Military standard OPTEK 4N48 optically coupled isolator with high voltage isolation and robust design
Key Attributes
Model Number:
4N48
Product Custom Attributes
Rise Time:
20us
Output Current:
50mA
Fall Time:
20us
Operating Temperature:
-55℃~+125℃
Load Voltage:
40V
Load Type:
Phototransistor
Reverse Voltage:
2V
Current Transfer Ratio:
200%;1000%
Forward Current(If):
40mA
Input Type:
DC
Isolation Voltage(Vrms):
1kV
Pd - Power Dissipation:
300mW
Number Of Channels:
1
Mfr. Part #:
4N48
Package:
TO-78-6
Product Description
Hi-Reliability Optically Coupled Isolator
This series of isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for military and harsh environments, these devices provide high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. Devices with the suffix 'D' denote that the collector is electrically isolated from the case. Models 4N22, 4N23, 4N24, 4N48, and 4N49 are processed to MIL-STD-19500/486, while models 4N47, 4N48, and 4N49 are processed to MIL-STD-19500/548.
Product Attributes
- Brand: TT Electronics / Opto Technology
- Certifications: MIL-STD-19500/486, MIL-STD-19500/548
Technical Specifications
| Part Number | Isolation Voltage (kV) | CTR Min/Max | IF (mA) | VCE (Volts) | Max Processing |
| 4N22 or 4N22D | 1.0 | 10%/40% | 35 | 486 | MIL-STD-19500/486 |
| 4N23 or 4N23D | 2.0 | N/A | N/A | N/A | MIL-STD-19500/486 |
| 4N24 or 4N24D | 4.0 | N/A | N/A | N/A | MIL-STD-19500/486 |
| 4N47 or 4N47D | 5.0 | 1%/40% | 40 | 548 | MIL-STD-19500/548 |
| 4N48 or 4N48D | 10.0 | N/A | N/A | N/A | MIL-STD-19500/548 |
| 4N49 or 4N49D | 20.0 | N/A | N/A | N/A | MIL-STD-19500/548 |
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Input Diode Forward Voltage | VF | IF = 10.0 mA | 0.70 | 1.30 | V |
| VF | IF = 10.0 mA, TA = -55C | 1.20 | 1.50 | V | |
| VF | IF = 10.0 mA, TA = -100C | 1.30 | 1.70 | V | |
| Input Diode Reverse Current | IR | VR = 2.0 V | 100 | A | |
| Output Phototransistor Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 1.0 mA, IB = 0, IF = 0 | 35 | V | |
| V(BR)CEO | IC = 1.0 mA, IB = 0, IF = 0 | 40 | V | ||
| Output Phototransistor Collector-Base Breakdown Voltage | V(BR)CBO | IC = 100 A, IB = 0, IF = 0 | 35 | V | |
| V(BR)CBO | IC = 100 A, IB = 0, IF = 0 | 45 | V | ||
| Output Phototransistor Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 100 A, IC = 0, IF = 0 | 4 | V | |
| V(BR)EBO | IE = 100 A, IC = 0, IF = 0 | 7.0 | V | ||
| Collector-Emitter Dark Current | IO(OFF) | VCE = 20 V, IF = 0 | 100 | nA | |
| IO(OFF) | VCE = 20 V, IF = 0, TA = 100C | 100 | nA | ||
| Coupled On-State Collector Current | IC | IF = 2.0 mA, VS = 5 V, IO = 0 | 0.15 | mA | |
| IC | IF = 10.0 mA, VS = 5 V, IO = 0 | 1.00 | mA | ||
| IC | IF = 10.0 mA, VS = 5 V, IO = 0, TA = -55C | 1.00 | mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IF = 20 mA, IC = 2.5 mA, IO = 0 | 0.30 | V | |
| VCE(SAT) | IF = 20 mA, IC = 5.0 mA, IO = 0 | 0.30 | V | ||
| VCE(SAT) | IF = 20 mA, IC = 10.0 mA, IO = 0 | 0.30 | V | ||
| Current Transfer Ratio | CTR | VS = 5 V, IF = 10.0 mA, IO = 0 | 300 | % | |
| Isolation Resistance (Input-to-Output) | RIO | 1011 | |||
| Isolation Capacitance (Input-to-Output) | Cio | 5 | pF |
2411272151_OPTEK-4N48_C17483300.pdf
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