Robust Design Orient ORPC-817B-F Component Ideal for Industrial Machinery and Equipment Applications
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Industrial Control Optocoupler IL4208-X017T with 800 Volt Blocking Voltage and High dVdt Protection
Product OverviewThe Vishay Semiconductors IL420 and IL4208 are optocouplers featuring a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. They are designed for isolating low-voltage logic from AC mains lines, controlling various loads with high dV/dt and low input current sensitivity. The devices offer high input sensitivity (IFT < 2 mA), high blocking voltage (up to 800 V), and high static dV/dt (> 10 kV/s) due to a proprietary dV/dt clamp
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Optocoupler VISHAY BRT23F featuring GaAs IRLED and zero crossing detector for isolation of low voltage logic from AC lines
Product OverviewThe BRT21, BRT22, BRT23 is an optocoupler featuring an optically coupled GaAs IRLED to a photosensitive thyristor system. It includes integrated noise suppression and a zero crossing circuit, enabling low trigger currents of 1.2 mA and high dV/dt ratios of over 10 kV/s with load voltages up to 800 V. This product family offers a microcontroller-friendly solution for isolating low-voltage logic from high-voltage AC lines (120 VAC, 240 VAC, 380 VAC) and
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Optocoupler with GaAs Infrared Diode and Silicon Phototransistor VISHAY VOL617A-2X001T 4 Pin LSOP Package
Product OverviewThe VOL617A is an optocoupler featuring a GaAs infrared emitting diode coupled to a silicon planar phototransistor, housed in a 4-pin LSOP wide body package. It offers a high current transfer ratio, low coupling capacitance, and high isolation voltage, making it suitable for signal transmission between electrically separated circuits. Key advantages include a low profile, high collector-emitter voltage (VCEO = 80 V), and an isolation test voltage of 5000 VRMS.
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Phototransistor Output Optocoupler VISHAY SFH6156-4T with GaAs Infrared Diode and Silicon Planar Detector
Product OverviewThe Vishay Semiconductors SFH6156 is a high reliability optocoupler featuring a phototransistor output. It offers excellent CTR linearity, low coupling capacitance, and high isolation voltage (5300 VRMS). Designed for signal transmission between electrically separated circuits, it utilizes a GaAs infrared diode emitter optically coupled to a silicon planar phototransistor detector in a plastic SMD package. Key advantages include fast switching times and low
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