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quality optically coupled isolator RENESAS PS2501AL-1-F3-A featuring GaAs LED and NPN silicon phototransistor factory
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quality optically coupled isolator RENESAS PS2501AL-1-F3-A featuring GaAs LED and NPN silicon phototransistor factory
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optically coupled isolator RENESAS PS2501AL-1-F3-A featuring GaAs LED and NPN silicon phototransistor

Specifications
Rise time:
3us
Output Current:
30mA
Fall time:
5us
Vce Saturation(VCE(sat)):
130mV@10mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Current transfer ratio:
400%;50%
Forward Current(If):
30mA
Pd - Power Dissipation:
150mW
Number of Channels:
1
Load Type:
Phototransistor
Input type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2501AL-1-F3-A
Package:
SMD-4P
Key Attributes
Model Number: PS2501AL-1-F3-A
Product Description

Product Description

The PS2501A-1 and PS2501AL-1 are high isolation voltage single transistor type optically coupled isolators. They integrate a GaAs light emitting diode with an NPN silicon phototransistor, offering excellent cost performance. The PS2501A-1 is available in a plastic DIP package, while the PS2501AL-1 features lead bending for surface mount applications. These photocouplers are ideal for applications requiring reliable isolation, such as power supplies, telephone/FAX systems, FA/OA equipment, and programmable logic controllers.

Product Attributes

  • Brand: Renesas Electronics (implied by datasheet format R08DS0209EJ0100)
  • Origin: Made in Japan or Made in Taiwan (based on marking example)
  • Certifications: UL approved (UL1577, Double protection)
  • Material: GaAs light emitting diode, NPN silicon phototransistor, Plastic DIP, Lead Bending Type
  • Color: Not specified

Technical Specifications

ParameterSymbolPS2501A-1 / PS2501AL-1Unit
ABSOLUTE MAXIMUM RATINGS
Diode Reverse VoltageVR6V
Diode Forward Current (DC)IF30mA
Diode Power DissipationPD150mW
Transistor Collector to Emitter VoltageVCEO70V
Transistor Emitter to Collector VoltageVECO5V
Transistor Collector CurrentIC30mA
Transistor Power DissipationPC150mW
Isolation Voltage (AC for 1 minute)BV5000Vr.m.s.
Operating Ambient TemperatureTA-55 to +100C
Storage TemperatureTstg-55 to +150C
ELECTRICAL CHARACTERISTICS
Diode Forward VoltageVF1.2 / 1.4 (MAX.)V (IF = 10 mA)
Diode Reverse CurrentIR5 (MAX.)A (VR = 5 V)
Terminal CapacitanceCt10 (TYP.)pF (V = 0 V, f = 1.0 MHz)
Transistor Collector to Emitter Dark CurrentICEO100 (MAX.)nA (VCE = 70 V, IF = 0 mA)
Current Transfer RatioCTR50 to 400 (MIN./MAX.)% (IF = 5 mA, VCE = 5 V)
Collector Saturation VoltageVCE (sat)0.13 / 0.3 (MAX.)V (IF = 10 mA, IC = 2 mA)
Isolation ResistanceRI-O1011 (MIN.) (VI-O = 1.0 kVDC)
Isolation CapacitanceCI-O0.4 (TYP.)pF (V = 0 V, f = 1.0 MHz)
Rise Timetr3 (TYP.)s (VCC = 10 V, IC = 2 mA, RL = 100 )
Fall Timetf5 (TYP.)s (VCC = 10 V, IC = 2 mA, RL = 100 )

2504101957_RENESAS-PS2501AL-1-F3-A_C17349957.pdf

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