Single transistor photocoupler RENESAS PS2561-1-A designed for operation in telephone and FA OA equipment
Key Attributes
Model Number:
PS2561-1-A
Product Custom Attributes
Rise Time:
3us
Fall Time:
5us
Output Current:
50mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
80%;400%
Forward Current(If):
80mA
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Pd - Power Dissipation:
150mW
Number Of Channels:
1
Mfr. Part #:
PS2561-1-A
Package:
DIP-4
Product Description
Product Overview
The PS2561-1 series are high isolation voltage single transistor type photocouplers. They consist of a GaAs light emitting diode and an NPN silicon phototransistor, offering high speed switching and high current transfer ratio. Available in various package types including DIP, lead bending for surface mount, and wide lead bending for surface mount, these devices are suitable for applications such as power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Not specified
- Origin: Made in Japan / Made in Taiwan
- Material: Not specified
- Color: Not specified
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, VDE (Option)
Technical Specifications
| Model | Package Type | Isolation Voltage (BV) | Collector to Emitter Voltage (VCEO) | Current Transfer Ratio (CTR) TYP. | Switching Time (tr) TYP. | Switching Time (tf) TYP. |
| PS2561-1 | DIP | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| PS2561L-1 | Lead Bending (Gull-wing) | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| PS2561L1-1 | Wide Lead Bending | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| PS2561L2-1 | Wide Lead Bending for Surface Mount | 5000 Vr.m.s. | 80 V | 200% | 3 s | 5 s |
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
| Diode Forward Voltage | VF | IF = 10 mA | 1.17 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 50 | pF | ||
| Collector to Emitter Dark Current | ICEO | VCE = 80 V, IF = 0 mA | 100 | nA | ||
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.5 | pF |
| Parameter | Symbol | Ratings | Unit |
| Diode Reverse Voltage | VR | 6 | V |
| Forward Current (DC) | IF | 80 | mA |
| Power Dissipation (Diode) | PD | 150 | mW |
| Peak Forward Current | IFP | 1 | A |
| Emitter to Collector Voltage | VECO | 7 | V |
| Collector Current | IC | 50 | mA |
| Power Dissipation (Transistor) | PC | 150 | mW |
| Operating Ambient Temperature | TA | 55 to +100 | C |
| Storage Temperature | Tstg | 55 to +150 | C |
2311160346_RENESAS-PS2561-1-A_C17597435.pdf
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
