High Density Optocoupler RENESAS PS2811-1-F3-A with Small Outline Package and High CTR Performance
Key Attributes
Model Number:
PS2811-1-F3-A
Product Custom Attributes
Output Current:
40mA
Rise Time:
4us
Fall Time:
5us
Vce Saturation(VCE(sat)):
300mV@1mA,0.2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
40V
Reverse Voltage:
6V
Current Transfer Ratio:
100%;400%
Forward Current(If):
50mA
Number Of Channels:
1
Load Type:
Phototransistor
Voltage - Forward(Vf):
1.15V
Input Type:
DC
Isolation Voltage(Vrms):
2.5kV
Mfr. Part #:
PS2811-1-F3-A
Package:
SSOP-4
Product Description
Product Overview
The PS2811-1 and PS2811-4 are optically coupled isolators featuring a GaAs light emitting diode and an NPN silicon phototransistor. Designed for high-density applications, these devices are housed in a compact Shrink SOP (Small Outline Package) with a pin pitch of 1.27 mm. They offer a high current transfer ratio (CTR = 200% TYP. @ IF = 1 mA) and high isolation voltage (BV = 2500 Vr.m.s.). Ideal for programmable logic controllers, small power supplies, hybrid ICs, and modems/FAX.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet format)
- Origin: Made in Taiwan / Made in Japan (as per marking example)
- Certifications: UL, CSA, VDE (Option)
- Material: Pb-Free product
Technical Specifications
| Parameter | Symbol | PS2811-1 | PS2811-4 | Unit | Conditions | MIN. | TYP. | MAX. | |
| Diode Characteristics | IF | 50 | 50 | mA/ch | (DC) | ||||
| VR | 6 | V | |||||||
| PD/C | 0.6 | 0.7 | mW/C | Power Dissipation Derating | |||||
| PD | 60 | 70 | mW/ch | Power Dissipation | |||||
| IFP *1 | 1.0 | 1.0 | A/ch | Peak Forward Current | |||||
| VF | 1.15 | 1.4 | V | IF = 5 mA | |||||
| IR | 5 | A | VR = 5 V | ||||||
| Ct | 15 | pF | V = 0 V, f = 1 MHz | ||||||
| Transistor Characteristics | VCEO | 40 | 40 | V | Collector to Emitter Voltage | ||||
| VECO | 5 | V | Emitter to Collector Voltage | ||||||
| IC | 40 | mA/ch | Collector Current | ||||||
| PC/C | 1.2 | mW/C | Power Dissipation Derating | ||||||
| PC | 120 | mW/ch | Power Dissipation | ||||||
| ICEO | 100 | nA | IF = 0 mA, VCE = 40 V | ||||||
| VCE (sat) | 0.3 | V | IF = 1 mA, IC = 0.2 mA | ||||||
| CI-O | 0.4 | pF | V = 0 V, f = 1 MHz | ||||||
| Coupled Characteristics | CTR *1 | 100 | 200 | 400 | % | IF = 1 mA, VCE = 5 V | |||
| RI-O | 1011 | VI-O = 1 kVDC | |||||||
| tr *2 | 4 | s | VCC = 5 V, IC = 2 mA, RL = 100 | ||||||
| tf *2 | 5 | s | VCC = 5 V, IC = 2 mA, RL = 100 | ||||||
| ton *2 | 7 | s | VCC = 5 V, IC = 2 mA, RL = 100 | ||||||
| toff *2 | 5 | s | VCC = 5 V, IC = 2 mA, RL = 100 | ||||||
| Isolation | BV | 2 500 | Vr.m.s. | AC voltage for 1 minute at TA = 25C, RH = 60% | |||||
| Operating Conditions | TA | -55 to +100 | C | Operating Ambient Temperature | |||||
| Storage Conditions | Tstg | -55 to +150 | C | Storage Temperature | |||||
2404161726_RENESAS-PS2811-1-F3-A_C22384900.pdf
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