High gain photocoupler TOSHIBA TLP5752 D4 E with rail to rail output and reduced mounting area design

Key Attributes
Model Number: TLP5752(D4,E
Product Custom Attributes
Operating Temperature:
-40℃~+110℃
Propagation Delay(tpd):
150ns;150ns
Input Threshold Current:
4mA
Isolation Voltage(Vrms):
5kV
Voltage - Supply:
15V~30V
Voltage - Forward(Vf):
1.55V
CMTI(kV/us):
35kV/us
Number Of Channels:
1
Input Type:
DC
Mfr. Part #:
TLP5752(D4,E
Package:
SOIC-6-300mil
Product Description

Product Overview

The TLP5752 is a photocoupler featuring an infrared LED and an integrated high-gain, high-speed photodetector, housed in a compact 6-pin SO6L package. It is 50% smaller than 8-pin DIP packages and meets reinforced insulation class requirements for international safety standards, enabling reduced mounting area in certified equipment. The device includes an internal Faraday shield for a guaranteed common-mode transient immunity of 35 kV/s. Its rail-to-rail output ensures stable operation and improved switching performance.

Product Attributes

  • Brand: Toshiba
  • Product Name: TLP5752
  • Start of Commercial Production: 2014-06
  • Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
  • VDE Option: (D4) for VDE approved type

Technical Specifications

CharacteristicSymbolMinTyp.MaxUnitNotes
Features
Buffer logic type(totem pole output)
Output peak current2.5A(max)
Operating temperatureTopr-40110
Supply current3.0mA(max)
Supply voltageVCC1530V
Threshold input current4mA(max)
Propagation delay time (tpHL/tpLH)150ns(max)
Common-mode transient immunityCMH/CML35kV/s(min)
Isolation voltageBVS5000Vrms(min)
Absolute Maximum Ratings
Input forward currentIF20mA
Peak transient input forward currentIFPT1A(Note 1)
Input reverse voltageVR5V
Input power dissipationPD40mW(Ta 85 )
Junction temperatureTj125
Peak high-level output currentIOPH-2.5A
Peak low-level output currentIOPL+2.5A
Output voltageVO35V
Supply voltageVCC35V
Output power dissipationPO450mW(Ta 85 )
Junction temperatureTj125
Storage temperatureTstg-55125
Lead soldering temperatureTsol260(10 s)
Isolation voltageBVS5000Vrms(Note 4)
Recommended Operating Conditions
Input on-state currentIF(ON)615mA(Note 1)
Input off-state voltageVF(OFF)00.8V(Note 2)
Supply voltageVCC1530V
Peak high-level output currentIOPH-2.5A
Peak low-level output currentIOPL+2.5A
Operating frequencyf50kHz(Note 3)
Electrical Characteristics
Input forward voltageVF1.451.551.70V(IF = 10 mA, Ta = 25 )
Input reverse currentIR10A(VR = 5 V, Ta = 25 )
Peak high-level output currentIOPH-1.2A(IF = 5 mA, VCC = 30 V)
Peak low-level output currentIOPL+2.5A(IF = 5 mA, VCC = 15 V)
High-level output voltageVOH0.2V(IF = 0 mA, VCC = 30 V)
Low-level output voltageVOL3.0V(IF = 0 mA, VCC = 15 V)
High-level supply currentICCH14.9mA(IF = 10 mA, VCC = 30 V)
Low-level supply currentICCL0.07mA(IF = 0 mA, VCC = 30 V)
Threshold input current (L/H)IFLH1.83.0mA(VCC = 15 V)
Threshold input voltage (H/L)VFHL1.41.7V(VCC = 15 V)
Supply voltage UVLO threshold voltage (positive)VUVLO+12.713.5V(IF = 5 mA)
Supply voltage UVLO threshold voltage (negative)VUVLO-11.712.4V(IF = 5 mA)
Isolation Characteristics
Total capacitance (input to output)CS1.0pF(VS = 0 V, f = 1 MHz)
Isolation resistanceRS10121014(VS = 500 V, R.H. 60 %)
Isolation voltageBVS5000Vrms(AC, 60 s)
Switching Characteristics
Propagation delay time (L/H)tpLH150ns(Note 1)
Propagation delay time (H/L)tpHL150ns(Note 1)
Rise timetrns(Note 1)
Fall timetfns(Note 1)
Pulse width distortionns(Note 1), (Note 2)
Propagation delay skew (device to device)tpskns(Note 3)
High-level common-mode transient immunityCMH35kV/s(Note 4)
Low-level common-mode transient immunityCML35kV/s(Note 4)

2412091032_TOSHIBA-TLP5752-D4-E_C17565675.pdf

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