High speed switching optocoupler RENESAS PS2561DL2-1Y-A featuring GaAs LED and NPN silicon phototransistor
Key Attributes
Model Number:
PS2561DL2-1Y-A
Product Custom Attributes
Rise Time:
3us
Fall Time:
5us
Output Current:
50mA
Vce Saturation(VCE(sat)):
300mV@10mA,2mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
80V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
400%;50%
Forward Current(If):
40mA
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
PS2561DL2-1Y-A
Package:
SMD-4P
Product Description
Product Description
The PS2561D-1 is an optically coupled isolator featuring a GaAs light emitting diode and an NPN silicon phototransistor. It is available in a plastic DIP (Dual In-line Package) and lead bending types for surface mounting, including options for increased creepage distance. This photocoupler is designed for applications requiring high isolation voltage, high collector to emitter voltage, high current transfer ratio, and high-speed switching. It operates in ambient temperatures up to 110C.
Applications
- Power supply
- Telephone/FAX
- FA/OA equipment
- Programmable logic controllers
Product Attributes
- Brand: Not specified
- Origin: Made in Taiwan / Made in Japan (assembly lot specific)
- Material: Plastic DIP, NPN silicon phototransistor, GaAs light emitting diode
- Color: Not specified
- Certifications: UL, CSA, BSI, SEMKO, NEMKO, FIMKO, DEMKO, CQC, VDE (Option)
- Safety Standards: UL1577, Double protection; CAN/CSA-C22.2 No. 62368-1, Reinforced insulation; BS EN 62368-1, Reinforced insulation; EN 62368-1, IEC 62368-1, Reinforced insulation; GB8898, GB4943.1, Reinforced insulation; DIN EN 60747-5-5 (Option)
- Pb-Free Product: Yes
Technical Specifications
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit | Notes | |
| Diode Characteristics | Reverse Voltage | VR | 6 | V | ||||
| Forward Current (DC) | IF | 40 | mA | |||||
| Power Dissipation | PD | 150 | mW | Derating 1.5 mW/C | ||||
| Peak Forward Current | IFP | PW = 100 s, Duty Cycle = 1% | 1 | A | *1 | |||
| Forward Voltage | VF | IF = 10 mA | 1.2 | 1.4 | V | |||
| Reverse Current | IR | VR = 5 V | 5 | A | ||||
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 10 | pF | ||||
| Transistor Characteristics | Collector to Emitter Voltage | VCEO | 80 | V | ||||
| Emitter to Collector Voltage | VECO | 7 | V | |||||
| Collector Current | IC | 50 | mA | |||||
| Power Dissipation | PC | 150 | mW | Derating 1.5 mW/C | ||||
| Collector to Emitter Dark Current | ICEO | VCE = 48 V, IF = 0 mA | 100 | nA | ||||
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 | V | ||||
| Coupled Current Transfer Ratio | CTR | IF = 5 mA, VCE = 5 V | 50 | 160 | 400 | % | *1, CTR Ranks: H, Q, W, L, N | |
| Switching Characteristics | Rise Time | tr | VCC = 10 V, IC = 2 mA, RL = 100 | 3 | s | *2 | ||
| Fall Time | tf | VCC = 10 V, IC = 2 mA, RL = 100 | 5 | s | *2 | |||
| Isolation Characteristics | Isolation Voltage | BV | AC voltage for 1 minute at TA = 25C, RH = 60% | 5000 | Vr.m.s. | *2 | ||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||||
| Package Dimensions | Air Distance (MIN.) | 7 mm (PS2561D/DL), 8 mm (PS2561DL1/DL2) | mm | |||||
| Creepage Distance (MIN.) | 7 mm (PS2561D/DL), 8 mm (PS2561DL1/DL2) | mm |
2311140715_RENESAS-PS2561DL2-1Y-A_C17270925.pdf
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