Microprocessor compatible photo coupler NQUNXIN QXH11L1-CuH-S with guaranteed on off threshold hysteresis

Key Attributes
Model Number: QXH11L1-CuH-S
Product Custom Attributes
Power Dissipation:
-
Load Voltage:
16V
Output Current:
50mA
Low Level Delay Time:
4ns
High Level Delay Time:
4ns
Reverse Voltage:
6V
Current Transfer Ratio:
-
Voltage - Forward(Vf):
1.24V
Voltage - Supply:
3V~15V
Forward Current(If):
20mA
Operating Temperature:
-55℃~+100℃
CMTI(kV/us):
-
Number Of Channels:
1
Input Threshold Current:
10mA
Isolation Voltage(Vrms):
5kV
Input Type:
DC
Mfr. Part #:
QXH11L1-CuH-S
Package:
SMD-6P
Product Description

Product Description

The QXH11LX series of devices features a GaAs infrared emitting diode optically coupled to a high-speed integrated circuit detector. The output detector incorporates a Schmitt trigger, providing hysteresis for noise immunity and pulse shaping. These high-speed photo couplers offer a typical data rate of 2MHz (NRZ), are free from latch-up and oscillation across voltage and temperature ranges, and are microprocessor compatible. They feature logic-compatible outputs that sink 16mA at 0.4V maximum, guaranteed on/off threshold hysteresis, and wide supply voltage capability compatible with popular logic systems. The operating temperature range is -55C to 100C. Applications include logic-to-logic isolation, programmable current level sensing, line receivers for noise and transient elimination, and AC to TTL conversion with square wave shaping.

Product Attributes

  • Brand: NINGBO QUNXIN MICROELECTRONICS CO., LTD. (Qunxin)
  • Origin: China
  • Certifications: UL 1577, VDE DIN EN60747-5-5 (VDE 0884-5), CQC11-471543-2022
  • Material: GaAs infrared emitting diode, high-speed integrated circuit detector
  • Package: Compact dual-in-line package (DIP6, DIP6-M, SMD6)

Technical Specifications

ParameterSymbolConditionMin.Typ.Max.UnitRemark
Insulation and Safety related specifications
Creepage DistanceL7.6mmMeasured from input terminals to output terminals, shortest distance path along body
Clearance DistanceL7.6mmMeasured from input terminals to output terminals, shortest distance through air
Insulation ThicknessDTI0.4mmInsulation thickness between emitter and detector
Peak Isolation VoltageVIORMDIN/EN/IEC EN60747-5-51500Vpeak
Transient isolation voltageVIOTMDIN/EN/IEC EN60747-5-57000Vpeak
Isolation VoltageVisoFor 1 min5000Vrms
Absolute Maximum Ratings (TA=25)
Forward CurrentIF20mAInput
Reverse VoltageVR6VInput
Power DissipationPD120mWInput
Operation Voltage RangeVCC316VOutput (VCC)
Output CurrentIO50mAOutput
Power DissipationPD150mWOutput
Total Power DissipationPtot250mW
Operating TemperatureTopr-55+100C
Storage TemperatureTstg-55+125C
Soldering TemperatureTsol260C
Electro-optical Characteristics (TA=25)
Forward VoltageVFIF=10mA1.241.5V
Reverse CurrentIRVR=5V10A
Input CapacitanceCINV=0, f=1MHz100pF
Supply CurrentICC(off)IF=0mA, VCC=5V0.621.5mAOutput
High Level Output CurrentIOHIF=0mA, VCC=VO=15V100AOutput
Supply CurrentICC(on)IF=10mA, VCC=5V0.671.5mATransfer Characteristics
Low Level Output VoltageVOLIF=IF(ON) max. VCC=5V, RL=2700.4VOutput
Turn-on Threshold CurrentIF(ON)QXH11L1, VCC=5V, RL=2701.6mATransfer Characteristics
Turn-on Threshold CurrentIF(ON)QXH11L2, VCC=5V, RL=27010mATransfer Characteristics
Turn-on Threshold CurrentIF(ON)QXH11L3, VCC=5V, RL=2705mATransfer Characteristics
Hysteresis RatioIF(OFF) /IF(ON)0.50.9
Turn-on TimetonVCC=5V, IF=IF(ON) max. RL=2704sSwitching Time
Fall Timetf0.1sSwitching Time
Turn-off Timetoff4sSwitching Time
Rise Timetr0.1sSwitching Time
Data Rate2MHz
Isolation ResistanceRISOVI-O=500V1011

2512231546_NQUNXIN-QXH11L1-CuH-S_C49023650.pdf

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