High density application photocoupler RENESAS PS2801-1-F3-A featuring 2500 Vrms isolation and small thin SSOP package
Key Attributes
Model Number:
PS2801-1-F3-A
Product Custom Attributes
Rise Time:
3us
Output Current:
50mA
Fall Time:
5us
Vce Saturation(VCE(sat)):
300mV@10mA,2mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
80%;600%
Forward Current(If):
50mA
Pd - Power Dissipation:
-
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
2.5kV
Mfr. Part #:
PS2801-1-F3-A
Package:
SSOP-4-1.27mm
Product Description
Product Overview
The PS2801-1 and PS2801-4 are high isolation voltage SSOP photocouplers designed for high-density applications. They feature a GaAs light emitting diode and an NPN silicon phototransistor, offering excellent shield effect against ambient light. Key advantages include high isolation voltage (2500 Vr.m.s.), a small and thin package, high collector-emitter voltage (80V), and high-speed switching capabilities. These photocouplers are suitable for use in programmable logic controllers, measuring instruments, power supplies, and hybrid ICs.
Product Attributes
- Brand: Not specified
- Origin: Made in Taiwan, Made in Japan
- Certifications: UL (UL1577, Single protection), CSA (CAN/CSA-C22.2 No. 62368-1, Basic insulation), BSI (BS EN 62368-1, Basic/Supplementary insulation), VDE (DIN EN 60747-5-5 - Option)
- Material: GaAs light emitting diode, NPN silicon phototransistor
- Color: Not specified
Technical Specifications
| Parameter | Symbol | PS2801-1 | PS2801-4 | Unit | Conditions | MIN. | TYP. | MAX. |
|---|---|---|---|---|---|---|---|---|
| Diode Forward Voltage | VF | V | IF = 5 mA | 1.1 | 1.4 | |||
| Reverse Current | IR | A | VR = 5 V | 5 | ||||
| Terminal Capacitance | Ct | pF | V = 0 V, f = 1.0 MHz | 15 | ||||
| Transistor Collector to Emitter Dark Current | ICEO | nA | VCE = 80 V, IF = 0 mA | 100 | ||||
| Current Transfer Ratio (IC/IF) | CTR | 80 | 600 | % | IF = 5 mA, VCE = 5 V | |||
| Collector Saturation Voltage | VCE (sat) | V | IF = 10 mA, IC = 2 mA | 0.3 | ||||
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 | |||||
| Isolation Capacitance | CI-O | pF | V = 0 V, f = 1.0 MHz | 0.4 | ||||
| Rise Time | tr | s | VCC = 5 V, IC = 2 mA, RL = 100 | 3 | ||||
| Fall Time | tf | s | VCC = 5 V, IC = 2 mA, RL = 100 | 5 | ||||
| Turn-on Time | ton | s | 6 | |||||
| Turn-off Time | toff | s | 5 | |||||
| Diode Forward Current (DC) | IF | 50 | 50 | mA/ch | ||||
| Reverse Voltage | VR | 6 | 6 | V | ||||
| Power Dissipation (Diode) | PD | 60 | 80 | mW/ch | ||||
| Peak Forward Current | IFP | 1 | 1 | A/ch | PW = 100 s, Duty Cycle = 1% | |||
| Collector to Emitter Voltage | VCEO | 80 | 80 | V | ||||
| Emitter to Collector Voltage | VECO | 6 | 6 | V | ||||
| Collector Current | IC | 50 | 50 | mA/ch | ||||
| Power Dissipation (Transistor) | PC | 120 | 120 | mW/ch | ||||
| Isolation Voltage | BV | 2500 | 2500 | Vr.m.s. | AC voltage for 1 minute at TA = 25C, RH = 60% | |||
| Operating Ambient Temperature | TA | -55 to +100 | -55 to +100 | C | ||||
| Storage Temperature | Tstg | -55 to +150 | -55 to +150 | C |
2307141159_RENESAS-PS2801-1-F3-A_C7466736.pdf
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