TOSHIBA TLP5702D4TP E photocoupler designed for MOSFET gate drivers and industrial inverter applications
Key Attributes
Model Number:
TLP5702(D4-TP,E
Product Custom Attributes
Load Voltage:
35V
Output Current:
2.5A
Low Level Delay Time:
200ns
High Level Delay Time:
200ns
Reverse Voltage:
5V
Voltage - Forward(Vf):
1.55V
Voltage - Supply:
15V~30V
Operating Temperature:
-40℃~+110℃
Forward Current(If):
20mA
CMTI(kV/us):
20kV/us
Number Of Channels:
1
Input Threshold Current:
5mA
Isolation Voltage(Vrms):
5kV
Input Type:
DC
Mfr. Part #:
TLP5702(D4-TP,E
Package:
SOP-6
Product Description
Product Overview
The TLP5702 is a GaAAs infrared LED and photo IC photocoupler in a 6-pin SO6L package. It offers high gain, high speed, and guaranteed performance up to 110 . Its compact size and compliance with international safety standards make it ideal for applications requiring a smaller footprint and safety certification, such as induction cooktops, home appliances, industrial inverters, air conditioner inverters, and MOSFET/IGBT gate drivers. The internal noise shield provides excellent common-mode transient immunity (20 kV/s).
Product Attributes
- Brand: Toshiba
- Commercial Production Start: 2014-01
- Certifications: UL-approved (UL1577), cUL-approved (CSA), VDE-approved (EN60747-5-5, EN60065, EN60950-1, EN 62368-1), CQC-approved (GB4943.1, GB8898)
Technical Specifications
| Characteristics | Symbol | Min | Typ. | Max | Unit | Notes |
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 20 | mA | |||
| Input forward current derating | IF/Ta | -1 | mA/ | (Ta 105 ) | ||
| Peak transient input forward current | IFPT | 1 | A | (Note 1) | ||
| Peak transient input forward current derating | IFPT/Ta | -25 | mA/ | (Note 2) | ||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 40 | mW | (Ta 85 ) | ||
| Input power dissipation derating | PD/Ta | -1.0 | mW/ | (Ta 85 ) | ||
| Peak high-level output current | IOPH | -2.5 | A | |||
| Peak low-level output current | IOPL | +2.5 | A | |||
| Output voltage | VO | 35 | V | |||
| Supply voltage | VCC | 35 | V | |||
| Output power dissipation | PO | 160 | mW | (Ta 85 ) | ||
| Output power dissipation derating | PO/Ta | -4.0 | mW/ | |||
| Operating temperature | Topr | -40 | 110 | |||
| Storage temperature | Tstg | -55 | 125 | |||
| Lead soldering temperature | Tsol | 260 | (10 s) | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s, R.H. 60 % (Note 4) | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 6.5 | 10 | mA | (Note 1) | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | (Note 2) | |
| Supply voltage | VCC | 15 | 30 | V | ||
| Peak high-level output current | IOPH | -2.0 | A | (Note 2) | ||
| Peak low-level output current | IOPL | +2.0 | A | (Note 2) | ||
| Operating frequency | f | 50 | kHz | (Note 3) | ||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.45 | 1.55 | 1.70 | V | IF = 10 mA, Ta = 25 (Note 1) |
| Input forward voltage temperature coefficient | VF/Ta | -2.0 | mV/ | IF = 10 mA (Note 1) | ||
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 | ||
| Input capacitance | Ct | 60 | pF | V = 0 V, f = 1 MHz, Ta = 25 | ||
| Peak high-level output current | IOPH | -1.6 | -1.0 | A | IF = 5 mA, VCC = 15 V, V6-5 = -3.5 V | |
| Peak low-level output current | IOPL | 1.6 | 2.0 | A | IF = 5 mA, VCC = 15 V, V6-5 = -7 V | |
| High-level output voltage | VOH | 1.0 | V | IF = 0 mA, VCC = 15 V, V5-4 = 2.5 V | ||
| Low-level output voltage | VOL | -2.0 | V | IF = 0 mA, VCC = 15 V, V5-4 = 7 V | ||
| High-level supply current | ICCH | 11.0 | 13.7 | mA | IF = 5 mA, RL = 200 , VCC1 = +15 V, VEE1 = -15 V | |
| Low-level supply current | ICCL | -14.9 | -12.5 | mA | VF = 0.8 V, RL = 200 , VCC1 = +15 V, VEE1 = -15 V | |
| Threshold input current (L/H) | IFLH | 1.5 | 1.5 | 5 | mA | IF = 5 mA, VO > 2.5 V |
| Threshold input voltage (H/L) | VFHL | 1.0 | 1.0 | V | IF = 5 mA, VO < 2.5 V | |
| Supply voltage UVLO threshold voltage | VCC | 15 | 12.5 | 30 | V | |
| Supply voltage UVLO hysteresis | UVLOHYS | 1.5 | V | |||
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 1.0 | pF | VS = 0 V, f = 1 MHz (Note 1) | ||
| Isolation resistance | RS | 1014 | VS = 500 V, R.H. 60 % (Note 1) | |||
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s (Note 1) | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 200 | ns | (Note 1), (Note 2) | ||
| Propagation delay time (H/L) | tpHL | 200 | ns | (Note 1), (Note 2) | ||
| Rise time | tr | ns | (Note 1) | |||
| Fall time | tf | ns | (Note 1) | |||
| Pulse width distortion | |tpHL-tpLH| | ns | (Note 1), (Note 2) | |||
| Propagation delay skew (device to device) | tpsk | ns | (Note 3) | |||
| Common-mode transient immunity at output high | CMH | 20 | kV/s | (Note 4) | ||
| Common-mode transient immunity at output low | CML | 20 | kV/s | (Note 4) | ||
2411220151_TOSHIBA-TLP5702-D4-TP-E_C2929223.pdf
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