optically coupled isolator RENESAS PS2501AL-1-F3-A featuring GaAs LED and NPN silicon phototransistor
Key Attributes
Model Number:
PS2501AL-1-F3-A
Product Custom Attributes
Rise Time:
3us
Output Current:
30mA
Fall Time:
5us
Vce Saturation(VCE(sat)):
130mV@10mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
70V
Reverse Voltage:
6V
Current Transfer Ratio:
400%;50%
Forward Current(If):
30mA
Pd - Power Dissipation:
150mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2501AL-1-F3-A
Package:
SMD-4P
Product Description
Product Description
The PS2501A-1 and PS2501AL-1 are high isolation voltage single transistor type optically coupled isolators. They integrate a GaAs light emitting diode with an NPN silicon phototransistor, offering excellent cost performance. The PS2501A-1 is available in a plastic DIP package, while the PS2501AL-1 features lead bending for surface mount applications. These photocouplers are ideal for applications requiring reliable isolation, such as power supplies, telephone/FAX systems, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet format R08DS0209EJ0100)
- Origin: Made in Japan or Made in Taiwan (based on marking example)
- Certifications: UL approved (UL1577, Double protection)
- Material: GaAs light emitting diode, NPN silicon phototransistor, Plastic DIP, Lead Bending Type
- Color: Not specified
Technical Specifications
| Parameter | Symbol | PS2501A-1 / PS2501AL-1 | Unit |
|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | |||
| Diode Reverse Voltage | VR | 6 | V |
| Diode Forward Current (DC) | IF | 30 | mA |
| Diode Power Dissipation | PD | 150 | mW |
| Transistor Collector to Emitter Voltage | VCEO | 70 | V |
| Transistor Emitter to Collector Voltage | VECO | 5 | V |
| Transistor Collector Current | IC | 30 | mA |
| Transistor Power Dissipation | PC | 150 | mW |
| Isolation Voltage (AC for 1 minute) | BV | 5000 | Vr.m.s. |
| Operating Ambient Temperature | TA | -55 to +100 | C |
| Storage Temperature | Tstg | -55 to +150 | C |
| ELECTRICAL CHARACTERISTICS | |||
| Diode Forward Voltage | VF | 1.2 / 1.4 (MAX.) | V (IF = 10 mA) |
| Diode Reverse Current | IR | 5 (MAX.) | A (VR = 5 V) |
| Terminal Capacitance | Ct | 10 (TYP.) | pF (V = 0 V, f = 1.0 MHz) |
| Transistor Collector to Emitter Dark Current | ICEO | 100 (MAX.) | nA (VCE = 70 V, IF = 0 mA) |
| Current Transfer Ratio | CTR | 50 to 400 (MIN./MAX.) | % (IF = 5 mA, VCE = 5 V) |
| Collector Saturation Voltage | VCE (sat) | 0.13 / 0.3 (MAX.) | V (IF = 10 mA, IC = 2 mA) |
| Isolation Resistance | RI-O | 1011 (MIN.) | (VI-O = 1.0 kVDC) |
| Isolation Capacitance | CI-O | 0.4 (TYP.) | pF (V = 0 V, f = 1.0 MHz) |
| Rise Time | tr | 3 (TYP.) | s (VCC = 10 V, IC = 2 mA, RL = 100 ) |
| Fall Time | tf | 5 (TYP.) | s (VCC = 10 V, IC = 2 mA, RL = 100 ) |
2504101957_RENESAS-PS2501AL-1-F3-A_C17349957.pdf
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