TOSHIBA TLP352D4F featuring high gain photodetector and internal Faraday shield for industrial gate control

Key Attributes
Model Number: TLP352(D4,F)
Product Custom Attributes
Output Current:
2.5A
Operating Temperature:
-40℃~+125℃
Input Threshold Current:
5mA
Propagation Delay(tpd):
200ns;200ns
Isolation Voltage(Vrms):
3.75kV
Load Voltage:
35V
Voltage - Supply:
15V~30V
Voltage - Forward(Vf):
1.55V
CMTI(kV/us):
25kV/us
Number Of Channels:
1
Input Type:
DC
Mfr. Part #:
TLP352(D4,F)
Package:
DIP-8
Product Description

Product Overview

The TLP352 is a photocoupler featuring a GaAAs infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC. It offers guaranteed performance up to 125C and includes an internal Faraday shield for 20 kV/s common-mode transient immunity. With a totem-pole output capable of sinking and sourcing current, it is ideal for driving IGBT and power MOSFET gates in industrial applications.

Product Attributes

  • Brand: Toshiba
  • Start of commercial production: 2011-05
  • Certifications: UL-approved (UL1577, File No.E67349), cUL-approved (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN60747-5-5)

Technical Specifications

CharacteristicsSymbolMinTyp.MaxUnitNote
Absolute Maximum Ratings
Input forward currentIF20mA
Input forward current deratingIF/Ta-0.6mA/(Ta 116 )
Peak transient input forward currentIFPT1ANote 1
Peak transient input forward current deratingIFPT/Ta-25mA/Note 2
Input reverse voltageVR5V
Input power dissipationPD40mW
Input power dissipation deratingPD/Ta-1.0mW/(Ta 110 )
Peak high-level output currentIOPH-2.5A
Peak low-level output currentIOPL+2.5A
Output voltageVO35V
Supply voltageVCC35V
Output power dissipationPO260mW
Output power dissipation deratingPO/Ta-6.5mW/(Ta 110 )
Operating temperatureTopr-40to125
Storage temperatureTstg-55to150
Lead soldering temperatureTsol260(10 s)
Isolation voltageBVS3750VrmsAC, 60 s, R.H. 60 %
Recommended Operating Conditions
Input on-state currentIF(ON)6.510mANote 1
Input off-state voltageVF(OFF)00.8VNote 2
Supply voltageVCC1530V
Peak high-level output currentIOPH-2.0ANote 3
Peak low-level output currentIOPL+2.0ANote 3
Operating frequencyf50kHz
Electrical Characteristics
Input forward voltageVF1.41.551.7VIF = 10 mA, Ta = 25
Input forward voltage temperature coefficientVF/Ta-2.0mV/IF = 10 mA
Input reverse currentIR10AVR = 5 V, Ta = 25
Input capacitanceCt95pFV = 0 V, f = 1 MHz, Ta = 25
Peak high-level output currentIOPH-1.6-1.0AIF = 5 mA, VCC = 30 V, V8-6 = -3.5 V
Peak low-level output currentIOPL-2.0AIF = 5 mA, VCC = 15 V, V8-6 = -7.0 V
High-level output voltageVOH1.01.6VIF = 0 mA, VCC = 30 V, V6-5 = 2.5 V
Low-level output voltageVOL2.0VIF = 0 mA, VCC = 15 V, V6-5 = 7.0 V
High-level supply currentICCH11.013.7mAIF = 5 mA, RL = 200 , VCC1 = +15 V, VEE1 = -15 V
Low-level supply currentICCL-14.9-12.5mAVF = 0.8 V, RL = 200 , VCC1 = +15 V, VEE1 = -15 V
Threshold input current (L/H)IFLH1.51.55mAIF = 10 mA, VCC = 30 V, VO = Open
Threshold input voltage (H/L)VFHL1.0VIF = 0 mA, VCC = 30 V, VO = Open
Supply voltage UVLO threshold voltageVCC1530V
UVLO hysteresisUVLOHYS1.5V
Isolation Characteristics
Total capacitance (input to output)CS1.0pFVS = 0 V, f = 1 MHz
Isolation resistanceRS1 10121014VS = 500 V, R.H. 60 %
Isolation voltageBVS3750VrmsAC, 60 s
Switching Characteristics
Propagation delay time (L/H)tpLH200nsNote 1
Propagation delay time (H/L)tpHL200nsNote 1
Rise timetrnsNote 1
Fall timetfnsNote 1
Pulse width distortion|tpHL-tpLH|ns
Propagation delay skew (device to device)tpskns
Common-mode transient immunity at output highCMH20kV/s
Common-mode transient immunity at output lowCML20kV/s

2410010232_TOSHIBA-TLP352-D4-F_C17690669.pdf

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