High isolation voltage single transistor optocoupler RENESAS PS2501L-1-F3-A with GaAs LED and NPN phototransistor
Key Attributes
Model Number:
PS2501L-1-F3-A
Product Custom Attributes
Rise Time:
3us
Fall Time:
5us
Output Current:
50mA
Vce Saturation(VCE(sat)):
300mV@10mA,10mA
Operating Temperature:
-55℃~+100℃
Load Voltage:
80V
Reverse Voltage:
6V
Current Transfer Ratio:
80%;600%
Forward Current(If):
80mA
Pd - Power Dissipation:
150mW
Number Of Channels:
1
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
5kV
Mfr. Part #:
PS2501L-1-F3-A
Package:
SMD-4P
Product Description
Product Overview
The PS2501-1, -4 and PS2501L-1, -4 are high-isolation voltage single transistor type optically coupled isolators. They integrate a GaAs light emitting diode with an NPN silicon phototransistor, offering high-speed switching capabilities. The PS2501-1 and PS2501-4 are available in plastic DIP, while the PS2501L-1 and PS2501L-4 feature lead bending for surface mount applications. These devices are suitable for power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.
Product Attributes
- Brand: Renesas (implied by datasheet format R08DS0202EJ0100)
- Origin: Made in Japan / Made in Taiwan (Marking Example)
- Certifications: UL approved (UL1577, Double protection)
- Material: GaAs light emitting diode, NPN silicon phototransistor
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | PS2501-1, PS2501L-1 | PS2501-4, PS2501L-4 | Unit |
| Diode Reverse Voltage | VR | 6 | 6 | V | |
| Forward Current (DC) | IF | 80 | 80 | mA/ch | |
| Power Dissipation | PD | 150 | 120 | mW/ch | |
| Peak Forward Current | IFP | PW = 100 s, Duty Cycle = 1 % | 1 | 1 | A/ch |
| Transistor Collector to Emitter Voltage | VCEO | 80 | 80 | V | |
| Emitter to Collector Voltage | VECO | 7 | 7 | V | |
| Collector Current | IC | 50 | 50 | mA/ch | |
| Power Dissipation | PC | 150 | 120 | mW/ch | |
| Isolation Voltage | BV | AC voltage for 1 minute at TA = 25 C, RH = 60 % | 5000 | 5000 | Vr.m.s. |
| Operating Ambient Temperature | TA | -55 to +100 | -55 to +100 | C | |
| Storage Temperature | Tstg | -55 to +150 | -55 to +150 | C | |
| Diode Forward Voltage | VF | IF = 10 mA | 1.17 (TYP.) | 1.17 (TYP.) | V |
| Reverse Current | IR | VR = 5 V | 5 (MAX.) | 5 (MAX.) | A |
| Terminal Capacitance | Ct | V = 0 V, f = 1.0 MHz | 50 (TYP.) | 50 (TYP.) | pF |
| Collector to Emitter Dark Current | ICEO | VCE = 80 V, IF = 0 mA | 100 (MAX.) | 100 (MAX.) | nA |
| Coupled Current Transfer Ratio (IC/IF) | CTR | IF = 5 mA, VCE = 5 V | 80 to 600 (TYP.) | 80 to 600 (TYP.) | % |
| Collector Saturation Voltage | VCE (sat) | IF = 10 mA, IC = 2 mA | 0.3 (MAX.) | 0.3 (MAX.) | V |
| Isolation Resistance | RI-O | VI-O = 1.0 kVDC | 1011 (MIN.) | 1011 (MIN.) | |
| Isolation Capacitance | CI-O | V = 0 V, f = 1.0 MHz | 0.5 (TYP.) | 0.5 (TYP.) | pF |
| Rise Time | tr | VCC = 10 V, IC = 2 mA, RL = 100 | 3 (TYP.) | 3 (TYP.) | s |
| Fall Time | tf | VCC = 10 V, IC = 2 mA, RL = 100 | 5 (TYP.) | 5 (TYP.) | s |
2504101957_RENESAS-PS2501L-1-F3-A_C17184029.pdf
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