880 nanometer wavelength optoisolator OPTEK 3N243 with NPN silicon phototransistor and infrared emitting diode
Key Attributes
Model Number:
3N243
Product Custom Attributes
Output Current:
30mA
Fall Time:
10us
Rise Time:
10us
Operating Temperature:
-55℃~+125℃
Load Voltage:
30V
Load Type:
Phototransistor
Current Transfer Ratio:
-;0.15%
Forward Current(If):
40mA
Input Type:
DC
Isolation Voltage(Vrms):
1kV
Pd - Power Dissipation:
200mW
Number Of Channels:
-
Mfr. Part #:
3N243
Package:
TO-72-4
Product Description
Product Description
This series of high-reliability optically coupled isolators consists of an infrared emitting diode and an NPN silicon phototransistor housed in a hermetically sealed TO-72 package. The 3C91C and 3C92C models operate at a 935 nm wavelength, while the 3N243, 3N244, 3N245, and 3N262 models operate at 880 nm. All devices feature 0.50" (12.70 mm) leads. TX variants are processed to OPTEK's military screening program, patterned after MIL-PRF-19500. These isolators provide high-voltage isolation, electrical isolation in challenging environments, and are suitable for industrial, medical, and office equipment.
Product Attributes
- Brand: TT electronics | OPTEK Technology
- Package: TO-72 hermetically sealed
- Certifications: TX devices processed to MIL-PRF-19500
Technical Specifications
| Part Number | LED Peak Wavelength | Sensor | Isolation Voltage (kVDC) | CTR Min / Max | IF (mA) Typ / Max | VCE (V) Typ / Max | Lead Length |
|---|---|---|---|---|---|---|---|
| 3C91C | 935 nm | Transistor | 1 | 0.3 / 2.0 | 10 / 50 | 10 / 50 | 0.50" |
| 3C92C (TX) | 935 nm | Transistor | 1 | 0.3 / 2.0 | 10 / 50 | 10 / 50 | 0.50" |
| 3N243 | 880 nm | Transistor | 1 | 0.15 / NA | 3 / 40 | 10 / 30 | 0.50" |
| 3N244 | 880 nm | Transistor | 1 | 0.3 / NA | 3 / 40 | 10 / 30 | 0.50" |
| 3N245 (TX) | 880 nm | Transistor | 1 | 0.6 / NA | 3 / 40 | 10 / 30 | 0.50" |
| 3N262 | 880 nm | Transistor | 1 | 1.0 / 5.0 | 1 / 40 | 5 / 30 | 0.50" |
2411272147_OPTEK-3N243_C17680459.pdf
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