz | 0.8 | pF | ||
| Isolation resistance | RS | VS = 500 V, R.H. 60% | 1 1012 | 1014 | ||
| Isolation voltage | BVS | AC, 60 s | 3750 | Vrms | ||
| Mechanical Parameters | ||||||
| Creepage distances | Min | 5.0 | mm | |||
| Clearance | Min | 5.0 | mm | |||
| Internal isolation thickness | Min | 0.4 | mm | |||
2409302137_TOSHIBA-TLP2301-TPL-E_C261927.pdf
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