High density mounting multi photocoupler RENESAS PS2733-1-F3-A designed for electrical isolation and signal transmission
Key Attributes
Model Number:
PS2733-1-F3-A
Product Custom Attributes
Output Current:
150mA
Fall Time:
100us
Rise Time:
100us
Vce Saturation(VCE(sat)):
1V@1mA,1mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
350V
Reverse Voltage:
6V
Current Transfer Ratio:
1500%;4000%
Forward Current(If):
50mA
Pd - Power Dissipation:
-
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
2.5kV
Mfr. Part #:
PS2733-1-F3-A
Package:
SOP-4
Product Description
Product Overview
The PS2733-1 is a high collector to emitter voltage SOP multi-photocoupler designed for high-density mounting applications. It features a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor, offering high isolation voltage and a small, thin package. This product is ideal for applications requiring electrical isolation and signal transmission in hybrid ICs, telephone/telegraph receivers, and FAX machines.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet reference)
- Origin: Made in Japan (indicated by marking example)
- Certifications: UL, CSA, BSI, VDE (Option)
- Pb-Free product
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | 50 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Power Dissipation (Diode) | PD | 80 | mW | |||
| Peak Forward Current*1 | IFP | PW = 100 s, Duty Cycle = 1% | 1 | A | ||
| Transistor Collector to Emitter Voltage | VCEO | 350 | V | |||
| Transistor Emitter to Collector Voltage | VECO | 0.3 | V | |||
| Collector Current | IC | 150 | mA | |||
| Power Dissipation (Transistor) | PC | 150 | mW | |||
| Isolation Voltage*2 | BV | AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 2 500 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | 55 | +100 | C | ||
| Storage Temperature | Tstg | 55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 10 mA | 1.15 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | s | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 30 | pF | ||
| Collector to Emitter Dark Current | ICEO | IF = 0 mA, VCE = 300 V | 400 | nA | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | IF = 1 mA, VCE = 2 V | 1 500 | 4 000 | % | |
| Collector Saturation Voltage | VCE (sat) | IF = 1 mA, IC = 2 mA | 1.0 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.4 | pF | ||
| Rise Time*1 | tr | VCC = 5 V, IC = 10 mA, RL = 100 | 100 | s | ||
| Fall Time*1 | tf | VCC = 5 V, IC = 10 mA, RL = 100 | 100 | s | ||
2212230930_RENESAS-PS2733-1-F3-A_C5334563.pdf
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