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quality TOSHIBA TLP352D4F featuring high gain photodetector and internal Faraday shield for industrial gate control factory
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quality TOSHIBA TLP352D4F featuring high gain photodetector and internal Faraday shield for industrial gate control factory
quality TOSHIBA TLP352D4F featuring high gain photodetector and internal Faraday shield for industrial gate control factory
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TOSHIBA TLP352D4F featuring high gain photodetector and internal Faraday shield for industrial gate control

Specifications
Output Current:
2.5A
Operating Temperature:
-40℃~+125℃
Input threshold current:
5mA
Propagation Delay(tpd):
200ns;200ns
Isolation voltage(Vrms):
3.75kV
Load Voltage:
35V
Voltage - Supply:
15V~30V
Voltage - Forward(Vf):
1.55V
CMTI(kV/us):
25kV/us
Number of Channels:
1
Input Type:
DC
Mfr. Part #:
TLP352(D4,F)
Package:
DIP-8
Key Attributes
Model Number: TLP352(D4,F)
Product Description

Product Overview

The TLP352 is a photocoupler featuring a GaAAs infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC. It offers guaranteed performance up to 125C and includes an internal Faraday shield for 20 kV/s common-mode transient immunity. With a totem-pole output capable of sinking and sourcing current, it is ideal for driving IGBT and power MOSFET gates in industrial applications.

Product Attributes

  • Brand: Toshiba
  • Start of commercial production: 2011-05
  • Certifications: UL-approved (UL1577, File No.E67349), cUL-approved (CSA Component Acceptance Service No.5A File No.E67349), VDE-approved (EN60747-5-5)

Technical Specifications

CharacteristicsSymbolMinTyp.MaxUnitNote
Absolute Maximum Ratings
Input forward currentIF20mA
Input forward current deratingIF/Ta-0.6mA/(Ta 116 )
Peak transient input forward currentIFPT1ANote 1
Peak transient input forward current deratingIFPT/Ta-25mA/Note 2
Input reverse voltageVR5V
Input power dissipationPD40mW
Input power dissipation deratingPD/Ta-1.0mW/(Ta 110 )
Peak high-level output currentIOPH-2.5A
Peak low-level output currentIOPL+2.5A
Output voltageVO35V
Supply voltageVCC35V
Output power dissipationPO260mW
Output power dissipation deratingPO/Ta-6.5mW/(Ta 110 )
Operating temperatureTopr-40to125
Storage temperatureTstg-55to150
Lead soldering temperatureTsol260(10 s)
Isolation voltageBVS3750VrmsAC, 60 s, R.H. 60 %
Recommended Operating Conditions
Input on-state currentIF(ON)6.510mANote 1
Input off-state voltageVF(OFF)00.8VNote 2
Supply voltageVCC1530V
Peak high-level output currentIOPH-2.0ANote 3
Peak low-level output currentIOPL+2.0ANote 3
Operating frequencyf50kHz
Electrical Characteristics
Input forward voltageVF1.41.551.7VIF = 10 mA, Ta = 25
Input forward voltage temperature coefficientVF/Ta-2.0mV/IF = 10 mA
Input reverse currentIR10AVR = 5 V, Ta = 25
Input capacitanceCt95pFV = 0 V, f = 1 MHz, Ta = 25
Peak high-level output currentIOPH-1.6-1.0AIF = 5 mA, VCC = 30 V, V8-6 = -3.5 V
Peak low-level output currentIOPL-2.0AIF = 5 mA, VCC = 15 V, V8-6 = -7.0 V
High-level output voltageVOH1.01.6VIF = 0 mA, VCC = 30 V, V6-5 = 2.5 V
Low-level output voltageVOL2.0VIF = 0 mA, VCC = 15 V, V6-5 = 7.0 V
High-level supply currentICCH11.013.7mAIF = 5 mA, RL = 200 , VCC1 = +15 V, VEE1 = -15 V
Low-level supply currentICCL-14.9-12.5mAVF = 0.8 V, RL = 200 , VCC1 = +15 V, VEE1 = -15 V
Threshold input current (L/H)IFLH1.51.55mAIF = 10 mA, VCC = 30 V, VO = Open
Threshold input voltage (H/L)VFHL1.0VIF = 0 mA, VCC = 30 V, VO = Open
Supply voltage UVLO threshold voltageVCC1530V
UVLO hysteresisUVLOHYS1.5V
Isolation Characteristics
Total capacitance (input to output)CS1.0pFVS = 0 V, f = 1 MHz
Isolation resistanceRS1 10121014VS = 500 V, R.H. 60 %
Isolation voltageBVS3750VrmsAC, 60 s
Switching Characteristics
Propagation delay time (L/H)tpLH200nsNote 1
Propagation delay time (H/L)tpHL200nsNote 1
Rise timetrnsNote 1
Fall timetfnsNote 1
Pulse width distortion|tpHL-tpLH|ns
Propagation delay skew (device to device)tpskns
Common-mode transient immunity at output highCMH20kV/s
Common-mode transient immunity at output lowCML20kV/s

2410010232_TOSHIBA-TLP352-D4-F_C17690669.pdf

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