High speed photocoupler TOSHIBA TLP5771 D4 TP E with GaAAs infrared LED and integrated photodetector
Key Attributes
Model Number:
TLP5771(D4-TP,E
Product Custom Attributes
Output Current:
1A
Data Rate:
-
Operating Temperature:
-40℃~+110℃
Propagation Delay(tpd):
150ns;150ns
Input Threshold Current:
2mA
Isolation Voltage(Vrms):
5kV
Load Voltage:
35V
Voltage - Supply:
10V~30V
Voltage - Forward(Vf):
1.65V
CMTI(kV/us):
35kV/us
Number Of Channels:
1
Input Type:
DC
Mfr. Part #:
TLP5771(D4-TP,E
Package:
SO-6
Product Description
Product Overview
The TLP5771 is a photocoupler featuring a GaAAs infrared LED and an integrated high-gain, high-speed photodetector, housed in a compact 6-pin SO6L package. It offers a 50% size reduction compared to 8-pin DIP packages and meets reinforced insulation class requirements for international safety standards, enabling reduced mounting area in certified equipment. The device includes an internal Faraday shield for guaranteed common-mode transient immunity of 35 kV/s and operates with a low threshold input current, allowing direct drive from a microcomputer without buffers. Its rail-to-rail output ensures stable operation and improved switching performance.
Product Attributes
- Brand: Toshiba Electronic Devices & Storage Corporation
- Start of Commercial Production: 2016-02
- Certifications: UL-approved (UL1577), cUL-approved (CSA Component Acceptance Service), VDE-approved (EN60747-5-5, EN60065 or EN60950-1, EN62368-1 Pending), CQC-approved (GB4943.1, GB8898)
- Option for VDE approved type: (D4)
Technical Specifications
| Characteristic | Symbol | Min | Typ. | Max | Unit | Note |
|---|---|---|---|---|---|---|
| Features | ||||||
| Buffer logic type | (1) Totem pole output | |||||
| Output peak current | 1.0 | A | (2) | |||
| Operating temperature | Topr | -40 | 110 | (3) | ||
| Supply current | 3 | mA | (4) | |||
| Supply voltage | VCC | 10 | 30 | V | (5) | |
| Threshold input current | 2 | mA | (6) | |||
| Propagation delay time | 150 | ns | (7) | |||
| Common-mode transient immunity | 35 | kV/s | (8) | |||
| Isolation voltage | BVS | 5000 | Vrms | (9) | ||
| Mechanical Parameters | ||||||
| Height | 2.3 | mm (max) | ||||
| Creepage distances | 8.0 | mm (min) | ||||
| Clearance distances | 8.0 | mm (min) | ||||
| Internal isolation thickness | 0.4 | mm (min) | ||||
| Size | ||||||
| Absolute Maximum Ratings | ||||||
| Input forward current | IF | 8 | mA | (Ta 105 ) | ||
| Input forward current derating | IF/Ta | -0.4 | mA/ | (Ta 105 ) | ||
| Peak transient input forward current | IFPT | 1 | A | (PW 1 s, 300 pps) | ||
| Input reverse voltage | VR | 5 | V | |||
| Input power dissipation | PD | 20 | mW | (Ta 85 ) | ||
| Input power dissipation derating | PD/Ta | -0.5 | mW/ | (Ta 85 ) | ||
| Peak high-level output current | IOPH | -1.0 | A | (Ta 85 ) | ||
| Peak low-level output current | IOPL | +1.0 | A | (Ta 85 ) | ||
| Output voltage | VO | 35 | V | |||
| Supply voltage | VCC | 35 | V | |||
