TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching
Key Attributes
Model Number:
TLP5751(E
Product Custom Attributes
Operating Temperature:
-40℃~+110℃
Isolation Voltage(Vrms):
5kV
Voltage - Supply:
1.55V
Number Of Channels:
1
Mfr. Part #:
TLP5751(E
Package:
SOIC-6-300mil
Product Description
Product Overview
The TLP5751 is a photocoupler featuring an infrared LED and an integrated high-gain, high-speed photodetector housed in a compact 6-pin SO6L package. It offers significant size reduction compared to 8-pin DIP packages while meeting reinforced insulation class requirements for international safety standards, enabling smaller equipment designs. The device includes an internal Faraday shield for a guaranteed common-mode transient immunity of 35 kV/s and provides rail-to-rail output for stable operation and improved switching performance.
Product Attributes
- Brand: Toshiba Electronic Devices & Storage Corporation
- Start of Commercial Production: 2014-06
- Certifications: UL-recognized (UL 1577, File No.E67349), cUL-recognized (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
- Packaging Options: TLP5751 (11-4N1A), TLP5751(LF4) (11-4N101A)
- VDE Option: (D4)
Technical Specifications
| Characteristics | Symbol | Rating/Min | Unit | Note |
| Features | ||||
| Buffer logic type | Totem pole output | |||
| Output peak current | 1.0 | A (max) | ||
| Operating temperature | Topr | -40 to 110 | ||
| Supply current | 3.0 | mA (max) | ||
| Supply voltage | VCC | 15 to 30 | V | |
| Threshold input current | 4 | mA (max) | ||
| Propagation delay time | 150 | ns (max) | ||
| Common-mode transient immunity | 35 | kV/s (min) | ||
| Isolation voltage | BVS | 5000 | Vrms (min) | |
| Mechanical Parameters | ||||
| Height | 2.3 | (max) mm | ||
| Creepage distances | 8.0 | (min) mm | ||
| Clearance distances | 8.0 | (min) mm | ||
| Internal isolation thickness | 0.4 | (min) mm | ||
| Size | ||||
| Absolute Maximum Ratings | ||||
| Input forward current | IF | 20 | mA | (Ta 105 ) |
| Peak transient input forward current | IFPT | 1 | A | Pulse width (PW) 1 s, 300 pps |
| Input reverse voltage | VR | 5 | V | |
| Input power dissipation | PD | 40 | mW | (Ta 85 ) |
| Junction temperature | Tj | 125 | ||
| Peak high-level output current | IOPH | -1.0 | A | (Ta = -40 to 110 ) |
| Peak low-level output current | IOPL | +1.0 | A | (Ta = -40 to 110 ) |
| Output voltage | VO | 35 | V | |
| Supply voltage | VCC | 35 | V | |
| Output power dissipation | PO | 450 | mW | (Ta 85 ) |
| Junction temperature | Tj | 125 | ||
| Storage temperature | Tstg | -55 to 125 | ||
| Lead soldering temperature | Tsol | 260 | (10 s) | |
| Recommended Operating Conditions | ||||
| Input on-state current | IF(ON) | 6 to 15 | mA | |
| Input off-state voltage | VF(OFF) | 0 to 0.8 | V | |
| Supply voltage | VCC | 15 to 30 | V | |
| Peak high-level output current | IOPH | -1.0 | A | |
| Peak low-level output current | IOPL | +1.0 | A | |
| Operating frequency | f | 50 | kHz | |
| Electrical Characteristics | ||||
| Input forward voltage | VF | 1.45 to 1.70 | V | IF = 10 mA, Ta = 25 |
| Input reverse current | IR | 10 | A | VR = 5 V, Ta = 25 |
| Input capacitance | Ct | 60 | pF | V = 0 V, f = 1 MHz, Ta = 25 |
| Peak high-level output current | IOPH | -0.5 | A | IF = 5 mA, VCC = 30 V, V6-5 = -3.5 V |
| Peak low-level output current | IOPL | -1.0 | A | IF = 5 mA, VCC = 15 V, V6-5 = -7 V |
| High-level output voltage | VOH | 0.5 | V | IF = 0 mA, VCC = 30 V, VO = Open |
| Low-level output voltage | VOL | 1.0 | V | IF = 0 mA, VCC = 15 V, VO = Open |
| High-level supply current | ICCH | 14.7 | mA | IF = 4 mA, VCC = 15 V, IO = -100 mA |
| Low-level supply current | ICCL | 0.07 | mA | VF = 0.8 V, VCC = 15 V, IO = 100 mA |
| Threshold input current (L/H) | IFLH | 4 | A | IF = 10 mA, VCC = 30 V, VO = Open |
| Threshold input voltage (H/L) | VFHL | 0.8 | V | IF = 0 mA, VCC = 30 V, VO = Open |
| Supply voltage UVLO threshold voltage | VUVLO+ | 15 | V | VCC = 15 V, VO > 1 V |
| Supply voltage UVLO hysteresis | UVLOHYS | 1.0 | V | IF = 5 mA, VO > 2.5 V |
| Isolation Characteristics | ||||
| Total capacitance (input to output) | CS | 1.0 | pF | VS = 0 V, f = 1 MHz |
| Isolation resistance | RS | 1012 | VS = 500 V, R.H. 60 % | |
| Isolation voltage | BVS | 5000 | Vrms | AC, 60 s |
| Switching Characteristics | ||||
| Propagation delay time (L/H) | tpLH | 150 | ns (max) | |
| Propagation delay time (H/L) | tpHL | 150 | ns (max) | |
| Rise time | tr | |||
| Fall time | tf | |||
| Pulse width distortion | ||||
| Propagation delay skew (device to device) | tpsk | |||
| High-level common-mode transient immunity | CMH | 35 | kV/s (min) | |
| Low-level common-mode transient immunity | CML | 35 | kV/s (min) | |
2410010102_TOSHIBA-TLP5751-E_C17566590.pdf
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