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quality industrial photocoupler TOSHIBA TLP5701B D4CNTPE with infrared LED and integrated photodetector IC factory
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quality industrial photocoupler TOSHIBA TLP5701B D4CNTPE with infrared LED and integrated photodetector IC factory
quality industrial photocoupler TOSHIBA TLP5701B D4CNTPE with infrared LED and integrated photodetector IC factory
quality industrial photocoupler TOSHIBA TLP5701B D4CNTPE with infrared LED and integrated photodetector IC factory
>

industrial photocoupler TOSHIBA TLP5701B D4CNTPE with infrared LED and integrated photodetector IC

Specifications
Output Current:
600mA
Operating Temperature:
-40℃~+110℃
Isolation voltage(Vrms):
5kV
Propagation Delay(tpd):
500ns;500ns
Reverse Voltage:
5V
Load Type:
MOSFET;IGBT
Voltage - Supply:
10V~30V
Rise Time:
50ns
Fall Time:
50ns
Voltage - Forward(Vf):
1.57V
CMTI(kV/us):
20kV/us
Number of Channels:
1
Mfr. Part #:
TLP5701B(D4CNTPE
Package:
SMD-6P
Key Attributes
Model Number: TLP5701B(D4CNTPE
Product Description

Product Overview

The TLP5701 is a high-performance photocoupler featuring an infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC. Designed for industrial applications such as inverters, IGBT gate drivers, MOSFET gate drivers, and home appliances, it offers guaranteed performance up to 110C. Its compact SO6L package provides a smaller footprint compared to 8-pin DIP packages while complying with international safety standards for reinforced insulation. With an internal noise shield, it boasts a common-mode transient immunity of 20 kV/s, making it ideal for driving small class IGBT and power MOSFETs.

Product Attributes

  • Brand: Toshiba
  • Origin: Japan and Thailand Factory
  • Certifications: UL-recognized (UL 1577), cUL-recognized (CSA Component Acceptance Service), VDE-approved (EN 60747-5-5, EN 62368-1), CQC-approved (GB4943.1, GB8898)

Technical Specifications

CharacteristicSymbolMinTyp.MaxUnit
Features
Output peak current0.6A
Operating temperatureTopr-40110C
Supply current2.0mA
Supply voltageVCC1030V
Threshold input current5mA
Propagation delay time (tpHL/tpLH)500ns
Common-mode transient immunityCMH/CML20kV/s
Isolation voltageBVS5000Vrms
Electrical Characteristics
Input forward voltageVF1.401.571.80V
Input reverse currentIR10A
Input capacitanceCt60pF
Peak high-level output currentIOPH-0.51-0.2A
Peak low-level output currentIOPL-0.95-0.4A
High-level output voltageVOH0.511.0V
Low-level output voltageVOL0.832.0V
High-level supply currentICCH8.45mA
Low-level supply currentICCL0.32.0mA
Threshold input current (L/H)IFLH1.25mA
Threshold input voltage (H/L)VFHL1.130V
Supply voltage UVLO threshold voltageVCC VUVLO+7.58.79.5V
Supply voltage UVLO hysteresisUVLOHYS0.3V
Isolation Characteristics
Total capacitance (input to output)CS1.0pF
Isolation resistanceRS10121014
Switching Characteristics
Propagation delay time (L/H)tpLH30500ns
Propagation delay time (H/L)tpHL30500ns
Rise timetr50350ns
Fall timetf5080ns
Pulse width distortionns
Propagation delay skew (device to device)tpsk-80ns
High-level common-mode transient immunityCMH2025kV/s
Low-level common-mode transient immunityCML2025kV/s

2504101957_TOSHIBA-TLP5701B-D4CNTPE_C43687168.pdf

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