optocoupler NQUNXIN QX6N137 CuH S with strobable outputs and compliance to UL 1577 safety certification
Key Attributes
Model Number:
QX6N137-CuH-S
Product Custom Attributes
Power Dissipation:
-
Load Voltage:
7V
Output Current:
8mA
Low Level Delay Time:
41ns
High Level Delay Time:
50ns
Reverse Voltage:
5V
Current Transfer Ratio:
-
Voltage - Forward(Vf):
1.33V
Voltage - Supply:
5.5V
Operating Temperature:
-40℃~+85℃
Forward Current(If):
50mA
CMTI(kV/us):
15kV/us
Number Of Channels:
1
Input Threshold Current:
3mA
Isolation Voltage(Vrms):
5kV
Input Type:
DC
Mfr. Part #:
QX6N137-CuH-S
Package:
SMD-8P
Product Description
Product Overview
The QX6N137 optocoupler features a high-speed integrated photo-detector logic gate coupled to an 850 nm AlGaAS LED, enabling rapid output. It offers a high bit rate of 10Mbit/s, high input-output isolation voltage (5000 Vrms), and operates within a wide temperature range of -40C to +85C. Designed with logic gate and strobable outputs, it meets reinforced insulation standards and is compliant with safety standards such as UL 1577, VDE DIN EN60747-5-5, and CQC11-471543-2022. Applications include ground loop elimination, LSTTL to TTL/5V CMOS conversion, line receivers, data transmission, switching power supplies, and computer peripheral interfaces.
Product Attributes
- Brand: Qunxin ()
- Origin: China
- Certifications: UL 1577, VDE DIN EN60747-5-5, CQC11-471543-2022
- Material: AlGaAS LED, integrated photo-detector logic gate
- Lead Frame: Copper (Cu)
- Epoxy Type: Halogen-free (H)
Technical Specifications
| Parameter | Symbol | Value | Unit | Remark |
| Insulation and Safety | ||||
| Creepage Distance | L | >7.0 | mm | Measured from input terminals to output terminals, shortest distance path along body |
| Clearance Distance | L | >7.0 | mm | Measured from input terminals to output terminals, shortest distance through air |
| Insulation Thickness | DTI | >0.4 | mm | Insulation thickness between emitter and detector |
| Peak Isolation Voltage | VIORM | 1500 | Vpeak | DIN/EN/IEC EN60747-5-5 |
| Transient isolation voltage | VIOTM | 7000 | Vpeak | DIN/EN/IEC EN60747-5-5 |
| Isolation Voltage | Viso | >5000 | Vrms | For 1 min |
| Absolute Maximum Ratings (TA=25) | ||||
| Forward Current | IF | 50 | mA | |
| Enable Input Voltage Not to Exceed VCC by more than | 500 | mV | ||
| Enable Input Voltage | VE | 5.5 | V | |
| Reverse Voltage | VR | 5 | V | |
| Input Power Dissipation | PI | 100 | mW | |
| Supply Voltage | VCC | 7 | V | |
| Output Current | IO | 50 | mA | |
| Output Voltage | VO | 7 | V | |
| Output Collector Power Dissipation | PO | 85 | mW | |
| Operating Temperature | Topr | -40 to +85 | ||
| Storage Temperature | Tstg | -55 to +125 | ||
| Soldering Temperature | Tsol | 260 | ||
| Recommended Operating Conditions | ||||
| Low Level Input Current | IFL | 0 to 250 | A | |
| High Level Input Current | IFH | 6.3 to 15 | mA | |
| Supply Voltage | VCC | 2.7 to 5.5 | V | |
| Low Level Enable Voltage | VEL | 0 to 0.8 | V | |
| High Level Enable Voltage | VEH | 2.0 to VCC | V | |
| Operating Temperature | TA | -40 to +85 | ||
| Output Pull-up Resistor | RL | 330 to 4k | ||
| Electro-optical Characteristics (TA=25) | ||||
| Input Forward Voltage | VF | - to 1.75 | V | IF=10mA |
| Input Reverse Breakdown Voltage | BVR | 5 | V | IR=10A |
| Input Capacitance | CIN | - to 70 | pF | V=0, f=1MHz |
| Input Diode Temperature Coefficient | VF/TA | - to -1.4 | mV/C | IF=10mA |
| High Level Supply Current | ICCH | - to 10 | mA | IF=0mA, VCC=5.5V, VE=0.5V |
| Low Level Supply Current | ICCL | - to 13 | mA | IF=10mA, VCC=5.5V |
| Low Level Enable Current | IEL | -1.6 to -0.8 | mA | VCC=5.5V, VE=0.5V |
| High Level Enable Current | IEH | -1.6 to -0.6 | mA | VCC=5.5V, VE=2.0V |
| High Level Enable Voltage | VEH | 2.0 to - | V | IF=10mA, VCC=5.5V |
| Low Level Enable Voltage | VEL | - to 0.8 | V | IF=10mA, VCC=5.5V |
| High Level Output Current | IOH | - to 100 | A | IF=250A, VCC=VO=5.5V, VE=2V |
| Low Level Output Voltage | VOL | - to 0.6 | V | IF=5mA, VCC=5.5V, IOL=13mA, VE=2V |
| Input Threshold Current | IFT | - to 5 | mA | VCC=5.5V, IOL=13mA, VO<0.6V, VE=2V |
| Isolation Voltage | VISO | 5000 | VRMS | RH<50%, II-O50A |
| Isolation Resistance | RI-O | 1012 | VI-O=500V | |
| Isolation Capacitance | CI-O | - to 0.6 | pF | V=0, f=1MHz |
| Switching Specification (TA=25) | ||||
| Propagation Delay Time to Output High Level | TPLH | 10 to 100 | ns | IF=7.5mA, VCC=5.0V, CL=15pF, RL=350 |
| Propagation Delay Time to Output Low Level | TPHL | 10 to 100 | ns | IF=7.5mA, VCC=5.0V, CL=15pF, RL=350 |
| Pulse Width Distortion | PWD | - to 35 | ns | (|TPHLTPLH|) |
| Output Rise Time (10% 90%) | tr | - to 30 | ns | |
| Output Rise Time (90% - 10%) | tf | - to 10 | ns | |
| Enable Propagation Delay Time to Output High Level | tELH | - to 15 | ns | IF=7.5mA, VCC=5.0V, VEH=3.5V, CL=15pF, RL=350 |
| Enable Propagation Delay Time to Output Low Level | tEHL | - to 40 | ns | IF=7.5mA, VCC=5.0V, VEH=3.5V, CL=15pF, RL=350 |
| Common Mode Transient Immunity (at Output High Level) | |CMH| | 5 to 10 | kV/s | IF=0mA, VCC=5V, |VCM|=50V(Peak), VO(MIN)=2.0V, RL=350 |
| Common Mode Transient Immunity (at Output Low Level) | |CML| | 5 to 10 | kV/s | IF=10mA, VCC=5V, |VCM|=50V(Peak), VO(MAX)=0.8V, RL=350 |
2512231546_NQUNXIN-QX6N137-CuH-S_C49023453.pdf
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