OPTEK JANTXV4N48 Optically Coupled Isolator Providing Electrical Isolation for Harsh and Dirty Environments
Key Attributes
Model Number:
JANTXV4N48
Product Custom Attributes
Rise Time:
20us
Output Current:
50mA
Fall Time:
20us
Vce Saturation(VCE(sat)):
300mV@20mA,2.5mA
Operating Temperature:
-55℃~+125℃
Load Voltage:
40V
Reverse Voltage:
2V
Current Transfer Ratio:
-;-
Forward Current(If):
40mA
Pd - Power Dissipation:
300mW
Number Of Channels:
-
Load Type:
Phototransistor
Input Type:
DC
Isolation Voltage(Vrms):
1kV
Mfr. Part #:
JANTXV4N48
Package:
TO-78-6
Product Description
Hi-Reliability Optically Coupled Isolator
This series of optically coupled isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for military and harsh environments, these devices offer high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. The suffix "S" denotes that the collector is electrically isolated from the case. Devices like the J/JD/JDS 4E22, 4E23, and 4E24 are processed to MIL-STD-19500/486 and are JANTX registered and JAN qualified.
Product Attributes
- Brand: ABB Electronics plc
- Certifications: JANTX registered, JAN qualified (for 4E series)
- Patent No.: 4124860
- Package: TO-78 hermetically sealed
Technical Specifications
| Part Number | Isolation Voltage (kV) | IF (mA) Typ/Max | VCE (Volts) Max | MIL-STD-19500 Processing |
| J4E22 / JD4E22 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| JDY4E22 / JDYS4E22 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| J4E23 / JD4E23 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| JDY4E23 / JDYS4E23 | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| J4E24 | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| JDY4E24 / JDYS4E24 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| Parameter | Symbol | Test Conditions | J/JD/JDS 4E22 | J/JD/JDS 4E23 | J/JD/JDS 4E24 | Units |
| Input Diode Forward Voltage | VF | IF = 10.0 mA | 1.50 - 1.70 | 1.50 - 1.70 | 1.50 - 1.70 | V |
| Input Diode Reverse Current | IR | VR = 2.0 V | 100 | 100 | 100 | nA |
| Output Phototransistor Breakdown Voltage Collector-Emitter | V(BR)CEO | IC = 1.0 mA, IF = 0 | 40 | 40 | 40 | V |
| Output Phototransistor Breakdown Voltage Collector-Base | V(BR)CBO | IC = 100 uA, IF = 0 | 45 | 45 | 45 | V |
| Output Phototransistor Breakdown Voltage Emitter-Base | V(BR)EBO | IE = 100 uA, IF = 0 | 7 | 7 | 7 | V |
| Collector-Emitter Dark Current | IO(OFF) | VCE = 20 V, IF = 0 | 100 | 100 | 100 | nA |
| Collector-Base Dark Current | IO(OFF) | VCE = 20 V, IF = 0 | 100 | 100 | 100 | nA |
| On-State Collector Current | IC(ON) | IF = 2.0 mA, VCE = 5 V | 1.00 | 2.50 | 4.00 | mA |
| Current Transfer Ratio | CTR | IF = 10.0 mA, VCE = 5 V | 100 | 100 | 100 | % |
| Isolation Resistance (Input-to-Output) | RIO | 10^11 | 10^11 | 10^11 | ||
| Isolation Capacitance (Input-to-Output) | CIO | f = 1.0 MHz | 5 | 5 | 5 | pF |
| Output Rise and Fall Time | tr, tf | IF = 10.0 mA, RL = 100 | 20.0 | 20.0 | 20.0 | s |
2411272144_OPTEK-JANTXV4N48_C17670562.pdf
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