photocoupler RENESAS PS2801-1-F3-A/L with GaAs LED and silicon phototransistor in compact SSOP form
Product Overview
The PS2801-1 and PS2801-4 are high isolation voltage SSOP photocouplers. They feature a GaAs light emitting diode and an NPN silicon phototransistor in a compact, thin SSOP package designed for high-density applications. These devices offer excellent ambient light shielding and are suitable for various industrial applications requiring reliable optical isolation.
Product Attributes
- Brand: Renesas Electronics (implied by datasheet reference)
- Origin: Made in Taiwan / Made in Japan
- Certifications: UL, CSA, BSI, VDE (Option)
Technical Specifications
| Parameter | Symbol | PS2801-1 | PS2801-4 | Unit | Conditions | MIN. | TYP. | MAX. |
|---|---|---|---|---|---|---|---|---|
| Diode Characteristics | IF | mA | DC | 50/ch | ||||
| VR | V | 6 | ||||||
| PD | mW/ch | 60 | ||||||
| PD/C | mW/C | Derating | 0.6 | |||||
| IFP | *1 | A/ch | PW = 100 s, Duty Cycle = 1% | 1 | ||||
| VF | V | IF = 5 mA | 1.1 | 1.4 | ||||
| IR | A | VR = 5 V | 5 | |||||
| Transistor Characteristics | VCEO | V | 80 | |||||
| VECO | V | 6 | ||||||
| IC | mA/ch | DC | 50 | |||||
| PC | mW/ch | 120 | ||||||
| PC/C | mW/C | Derating | 1.2 | |||||
| ICEO | nA | VCE = 80 V, IF = 0 mA | 100 | |||||
| VCE (sat) | V | IF = 10 mA, IC = 2 mA | 0.3 | |||||
| Coupling Characteristics | CTR | *1 | % | IF = 5 mA, VCE = 5 V | 80 | 600 | ||
| RI-O | VI-O = 1.0 kVDC | 1011 | ||||||
| CI-O | pF | V = 0 V, f = 1.0 MHz | 0.4 | |||||
| Switching Characteristics | tr | *2 | s | VCC = 5 V, IC = 2 mA, RL = 100 | 3 | |||
| tf | *2 | s | VCC = 5 V, IC = 2 mA, RL = 100 | 5 | ||||
| Other | BV | *2 | 2 500 | Vr.m.s. | AC voltage for 1 minute at TA = 25C, RH = 60% | 2500 |
2206302045_RENESAS-PS2801-1-F3-A-L_C3293138.pdf
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