High isolation voltage AC input response multi photocoupler RENESAS PS2705-1-F3-A suitable for programmable logic controllers

Key Attributes
Model Number: PS2705-1-F3-A
Product Custom Attributes
Output Current:
80mA
Rise Time:
3us@2mA,100Ω
Fall Time:
5us
Vce Saturation(VCE(sat)):
300mV@2mA,10mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
40V
Reverse Voltage:
-
Current Transfer Ratio:
50%;300%
Forward Current(If):
50mA
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
AC,DC
Isolation Voltage(Vrms):
3.75kV
Mfr. Part #:
PS2705-1-F3-A
Package:
SOP-4-2.54mm
Product Description

Product Description

The PS2705-1 is a high isolation voltage AC input response type SOP multi-photocoupler. It features a GaAs light emitting diode and an NPN silicon phototransistor in a Small Outline Package (SOP) designed for high-density mounting. Its shield effect cuts off ambient light, making it suitable for applications requiring reliable isolation. Key advantages include AC input response, high isolation voltage (3750 Vr.m.s.), high current transfer ratio (CTR 100% TYP.), and high-speed switching (tr 3 s TYP., tf 5 s TYP.). It is ideal for Hybrid ICs, Telephone/FAX, FA/OA equipment, programmable logic controllers, and power supplies.

Product Attributes

  • Brand: Renesas Electronics (implied by datasheet R08DS0093EJ0300)
  • Origin: Made in Taiwan / Made in Japan (depending on marking)
  • Certifications: UL, BSI (BS EN 60065, BS EN 60950), CSA (CA5A, CAN/CSA-C22.2 60065, 60950), SEMKO, NEMKO, DEMKO, FIMKO (EN 60065, EN 60950), DIN EN 60747-5-5 (VDE 0884-5) (Option)

Technical Specifications

ParameterSymbolConditionsMIN.TYP.MAX.Unit
ABSOLUTE MAXIMUM RATINGS
Diode Forward Current (DC)IF±50mA
Power DissipationPD80mW
Peak Forward Current*1IFPPW = 100 µs, Duty Cycle = 1%±1A
Transistor Collector to Emitter VoltageVCEO40V
Transistor Emitter to Collector VoltageVECO6V
Collector CurrentIC80mA
Power DissipationPC150mW
Isolation Voltage*2BVAC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together.3750Vr.m.s.
Operating Ambient TemperatureTA–55+100°C
Storage TemperatureTstg–55+150°C
ELECTRICAL CHARACTERISTICS
Diode Forward VoltageVFIF = ±5 mA1.11.4V
Terminal CapacitanceCtV = 0 V, f = 1 MHz60pF
Transistor Collector to Emitter Dark CurrentICEOIF = 0 mA, VCE = 40 V100nA
Coupled Current Transfer Ratio (IC/IF)*1CTRIF = ±5 mA, VCE = 5 V50100300%
CTR Ratio*2CTR1/ CTR2IF = ±5 mA, VCE = 5 V0.31.03.0
Collector Saturation VoltageVCE (sat)IF = ±10 mA, IC = 2 mA0.3V
Isolation ResistanceRI-OVI-O = 1 kVDC1011Ω
Isolation CapacitanceCI-OV = 0 V, f = 1 MHz0.4pF
Rise Time*3trVCC = 5 V, IC = 2 mA, RL = 100 Ω3µs
Fall Time*3tfVCC = 5 V, IC = 2 mA, RL = 100 Ω5µs
Turn-on Time*3tonVCC = 5 V, IC = 2 mA, RL = 100 Ω5µs
Turn-off Time*3toffVCC = 5 V, IC = 2 mA, RL = 100 Ω4µs

1912111437_RENESAS-PS2705-1-F3-A_C367377.pdf

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