SSOP package photocoupler RENESAS PS2801C-1-V-F3-A with shield to prevent ambient light interference

Name: SSOP package photocoupler RENESAS PS2801C-1-V-F3-A with shield to prevent ambient light interference
Brand: Beijing Silk Road Enterprise Management Services Co., Ltd.
SKU: PS2801C-1-V-F3-A
Availability: InStock

Key Attributes

Model Number: PS2801C-1-V-F3-A

Product Custom Attributes

Rise Time:

5us

Output Current:

30mA

Fall Time:

7us

Vce Saturation(VCE(sat)):

130mV@10mA,2mA

Operating Temperature:

-55℃~+100℃

Load Voltage:

80V

Reverse Voltage:

Load Type:

Phototransistor

Current Transfer Ratio:

400%;50%

Forward Current(If):

30mA

Input Type:

Isolation Voltage(Vrms):

2.5kV

Number Of Channels:

Mfr. Part #:

PS2801C-1-V-F3-A

Package:

SOIC-4-175mil

Product Description

The PS2801C-1 and PS2801C-4 are high isolation voltage SSOP photocouplers designed for high-density applications, offering excellent cost performance. They integrate a GaAs light emitting diode and an NPN silicon phototransistor within a plastic SSOP package that features a shield to block ambient light. These photocouplers are suitable for applications such as programmable logic controllers, measuring instruments, power supplies, and hybrid ICs.

Product Attributes

Brand: Not specified
Origin: Made in Taiwan, Made in Japan
Certifications: UL (UL1577, Single protection), CSA (CAN/CSA-C22.2 No. 62368-1, Basic insulation), BSI (BS EN 62368-1, Basic/Supplementary insulation for PS2801C-1 only), VDE (DIN EN 60747-5-5, Option)
Material: Not specified
Color: Not specified
Pb-Free: Yes

Technical Specifications

Parameter	Symbol	PS2801C-1 Rating	PS2801C-4 Rating	Unit	Conditions	Min.	Typ.	Max.
Diode Characteristics	Forward Current (DC)	30	30	mA/ch
	Reverse Voltage	6	6	V
	Power Dissipation	60	80	mW/ch
	Power Dissipation Derating	0.6	0.8	mW/C
	Peak Forward Current	0.5	0.5	A/ch	PW = 100 s, Duty Cycle = 1%
	Forward Voltage			V	IF = 5 mA	1.2	1.4
	Reverse Current			A	VR = 5 V		5
	Terminal Capacitance	Ct			pF	V = 0 V, f = 1.0 MHz		10
	Diode Power Dissipation vs. Ambient Temperature	PD			mW
	Forward Current vs. Forward Voltage	IF			mA
Transistor Characteristics	Collector to Emitter Voltage	VCEO	80	80	V
	Emitter to Collector Voltage	VECO	5	5	V
	Collector Current	IC	30	30	mA/ch
	Power Dissipation	PC	120	120	mW/ch
	Power Dissipation Derating	PC/C	1.2	1.2	mW/C
	Collector to Emitter Dark Current	ICEO			nA	VCE = 80 V, IF = 0 mA		100
	Collector Saturation Voltage	VCE (sat)			V	IF = 10 mA, IC = 2 mA	0.13	0.3
	Collector Current vs. Collector to Emitter Voltage	IC			mA
	Collector Current vs. Collector Saturation Voltage	IC			mA
	Transistor Power Dissipation vs. Ambient Temperature	PC			mW
	Collector to Emitter Dark Current vs. Ambient Temperature	ICEO			nA
Coupling Characteristics	Current Transfer Ratio	CTR	50	50	%	IF = 5 mA, VCE = 5 V	50	400
	Isolation Resistance	RI-O				VI-O = 1.0 kVDC	10¹¹
	Isolation Capacitance	CI-O			pF	V = 0 V, f = 1.0 MHz		0.4
	Current Transfer Ratio vs. Forward Current	CTR			(%)	VCE = 5 V, n = 3
	Normalized Current Transfer Ratio vs. Ambient Temperature	CTR				Normalized to 1.0 at TA = 25C, IF = 5 mA, VCE = 5 V
Switching Characteristics	Rise Time	tr			s	VCC = 5 V, IC = 2 mA, RL = 100		5
	Fall Time	tf			s			7
	Turn-on Time	ton			s			10
	Turn-off Time	toff			s			7
Isolation Characteristics	Isolation Voltage	BV	2500	2500	Vr.m.s.	AC voltage for 1 minute at TA = 25C, RH = 60%
Isolation Characteristics	Air Distance		4.5	4.5	mm
Creepage Distance		4.5	4.5	mm
Isolation Distance		0.1	0.1	mm
Operating Ambient Temperature	TA			C		-55		+100
Storage Temperature	Tstg			C		-55		+150

2311152351_RENESAS-PS2801C-1-V-F3-A_C17568763.pdf

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