Photocoupler RENESAS PS2562L-1-F3-A featuring GaAs LED and NPN phototransistor for programmable logic controller
Key Attributes
Model Number:
PS2562L-1-F3-A
Product Custom Attributes
Output Current:
200mA
Fall Time:
100us
Rise Time:
100us
Vce Saturation(VCE(sat)):
1V@1mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
40V
Reverse Voltage:
6V
Current Transfer Ratio:
200%;2000%
Forward Current(If):
80mA
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Load Type:
Darlington Transistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2562L-1-F3-A
Package:
SMD-4P
Product Description
Product Description
The PS2562-1 series are optically coupled isolators, each containing a GaAs light emitting diode and an NPN silicon Darlington connected phototransistor. They are available in a plastic DIP (Dual In-line Package) and lead-bending types for surface mounting, including options for long creepage distance. These photocouplers offer high isolation voltage (5000 Vr.m.s.), high current transfer ratio (2000% TYP.), and high-speed switching (100 s TYP.). Applications include power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: NEPOC Series
- Origin: Japan
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, DEMKO, FIMKO, DIN EN60747-5-2 (VDE0884 Part2) (option)
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| Diode Reverse Voltage | VR | 6 | V | |||
| Diode Forward Current (DC) | IF | 80 | mA | |||
| Diode Power Dissipation | PD | 150 | mW | |||
| Transistor Collector to Emitter Voltage | VCEO | 40 | V | |||
| Transistor Collector Current | IC | 200 | mA | |||
| Transistor Power Dissipation | PC | 200 | mW | |||
| Isolation Voltage | BV | AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 5000 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | 55 | +100 | C | ||
| Storage Temperature | Tstg | 55 | +150 | C | ||
| Diode Forward Voltage | VF | IF = 10 mA | 1.17 | 1.4 | V | |
| Diode Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 50 | pF | ||
| Transistor Collector to Emitter Dark Current | ICEO | VCE = 40 V, IF = 0 mA | 400 | nA | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | IF = 1 mA, VCE = 2 VDC | 200 | 2000 | % | |
| Collector Saturation Voltage | VCE (sat) | IF = 1 mA, IC = 2 mA | 1.0 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.5 | pF | ||
| Rise Time | tr | VCC = 10 V, IC = 10 mA, RL = 100 | 100 | s | ||
| Fall Time | tf | VCC = 10 V, IC = 10 mA, RL = 100 | 100 | s |
2311152200_RENESAS-PS2562L-1-F3-A_C17555863.pdf
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