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quality Single transistor photocoupler RENESAS PS2561-1-A designed for operation in telephone and FA OA equipment factory
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quality Single transistor photocoupler RENESAS PS2561-1-A designed for operation in telephone and FA OA equipment factory
>

Single transistor photocoupler RENESAS PS2561-1-A designed for operation in telephone and FA OA equipment

Specifications
Rise time:
3us
Fall time:
5us
Output Current:
50mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current transfer ratio:
80%;400%
Forward Current(If):
80mA
Input type:
DC
Isolation Voltage(Vrms):
5kV
Pd - Power Dissipation:
150mW
Number of Channels:
1
Mfr. Part #:
PS2561-1-A
Package:
DIP-4
Key Attributes
Model Number: PS2561-1-A
Product Description

Product Overview

The PS2561-1 series are high isolation voltage single transistor type photocouplers. They consist of a GaAs light emitting diode and an NPN silicon phototransistor, offering high speed switching and high current transfer ratio. Available in various package types including DIP, lead bending for surface mount, and wide lead bending for surface mount, these devices are suitable for applications such as power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.

Product Attributes

  • Brand: Not specified
  • Origin: Made in Japan / Made in Taiwan
  • Material: Not specified
  • Color: Not specified
  • Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, VDE (Option)

Technical Specifications

ModelPackage TypeIsolation Voltage (BV)Collector to Emitter Voltage (VCEO)Current Transfer Ratio (CTR) TYP.Switching Time (tr) TYP.Switching Time (tf) TYP.
PS2561-1DIP5000 Vr.m.s.80 V200%3 s5 s
PS2561L-1Lead Bending (Gull-wing)5000 Vr.m.s.80 V200%3 s5 s
PS2561L1-1Wide Lead Bending5000 Vr.m.s.80 V200%3 s5 s
PS2561L2-1Wide Lead Bending for Surface Mount5000 Vr.m.s.80 V200%3 s5 s
ParameterSymbolConditionsMIN.TYP.MAX.Unit
Diode Forward VoltageVFIF = 10 mA1.171.4V
Reverse CurrentIRVR = 5 V5A
Terminal CapacitanceCtV = 0 V, f = 1.0 MHz50pF
Collector to Emitter Dark CurrentICEOVCE = 80 V, IF = 0 mA100nA
Collector Saturation VoltageVCE (sat)IF = 10 mA, IC = 2 mA0.3V
Isolation ResistanceRI-OVI-O = 1.0 kVDC1011
Isolation CapacitanceCI-OV = 0 V, f = 1.0 MHz0.5pF
ParameterSymbolRatingsUnit
Diode Reverse VoltageVR6V
Forward Current (DC)IF80mA
Power Dissipation (Diode)PD150mW
Peak Forward CurrentIFP1A
Emitter to Collector VoltageVECO7V
Collector CurrentIC50mA
Power Dissipation (Transistor)PC150mW
Operating Ambient TemperatureTA55 to +100C
Storage TemperatureTstg55 to +150C

2311160346_RENESAS-PS2561-1-A_C17597435.pdf

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