Photocoupler RENESAS PS2581L2-A featuring long creepage and wide lead bending type for surface mounting in power supplies
Key Attributes
Model Number:
PS2581L2-A
Product Custom Attributes
Rise Time:
3us
Fall Time:
5us
Output Current:
50mA
Vce Saturation(VCE(sat)):
300mV@10mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
80%;400%
Forward Current(If):
80mA
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
PS2581L2-A
Package:
SMD-4P
Product Description
Product Overview
The PS2581L1 and PS2581L2 are high-isolation voltage, long creepage type 4-pin photocouplers. They feature a GaAs light emitting diode and an NPN silicon phototransistor, offering high-speed switching and a high current transfer ratio. The PS2581L2 is a wide lead bending type suitable for surface mounting. These photocouplers are ideal for applications requiring electrical isolation, such as power supplies, telephone/FAX systems, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Not specified
- Origin: Made in Japan or Made in Taiwan
- Material: Plastic DIP (Dual In-line Package)
- Color: Not specified
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, VDE
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | 80 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Power Dissipation | PD | 150 | mW | |||
| Peak Forward Current*1 | IFP | PW = 100 s, Duty Cycle = 1 % | 1 | A | ||
| Collector to Emitter Voltage | VCEO | 80 | V | |||
| Emitter to Collector Voltage | VECO | 7 | V | |||
| Collector Current | IC | 50 | mA | |||
| Power Dissipation | PC | 150 | mW | |||
| Isolation Voltage*2 | BV | AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together. | 5000 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | 55 | +100 | C | ||
| Storage Temperature | Tstg | 55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = 10 mA | 1.17 | 1.4 | V | |
| Reverse Current | IR | VR = 5 V | 5 | A | ||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 50 | pF | ||
| Collector to Emitter Dark Current | ICEO | VCE = 80 V, IF = 0 mA | 100 | nA | ||
| Coupled Current Transfer Ratio (IC/IF)*1 | CTR | IF = 5 mA, VCE = 5 V | 80 | 200 | 400 | % |
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.5 | pF | ||
| Rise Time*2 | tr | VCC = 10 V, IC = 2 mA, RL = 100 | 3 | s | ||
| Fall Time*2 | tf | VCC = 10 V, IC = 2 mA, RL = 100 | 5 | s | ||
2311142219_RENESAS-PS2581L2-A_C17380973.pdf
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