Optocoupler RENESAS PS2561DL-1Y-V-F3-A Plastic DIP Photocoupler with GaAs LED and Silicon Transistor
Key Attributes
Model Number:
PS2561DL-1Y-V-F3-A
Product Custom Attributes
Rise Time:
3us
Fall Time:
5us
Output Current:
50mA
Vce Saturation(VCE(sat)):
300mV@10mA,2mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
400%;10%
Forward Current(If):
40mA
Pd - Power Dissipation:
-
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2561DL-1Y-V-F3-A
Package:
SMD-4P
Product Description
Product Description
The PS2561D-1 series are optically coupled isolators featuring a GaAs light emitting diode and an NPN silicon phototransistor. Available in a plastic DIP (Dual In-line Package) and lead bending types (Gull-wing) for surface mount, including options for long creepage distance. These photocouplers are designed for high-speed switching and offer excellent isolation and high collector to emitter voltage. They are suitable for applications in power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Not specified
- Origin: Made in Taiwan / Made in Japan
- Material: Plastic DIP, Silicon Phototransistor
- Color: Not specified
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, CQC, VDE (Option)
- Pb-Free Product: Yes
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Reverse Voltage | VR | 6 | V | |||
| Diode Forward Current (DC) | IF | 40 | mA | |||
| Diode Power Dissipation | PD | 150 | mW | |||
| Diode Power Dissipation Derating | PD/C | 1.5 | mW/C | |||
| Diode Peak Forward Current | IFP | *1 PW = 100 s, Duty Cycle = 1 % | 1 | A | ||
| Transistor Collector to Emitter Voltage | VCEO | 80 | V | |||
| Transistor Emitter to Collector Voltage | VECO | 7 | V | |||
| Transistor Collector Current | IC | 50 | mA | |||
| Transistor Power Dissipation | PC | 150 | mW | |||
| Transistor Power Dissipation Derating | PC/C | 1.5 | mW/C | |||
| Isolation Voltage | BV | *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 5000 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | 55 | +110 | C | ||
| Storage Temperature | Tstg | 55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 10 mA | 1.2 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 10 | pF | ||
| Collector to Emitter Dark Current | ICEO | VCE = 48 V, IF = 0 mA | 100 | nA | ||
| Coupled Current Transfer Ratio | CTR | IF = 5 mA, VCE = 5 V | 50 | 160 | 400 | % |
| Coupled Current Transfer Ratio | CTR | IF = 1 mA, VCE = 5 V | 10 | 80 | % | |
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.5 | pF | ||
| Rise Time | tr | *2 VCC = 10 V, IC = 2 mA, RL = 100 | 3 | s | ||
| Fall Time | tf | *2 VCC = 10 V, IC = 2 mA, RL = 100 | 5 | s | ||
2212222008_RENESAS-PS2561DL-1Y-V-F3-A_C5334514.pdf
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