High speed switching optocoupler RENESAS PS2706-1-F3-A with GaAs LED and Darlington phototransistor
Key Attributes
Model Number:
PS2706-1-F3-A
Product Custom Attributes
Rise Time:
200us
Fall Time:
200us
Output Current:
200mA
Vce Saturation(VCE(sat)):
1V@1mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
40V
Reverse Voltage:
-
Current Transfer Ratio:
200%;2000%
Forward Current(If):
50mA
Pd - Power Dissipation:
-
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
AC,DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
PS2706-1-F3-A
Package:
SOP-4
Product Description
Product Overview
The PS2706-1 is an optically coupled isolator featuring a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. Housed in a plastic SOP for high-density applications, it offers AC input response, high current transfer ratio (2000% TYP.), high isolation voltage (3750 Vr.m.s.), and high-speed switching (200 s TYP.). It is designed for applications such as Hybrid ICs, telephone and exchange equipment, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet format)
- Origin: Made in Japan (indicated in marking example)
- Certifications: UL, CSA, BSI, VDE (Option)
- Material: GaAs light emitting diode, NPN silicon phototransistor, Plastic SOP
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Diode Forward Current (DC) | IF | ±50 | mA | |||
| Power Dissipation | PD | 80 | mW | |||
| Peak Forward Current | IFP | PW = 100 µs, Duty Cycle = 1% | ±1 | A | ||
| Transistor Collector to Emitter Voltage | VCEO | 40 | V | |||
| Transistor Emitter to Collector Voltage | VECO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Transistor Power Dissipation | PC | 150 | mW | |||
| Isolation Voltage | BV | AC voltage for 1 minute at TA = 25°C, RH = 60% (Pins 1-2 shorted, 3-4 shorted) | 3750 | Vr.m.s. | ||
| Operating Ambient Temperature | TA | -55 | +100 | °C | ||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Diode Forward Voltage | VF | IF = ±5 mA | 1.1 | 1.4 | V | |
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 60 | pF | ||
| Transistor Collector to Emitter Dark Current | ICEO | IF = 0 mA, VCE = 40 V | 400 | nA | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | IF = ±1 mA, VCE = 2 V | 2000 | % | ||
| CTR Ratio | CTR1/ CTR2 | IF = ±1 mA, VCE = 2 V | 0.3 | 3.0 | ||
| Collector Saturation Voltage | VCE (sat) | IF = ±1 mA, IC = 2 mA | 1.0 | V | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | Ω | ||
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.4 | pF | ||
| Rise Time | tr | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 200 | µs | ||
| Fall Time | tf | VCC = 5 V, IC = 2 mA, RL = 100 Ω | 200 | µs | ||
2311101855_RENESAS-PS2706-1-F3-A_C19191092.pdf
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