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quality Photocoupler RENESAS PS2562L-1-F3-A featuring GaAs LED and NPN phototransistor for programmable logic controller factory
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quality Photocoupler RENESAS PS2562L-1-F3-A featuring GaAs LED and NPN phototransistor for programmable logic controller factory
>

Photocoupler RENESAS PS2562L-1-F3-A featuring GaAs LED and NPN phototransistor for programmable logic controller

Specifications
Output Current:
200mA
Fall time:
100us
Rise time:
100us
Vce Saturation(VCE(sat)):
1V@1mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
40V
Reverse Voltage:
6V
Current transfer ratio:
200%;2000%
Forward Current(If):
80mA
Pd - Power Dissipation:
200mW
Number of Channels:
-
Load Type:
Darlington Transistor
Input type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2562L-1-F3-A
Package:
SMD-4P
Key Attributes
Model Number: PS2562L-1-F3-A
Product Description

Product Description

The PS2562-1 series are optically coupled isolators, each containing a GaAs light emitting diode and an NPN silicon Darlington connected phototransistor. They are available in a plastic DIP (Dual In-line Package) and lead-bending types for surface mounting, including options for long creepage distance. These photocouplers offer high isolation voltage (5000 Vr.m.s.), high current transfer ratio (2000% TYP.), and high-speed switching (100 s TYP.). Applications include power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.

Product Attributes

  • Brand: NEPOC Series
  • Origin: Japan
  • Certifications: UL, CSA, BSI, SEMKO, NEMKO, DEMKO, FIMKO, DIN EN60747-5-2 (VDE0884 Part2) (option)

Technical Specifications

ParameterSymbolConditionsMIN.TYP.MAX.Unit
Diode Reverse VoltageVR6V
Diode Forward Current (DC)IF80mA
Diode Power DissipationPD150mW
Transistor Collector to Emitter VoltageVCEO40V
Transistor Collector CurrentIC200mA
Transistor Power DissipationPC200mW
Isolation VoltageBVAC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together.5000Vr.m.s.
Operating Ambient TemperatureTA55+100C
Storage TemperatureTstg55+150C
Diode Forward VoltageVFIF = 10 mA1.171.4V
Diode Reverse CurrentIRVR = 5 V5A
Terminal CapacitanceCtV = 0 V, f = 1.0 MHz50pF
Transistor Collector to Emitter Dark CurrentICEOVCE = 40 V, IF = 0 mA400nA
Coupled Current Transfer Ratio (IC/IF)CTRIF = 1 mA, VCE = 2 VDC2002000%
Collector Saturation VoltageVCE (sat)IF = 1 mA, IC = 2 mA1.0V
Isolation ResistanceRI-OVI-O = 1.0 kVDC1011
Isolation CapacitanceCI-OV = 0 V, f = 1.0 MHz0.5pF
Rise TimetrVCC = 10 V, IC = 10 mA, RL = 100 100s
Fall TimetfVCC = 10 V, IC = 10 mA, RL = 100 100s

2311152200_RENESAS-PS2562L-1-F3-A_C17555863.pdf

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