High speed switching photocoupler RENESAS PS2703-1-F3-A with integrated GaAs LED and NPN phototransistor

Key Attributes
Model Number: PS2703-1-F3-A
Product Custom Attributes
Output Current:
30mA
Fall Time:
10us
Rise Time:
10us
Vce Saturation(VCE(sat)):
300mV@10mA,10mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
120V
Reverse Voltage:
6V
Current Transfer Ratio:
400%;50%
Forward Current(If):
50mA
Pd - Power Dissipation:
150mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
PS2703-1-F3-A
Package:
SOP-4-2.54mm
Product Description

Product Overview

The PS2703-1 is a high isolation voltage, high collector-to-emitter voltage SOP (Small Outline Package) type photocoupler. It integrates a GaAs light-emitting diode and an NPN silicon phototransistor, designed for high-density applications with excellent ambient light shielding. Key features include high isolation voltage (3750 Vr.m.s.), high collector-to-emitter voltage (120 V), and high-speed switching capabilities (10 s TYP. for rise and fall times). This product is suitable for various applications such as hybrid ICs, telephone/FAX systems, FA/OA equipment, programmable logic controllers, and power supplies.

Product Attributes

  • Brand: Not explicitly stated, but associated with R08DS0098EJ0302 series.
  • Origin: Made in Taiwan or Made in Japan (indicated by marking).
  • Certifications: UL (UL1577), CSA (CAN/CSA-C22.2 No. 62368-1), BSI (BS EN 62368-1), VDE (DIN EN 60747-5-5 - Option).

Technical Specifications

ParameterSymbolConditionsMIN.TYP.MAX.Unit
ABSOLUTE MAXIMUM RATINGS
Diode Forward Current (DC)IF50mA
Reverse VoltageVR6V
Power Dissipation DeratingPD/C0.8mW/C
Power DissipationPD80mW
Peak Forward CurrentIFPPW = 100 s, Duty Cycle = 1%1A
Transistor Collector to Emitter VoltageVCEO120V
Emitter to Collector VoltageVECO6V
Collector CurrentIC30mA
Power Dissipation DeratingPC/C1.5mW/C
Power DissipationPC150mW
Isolation VoltageBVAC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together.3 750Vr.m.s.
Operating Ambient TemperatureTA-55+100C
Storage TemperatureTstg-55+150C
ELECTRICAL CHARACTERISTICS
Diode Forward VoltageVFIF = 5 mA1.11.4V
Reverse CurrentIRVR = 5 V5A
Terminal CapacitanceCtV = 0 V, f = 1 MHz30pF
Transistor Collector to Emitter Dark CurrentICEOIF = 0 mA, VCE = 120 V100nA
Current Transfer Ratio (IC/IF)CTRIF = 5 mA, VCE = 5 V50150400%
Current Transfer Ratio (IC/IF)CTRIF = 1 mA, VCE = 5 V1080%
Collector Saturation VoltageVCE (sat)IF = 10 mA, IC = 2 mA0.3V
Isolation ResistanceRI-OVI-O = 1 kVDC1011
Isolation CapacitanceCI-OV = 0 V, f = 1 MHz0.4pF
Rise TimetrVCC = 5 V, IC = 2 mA, RL = 1 k10s
Fall Timetf10s
Turn-on Timeton13s
Turn-off Timetoff11s

2206302030_RENESAS-PS2703-1-F3-A_C3029055.pdf

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