photocoupler RENESAS PS2833-1-A with GaAs led and silicon darlington phototransistor in 4 pin SSOP package
Key Attributes
Model Number:
PS2833-1-A
Product Custom Attributes
Rise Time:
20us
Fall Time:
5us
Output Current:
60mA
Vce Saturation(VCE(sat)):
1V@1mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
350V
Reverse Voltage:
6V
Current Transfer Ratio:
4500%;400%
Forward Current(If):
50mA
Number Of Channels:
1
Load Type:
Darlington Transistor
Input Type:
DC
Isolation Voltage(Vrms):
2.5kV
Mfr. Part #:
PS2833-1-A
Package:
SOP-4
Product Description
Product Overview
The PS2833-1 and PS2833-4 are high collector-to-emitter voltage photocouplers in a compact 4 and 16-pin SSOP package, designed for high-density mounting. They feature a GaAs light-emitting diode and an NPN silicon Darlington-connected phototransistor, offering high isolation voltage and a high current transfer ratio. These photocouplers are suitable for applications such as Hybrid ICs and telephone/telegraph receivers.
Product Attributes
- Brand: Not explicitly mentioned
- Origin: Made in Japan
- Material: GaAs light emitting diode and NPN silicon darlington-connected phototransistor
- Color: Not specified
- Certifications: UL approved (UL1577), CSA approved (CAN/CSA-C22.2 No. 62368-1), VDE approved (DIN EN 60747-5-5 - Option)
Technical Specifications
| Parameter | Symbol | PS2833-1 | PS2833-4 | Unit | Conditions | MIN. | TYP. | MAX. | |
| Diode Characteristics | Forward Current (DC) | 50 | mA/ch | ||||||
| Reverse Voltage | 6 | V | |||||||
| Power Dissipation Derating | 0.6 | mW/C | |||||||
| Power Dissipation | 60 | mW/ch | |||||||
| Peak Forward Current*1 | 1 | A/ch | PW = 100 s, Duty Cycle = 1% | ||||||
| Forward Voltage | VF | V | IF = 10 mA | 1.2 | 1.4 | ||||
| Reverse Current | IR | A | VR = 5 V | 5 | |||||
| Terminal Capacitance | Ct | pF | V = 0 V, f = 1 MHz | 15 | |||||
| Power Dissipation Derating | PD/C | 0.8 | mW/C | ||||||
| Power Dissipation | PD | 80 | mW/ch | ||||||
| Power Dissipation Derating | PD/C | 0.6 | mW/C | ||||||
| Transistor Characteristics | Collector to Emitter Voltage | VCEO | 350 | V | |||||
| Emitter to Collector Voltage | VECO | 0.3 | V | ||||||
| Collector Current | IC | 60 | mA/ch | ||||||
| Power Dissipation Derating | PC/C | 1.2 | mW/C | ||||||
| Power Dissipation | PC | 120 | mW/ch | ||||||
| Collector to Emitter Dark Current | ICEO | nA | IF = 0 mA, VCE = 300 V | 400 | |||||
| Collector Saturation Voltage | VCE (sat) | V | IF = 1 mA, IC = 2 mA | 1.0 | |||||
| Collector Current | IC | mA | IF = 1 mA, IC = 2 mA | 2 | |||||
| Collector Current | IC | mA | IF = 0.5 mA | 0.5 | |||||
| Collector Current | IC | mA | IF = 5 mA | 5 | |||||
| Coupled Characteristics | Current Transfer Ratio (IC/IF) | CTR | 400 | 4500 | % | IF = 1 mA, VCE = 2 V | 2000 | ||
| Current Transfer Ratio (IC/IF) | CTR | % | IF = 1 mA, VCE = 2 V | ||||||
| Isolation Voltage*2 | BV | 2500 | Vr.m.s. | AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together (PS2833-1). Pins 1-8 shorted together, 9-16 shorted together (PS2833-4). | |||||
| Isolation Resistance | RI-O | VI-O = 1 kVDC | 1011 | ||||||
| Isolation Capacitance | CI-O | pF | V = 0 V, f = 1 MHz | 0.4 | |||||
| Switching Characteristics | Rise Time*1 | tr | s | VCC = 5 V, IC = 10 mA, RL = 100 | 20 | ||||
| Fall Time*1 | tf | s | VCC = 5 V, IC = 10 mA, RL = 100 | 5 | |||||
| Switching Time | t | s | VCC = 10 V, IC = 10 mA, CTR = 2300% | 1000 | |||||
| Environmental | Operating Ambient Temperature | TA | C | -55 | +100 | ||||
| Storage Temperature | Tstg | C | -55 | +150 | |||||
| Package Dimensions | 4, 16-pin SSOP | ||||||||
| Weight | 4-pin SSOP: 0.05 g (typ.) | 16-pin SSOP: 0.2 g (typ.) | g | ||||||
2507281725_RENESAS-PS2833-1-A_C22421990.pdf
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