GaAs LED and NPN Silicon Darlington Phototransistor Optocoupler RENESAS PS2533-1-A with 5000 Vrms Isolation Voltage
Key Attributes
Model Number:
PS2533-1-A
Product Custom Attributes
Output Current:
150mA
Fall Time:
100us
Rise Time:
100us
Vce Saturation(VCE(sat)):
1V@1mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
350V
Reverse Voltage:
6V
Current Transfer Ratio:
1500%;6500%
Forward Current(If):
80mA
Pd - Power Dissipation:
300mW
Number Of Channels:
1
Load Type:
Darlington Transistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2533-1-A
Package:
DIP-4
Product Description
Product Overview
The PS2533-1 and PS2533L-1 are optically coupled isolators featuring a GaAs light-emitting diode and an NPN silicon Darlington phototransistor. They offer high collector-to-emitter voltage (VCEO = 350 V) and high isolation voltage (BV = 5,000 Vr.m.s.), making them suitable for applications requiring robust electrical isolation. The PS2533-1 is available in a plastic DIP, while the PS2533L-1 is a lead-bending type for surface mount applications. Key features include high current transfer ratio (CTR = 4,000% TYP.) and high-speed switching. These devices are used in telephone exchange equipment and FAX/MODEM systems.
Product Attributes
- Brand: Not specified
- Origin: Made in Japan
- Material: Not specified
- Color: Not specified
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, VDE (Option)
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | 80 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Power Dissipation (Diode) | PD | 150 | mW | |||
| Peak Forward Current*1 | IFP | PW = 100 s, Duty Cycle = 1 % | 1 | A | ||
| Collector to Emitter Voltage | VCEO | 350 | V | |||
| Emitter to Collector Voltage | VECO | 0.6 | V | |||
| Collector Current | IC | 150 | mA | |||
| Power Dissipation (Transistor) | PC | 300 | mW | |||
| Isolation Voltage*2 | BV | AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 5000 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | 55 | +100 | C | ||
| Storage Temperature | Tstg | 55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 10 mA | 1.15 | 1.40 | V | |
| Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 30 | pF | ||
| Collector to Emitter Dark Current | ICEO | VCE = 350 V, IF = 0 mA | 400 | nA | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | IF = 1 mA, VCE = 2 V | 1500 | 4000 | 6500 | % |
| Collector Saturation Voltage | VCE (sat) | IF = 1 mA, IC = 2 mA | 1.0 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.6 | pF | ||
| Rise Time*1 | tr | VCC = 5 V, IC = 10 mA, RL = 100 | 100 | s | ||
| Fall Time*1 | tf | VCC = 5 V, IC = 10 mA, RL = 100 | 100 | s | ||
2212222008_RENESAS-PS2533-1-A_C5334520.pdf
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