SOP multi-photocoupler RENESAS PS2702-1-F3-A featuring high current transfer ratio and speed switching

Key Attributes
Model Number: PS2702-1-F3-A
Product Custom Attributes
Rise Time:
70us
Fall Time:
60us
Output Current:
200mA
Vce Saturation(VCE(sat)):
1V@1mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
40V
Reverse Voltage:
6V
Load Type:
Darlington Transistor
Current Transfer Ratio:
200%;2000%
Forward Current(If):
50mA
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Number Of Channels:
1
Mfr. Part #:
PS2702-1-F3-A
Package:
SOP-4
Product Description

Product Overview

The PS2702-1 is a high isolation voltage Darlington transistor SOP multi-photocoupler designed for high-density applications. It features a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor, offering a high current transfer ratio (CTR = 2,000% TYP.) and high-speed switching. The device is mounted in a small and thin SOP package with a shield effect to block ambient light, making it suitable for various electronic systems.

Product Attributes

  • Brand: Renesas Electronics (implied by datasheet numbering R08DS0099EJ0302)
  • Origin: Made in Taiwan / Made in Japan (indicated by marking example)
  • Certifications: UL approved (UL1577), CSA approved (CAN/CSA-C22.2 No. 62368-1), BSI approved (BS EN 62368-1), VDE approved (DIN EN 60747-5-5 Option)

Technical Specifications

ParameterSymbolConditionsMIN.TYP.MAX.Unit
ELECTRICAL CHARACTERISTICS
Diode Forward VoltageVFIF = 5 mA1.11.4V
Reverse CurrentIRVR = 5 V5µA
Terminal CapacitanceCtV = 0 V, f = 1 MHz30pF
Collector to Emitter Dark CurrentICEOIF = 0 mA, VCE = 40 V400nA
Coupled Current Transfer Ratio (IC/IF)CTRIF = 1 mA, VCE = 2 V2002000%
Collector Saturation VoltageVCE (sat)IF = 1 mA, IC = 2 mA1.0V
Isolation ResistanceRI-OVI-O = 1 kVDC1011Ω
Isolation CapacitanceCI-OV = 0 V, f = 1 MHz0.4pF
Rise TimetrVCC = 5 V, IC = 2 mA, RL = 100 Ω70µs
Fall TimetfVCC = 5 V, IC = 2 mA, RL = 100 Ω60µs
Turn-on TimetonVCC = 5 V, IC = 2 mA, RL = 100 Ω90µs
Turn-off TimetoffVCC = 5 V, IC = 2 mA, RL = 100 Ω60µs
ABSOLUTE MAXIMUM RATINGS
Diode Forward Current (DC)IF50mA
Reverse VoltageVR6.0V
Power Dissipation (Diode)PD80mW
Peak Forward CurrentIFPPW = 100 µs, Duty Cycle = 1%1A
Collector to Emitter VoltageVCEO40V
Emitter to Collector VoltageVECO6V
Collector CurrentIC200mA
Power Dissipation (Transistor)PC150mW
Isolation VoltageBVAC voltage for 1 minute at TA = 25°C, RH = 60%3750Vr.m.s.
Operating Ambient TemperatureTA-55+100°C
Storage TemperatureTstg-55+150°C

2504101957_RENESAS-PS2702-1-F3-A_C17296984.pdf

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