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quality TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching factory
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quality TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching factory
quality TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching factory
quality TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching factory
>

TOSHIBA TLP5751E photocoupler featuring infrared LED and high gain photodetector for stable switching

Specifications
Operating Temperature:
-40℃~+110℃
Isolation voltage(Vrms):
5kV
Voltage - Supply:
1.55V
Number of Channels:
1
Mfr. Part #:
TLP5751(E
Package:
SOIC-6-300mil
Key Attributes
Model Number: TLP5751(E
Product Description

Product Overview

The TLP5751 is a photocoupler featuring an infrared LED and an integrated high-gain, high-speed photodetector housed in a compact 6-pin SO6L package. It offers significant size reduction compared to 8-pin DIP packages while meeting reinforced insulation class requirements for international safety standards, enabling smaller equipment designs. The device includes an internal Faraday shield for a guaranteed common-mode transient immunity of 35 kV/s and provides rail-to-rail output for stable operation and improved switching performance.

Product Attributes

  • Brand: Toshiba Electronic Devices & Storage Corporation
  • Start of Commercial Production: 2014-06
  • Certifications: UL-recognized (UL 1577, File No.E67349), cUL-recognized (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)
  • Packaging Options: TLP5751 (11-4N1A), TLP5751(LF4) (11-4N101A)
  • VDE Option: (D4)

Technical Specifications

CharacteristicsSymbolRating/MinUnitNote
Features
Buffer logic typeTotem pole output
Output peak current 1.0A (max)
Operating temperatureTopr-40 to 110
Supply current3.0mA (max)
Supply voltageVCC15 to 30V
Threshold input current4mA (max)
Propagation delay time150ns (max)
Common-mode transient immunity35kV/s (min)
Isolation voltageBVS5000Vrms (min)
Mechanical Parameters
Height2.3(max) mm
Creepage distances8.0(min) mm
Clearance distances8.0(min) mm
Internal isolation thickness0.4(min) mm
Size
Absolute Maximum Ratings
Input forward currentIF20mA(Ta 105 )
Peak transient input forward currentIFPT1APulse width (PW) 1 s, 300 pps
Input reverse voltageVR5V
Input power dissipationPD40mW(Ta 85 )
Junction temperatureTj125
Peak high-level output currentIOPH-1.0A(Ta = -40 to 110 )
Peak low-level output currentIOPL+1.0A(Ta = -40 to 110 )
Output voltageVO35V
Supply voltageVCC35V
Output power dissipationPO450mW(Ta 85 )
Junction temperatureTj125
Storage temperatureTstg-55 to 125
Lead soldering temperatureTsol260(10 s)
Recommended Operating Conditions
Input on-state currentIF(ON)6 to 15mA
Input off-state voltageVF(OFF)0 to 0.8V
Supply voltageVCC15 to 30V
Peak high-level output currentIOPH-1.0A
Peak low-level output currentIOPL+1.0A
Operating frequencyf50kHz
Electrical Characteristics
Input forward voltageVF1.45 to 1.70VIF = 10 mA, Ta = 25
Input reverse currentIR10AVR = 5 V, Ta = 25
Input capacitanceCt60pFV = 0 V, f = 1 MHz, Ta = 25
Peak high-level output currentIOPH-0.5AIF = 5 mA, VCC = 30 V, V6-5 = -3.5 V
Peak low-level output currentIOPL-1.0AIF = 5 mA, VCC = 15 V, V6-5 = -7 V
High-level output voltageVOH0.5VIF = 0 mA, VCC = 30 V, VO = Open
Low-level output voltageVOL1.0VIF = 0 mA, VCC = 15 V, VO = Open
High-level supply currentICCH14.7mAIF = 4 mA, VCC = 15 V, IO = -100 mA
Low-level supply currentICCL0.07mAVF = 0.8 V, VCC = 15 V, IO = 100 mA
Threshold input current (L/H)IFLH4AIF = 10 mA, VCC = 30 V, VO = Open
Threshold input voltage (H/L)VFHL0.8VIF = 0 mA, VCC = 30 V, VO = Open
Supply voltage UVLO threshold voltageVUVLO+15VVCC = 15 V, VO > 1 V
Supply voltage UVLO hysteresisUVLOHYS1.0VIF = 5 mA, VO > 2.5 V
Isolation Characteristics
Total capacitance (input to output)CS1.0pFVS = 0 V, f = 1 MHz
Isolation resistanceRS1012VS = 500 V, R.H. 60 %
Isolation voltageBVS5000VrmsAC, 60 s
Switching Characteristics
Propagation delay time (L/H)tpLH150ns (max)
Propagation delay time (H/L)tpHL150ns (max)
Rise timetr
Fall timetf
Pulse width distortion
Propagation delay skew (device to device)tpsk
High-level common-mode transient immunityCMH35kV/s (min)
Low-level common-mode transient immunityCML35kV/s (min)

2410010102_TOSHIBA-TLP5751-E_C17566590.pdf

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