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quality Optocoupler with 850 nm AlGaAs LED featuring NQUNXIN QX6N130-CuH-S high speed photo detector logic gate factory
quality Optocoupler with 850 nm AlGaAs LED featuring NQUNXIN QX6N130-CuH-S high speed photo detector logic gate factory

Optocoupler with 850 nm AlGaAs LED featuring NQUNXIN QX6N130-CuH-S high speed photo detector logic gate

Key Attributes
Model Number: QX6N130-CuH-S
Product Custom Attributes
Mfr. Part #:
QX6N130-CuH-S
Package:
SMD-8P
Product Description

Product Overview

The QX6N130 optocoupler features an 850 nm AlGaAS LED optically coupled to a very high-speed integrated photo-detector logic gate with a strobable output. It offers a high bit rate of 1Mbit/s, high input-output isolation voltage (5000 Vrms), and a wide operating temperature range (-40C to +125C). This device is suitable for applications such as ground loop elimination, LSTTL to TTL/CMOS conversion, line receivers, data transmission, switching power supplies, and computer peripheral interfaces. It meets reinforced insulation standards and safety certifications including UL 1577, VDE DIN EN60747-5-5, and CQC11-471543-2022.

Product Attributes

  • Brand: QUNXIN ()
  • Origin: China
  • Certifications: UL 1577, VDE DIN EN60747-5-5 (VDE 0884-5), CQC11-471543-2022
  • Lead Frame Material: Copper (Cu)
  • Epoxy Type: Halogen-free (H)

Technical Specifications

ParameterSymbolConditionMin.Typ.Max.UnitRemark
Insulation and Safety related specifications
Creepage DistanceL>7.0mmMeasured from input terminals to output terminals, shortest distance path along body
Clearance DistanceL>7.0mmMeasured from input terminals to output terminals, shortest distance through air
Insulation ThicknessDTI>0.4mmInsulation thickness between emitter and detector
Peak Isolation VoltageVIORMDIN/EN/IEC EN60747-5-51500Vpeak
Transient isolation voltageVIOTMDIN/EN/IEC EN60747-5-57000Vpeak
Isolation VoltageVisoFor 1 min>5000Vrms
Absolute Maximum Ratings (TA=25)
Forward CurrentIF50mAInput
Reverse VoltageVR5VInput
Input Power DissipationPI100mWInput
Supply VoltageVCC6.5VOutput
Output CurrentIO10mAOutput
Output VoltageVO-0.5to VCC+0.5VOutput
Output Collector Power DissipationPO70mWOutput
Operating TemperatureTopr-40to +125
Storage TemperatureTstg-55to +125
Soldering TemperatureTsol260
Electro-optical Characteristics (TA=25)
Input Forward VoltageVFIF=10mA1.381.75V
Input Reverse Breakdown VoltageBVRIR=10A550V
Input CapacitanceCINV=0, f=1MHz70pF
Input Diode Temperature CoefficientVF/TAIF=10mA-1.4mV/C
High Level Supply CurrentICCHIF=0mA, VCC=5.5V, VO=Open0.61.3mAOutput
Low Level Supply CurrentICCLIF=10mA, VCC=5.5V, VO=Open0.621.3mAOutput
High Level Output CurrentIOHIF=250A VCC=VO=5.5V100AOutput
Low Level Output VoltageVOLIF=5mA VCC=5.5V IOL=13mA0.160.6VOutput
Input Threshold CurrentIFTVCC=5.5V IOL=13mA VO<0.6V2.75mA
Isolation VoltageVISORH<50% II-O50A5000VRMS
Isolation ResistanceRI-OVI-O=500V1012
Isolation CapacitanceCI-OV=0, f=1MHz0.6pF
Switching Specification (TA=25)
Propagation Delay Time to Output High LevelTPLHIF=7.5mA VCC=5.0V CL=15pF RL=3503005401000ns
Propagation Delay Time to Output Low LevelTPHLIF=7.5mA VCC=5.0V CL=15pF RL=35070150300ns
Pulse Width Distortion (|TPHLTPLH|)PWD400700ns
Output Rise Time (10% 90%)trIF=7.5mA VCC=5.0V CL=15pF RL=35030ns
Output Fall Time (90% - 10%)tfIF=7.5mA VCC=5.0V CL=15pF RL=35010ns
Common Mode Transient Immunity (at Output High Level)|CMH|IF=0mA, VCC=5V |VCM|=50V(Peak) VO(MIN)=2.0V, RL=350510kV/s
Common Mode Transient Immunity (at Output Low Level)|CML|IF=10mA, VCC=5V |VCM|=50V(Peak) VO(MAX)=0.8V, RL=350510kV/s

2510232000_NQUNXIN-QX6N130-CuH-S_C52164457.pdf

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