| Output power dissipation | PO | 500 | mW | (Ta 85 ) | ||
| Output power dissipation derating | PO/Ta | -12.5 | mW/ | (Ta 85 ) | ||
| Operating temperature | Topr | -40 | 110 | |||
| Storage temperature | Tstg | -55 | 125 | |||
| Lead soldering temperature | Tsol | 260 | (10 s) | |||
| Isolation voltage | BVS | 5000 | Vrms | (AC, 60 s, R.H. 60 %) | ||
| Recommended Operating Conditions | ||||||
| Input on-state current | IF(ON) | 3 | 6 | mA | (Note 1) | |
| Input off-state voltage | VF(OFF) | 0 | 0.8 | V | (Note 2) | |
| Supply voltage | VCC | 10 | 30 | V | ||
| Peak high-level output current | IOPH | -1.0 | A | (Note 3) | ||
| Peak low-level output current | IOPL | +1.0 | A | (Note 3) | ||
| Operating frequency | f | 50 | kHz | |||
| Electrical Characteristics | ||||||
| Input forward voltage | VF | 1.5 | 1.65 | 1.9 | V | (IF = 8 mA, Ta = 25 ) |
| Input forward voltage temperature coefficient | VF/Ta | -1.8 | mV/ | (IF = 8 mA) | ||
| Input reverse current | IR | 10 | A | (VR = 5 V, Ta = 25 ) | ||
| Input capacitance | Ct | 60 | pF | (V = 0 V, f = 1 MHz, Ta = 25 ) | ||
| Peak high-level output current | IOPH | -0.5 | A | (IF = 5 mA, VCC = 30 V, V6-5 = -3.5 V, Note 1) | ||
| Peak low-level output current | IOPL | +1.0 | A | (IF = 5 mA, VCC = 10 V, V6-5 = -7 V, Note 1) | ||
| High-level output voltage | VOH | 0.5 | V | (IF = 0 mA, VCC = 30 V, V5-4 = 2.5 V) | ||
| Low-level output voltage | VOL | 1.0 | V | (IF = 0 mA, VCC = 10 V, V5-4 = 7 V) | ||
| High-level supply current | ICCH | 0.2 | mA | (IF = 2 mA, VCC = 10 V, IO = -100 mA) | ||
| Low-level supply current | ICCL | 3 | mA | (VF = 0.8 V, VCC = 10 V, IO = 100 mA) | ||
| Threshold input current (L/H) | IFLH | 2 | mA | (IF = 5 mA, VCC = 30 V, VO = Open) | ||
| Threshold input voltage (H/L) | VFHL | 3 | V | (IF = 0 mA, VCC = 30 V, VO = Open) | ||
| Supply voltage UVLO threshold voltage | VCC | 30 | V | (IF = 5 mA, VO > 2.5 V) | ||
| Supply voltage UVLO threshold voltage | VCC | 30 | V | (IF = 5 mA, VO < 2.5 V) | ||
| Supply voltage UVLO hysteresis | UVLOHYS | 7.5 | 8.6 | 9.5 | V | |
| Isolation Characteristics | ||||||
| Total capacitance (input to output) | CS | 1.0 | pF | (VS = 0 V, f = 1 MHz) | ||
| Isolation resistance | RS | 1 1012 | 1014 | (VS = 500 V, R.H. 60 %) | ||
| Isolation voltage | BVS | 5000 | Vrms | (AC, 60 s) | ||
| Switching Characteristics | ||||||
| Propagation delay time (L/H) | tpLH | 150 | ns | (Note 1) | ||
| Propagation delay time (H/L) | tpHL | 150 | ns | (Note 1) | ||
| Rise time | tr | ns | (Note 1) | |||
| Fall time | tf | ns | (Note 1) | |||
| Pulse width distortion | ns | (Note 1), (Note 2) | ||||
| Propagation delay skew (device to device) | tpsk | ns | (Note 3) | |||
| Common-mode transient immunity at output high | CMH | kV/s | (Note 4) | |||
| Common-mode transient immunity at output low | CML | kV/s | (Note 4) | |||
2412091033_TOSHIBA-TLP5771-D4-TP-E_C17694903.pdf
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