Photocoupler TOSHIBA TLP5774 D4E offering compact size and high gain photodetector for signal isolation
Key Attributes
Model Number:
TLP5774(D4,E
Product Custom Attributes
Data Rate:
-
Operating Temperature:
-40℃~+110℃
Input Threshold Current:
2mA
Propagation Delay(tpd):
150ns;150ns
Isolation Voltage(Vrms):
5kV
Voltage - Supply:
10V~30V
Voltage - Forward(Vf):
1.65V
CMTI(kV/us):
35kV/us
Number Of Channels:
1
Input Type:
DC
Mfr. Part #:
TLP5774(D4,E
Package:
SOIC-6-300mil
Product Description
Product Overview
The TLP5774 is a photocoupler featuring an infrared LED and an integrated high-gain, high-speed photodetector in a compact 6-pin SO6L package. It offers a 50% size reduction compared to 8-pin DIP packages, meeting reinforced insulation class requirements for international safety standards and enabling reduced mounting area. The device boasts an internal Faraday shield for a guaranteed common-mode transient immunity of 35 kV/s. It operates with a low threshold input current, allowing bufferless direct drive from a microcomputer. The TLP5774 also features rail-to-rail output for stable operation and improved switching performance.
Product Attributes
- Brand: Toshiba Electronic Devices & Storage Corporation
- Start of Commercial Production: 2016-02
- Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
- Factory Locations: Japan and Thailand
Technical Specifications
| Characteristic | Symbol | Min | Typ. | Max | Unit | Notes |
| Features | ||||||
| Output peak current | 4.0 | A | (max) | |||
| Operating temperature | -40 | 110 | C | |||
| Supply current | 3 | mA | (max) | |||
| Supply voltage | 10 | 30 | V | |||
| Threshold input current | 2 | mA | (max) | |||
| Propagation delay time | 150 | ns | (max) | |||
| Common-mode transient immunity | 35 | kV/s | (min) | |||
| Isolation voltage | 5000 | Vrms | (min) | |||
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 8 | mA | |||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 20 | mW | |||
| Junction temperature (LED) | Tj | 125 | C | |||
| Output voltage | VO | 35 | V | |||
| Supply voltage | VCC | 35 | V | |||
| Output power dissipation | PO | 500 | mW | |||
| Junction temperature (Detector) | Tj | 125 | C | |||
| Storage temperature | Tstg | -55 | 125 | C | ||
| Lead soldering temperature | Tsol | 260 | C | (10 s) | ||
| Isolation voltage | BVS | 5000 | Vrms | (AC, 60 s, R.H. 60 %) | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 3 | 6 | mA | ||
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | ||
| Supply voltage | VCC | 10 | 30 | V | ||
| Peak high-level output current | IOPH | -4.0 | A | |||
| Peak low-level output current | IOPL | 4.0 | A | |||
| Operating frequency | f | 50 | kHz | |||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.5 | 1.65 | 1.9 | V | IF = 8 mA, Ta = 25 C |
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 C | ||
| Input capacitance | Ct | 60 | pF | V = 0 V, f = 1 MHz, Ta = 25 C | ||
| Peak high-level output current | IOPH | -1.2 | A | IF = 5 mA, VCC = 30 V, V6-5 = -3.5 V | ||
| Peak low-level output current | IOPL | -3.0 | A | IF = 5 mA, VCC = 10 V, V6-5 = -7 V | ||
| High-level output voltage | VOH | 1.2 | V | IF = 0 mA, VCC = 30 V, V5-4 = 2.5 V | ||
| Low-level output voltage | VOL | 0.2 | V | IF = 0 mA, VCC = 10 V, V5-4 = 7 V | ||
| High-level supply current | ICCH | 3 | mA | IF = 2 mA, VCC = 10 V, IO = -100 mA | ||
| Low-level supply current | ICCL | 3 | mA | VF = 0.8 V, VCC = 10 V, IO = 100 mA | ||
| Threshold input current (L/H) | IFLH | 1.8 | mA | IF = 5 mA, VCC = 30 V, VO = Open | ||
| Threshold input voltage (H/L) | VFHL | 1.7 | V | IF = 0 mA, VCC = 30 V, VO = Open | ||
| Supply voltage UVLO threshold voltage | VCC | 8.6 | 9.5 | V | IF = 5 mA, VO > 2.5 V | |
| Supply voltage UVLO hysteresis | UVLOHYS | 0.3 | V | IF = 5 mA, VO < 2.5 V | ||
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 1.0 | pF | VS = 0 V, f = 1 MHz | ||
| Isolation resistance | RS | 1012 | 1014 | VS = 500 V, R.H. 60 % | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 150 | ns | (max) | ||
| Propagation delay time (H/L) | tpHL | 150 | ns | (max) | ||
| Rise time | tr | ns | ||||
| Fall time | tf | ns | ||||
| Pulse width distortion | ns | |||||
| Propagation delay skew (device to device) | tpsk | ns | ||||
| High-level common-mode transient immunity | CMH | 35 | kV/s | (min) | ||
| Low-level common-mode transient immunity | CML | 35 | kV/s | (min) | ||
2412091034_TOSHIBA-TLP5774-D4-E_C17537689.pdf
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