Isolated gate driver NOVOSENSE NSi6601B-DSPR featuring 3000VRMS isolation and 150kVus CMTI immunity
Product Overview
The NSi6601 is a single-channel isolated gate driver designed for driving IGBTs, power MOSFETs, and SiC MOSFETs. It features split outputs for individual control of rise and fall times, capable of sourcing and sinking 5A peak current. Available in SOP8(150 mil) or SOP8(300 mil) packages, it supports 3000VRMS or 5700VRMS isolation per UL1577 and offers 150kV/us minimum common-mode transient immunity (CMTI). The device operates with a maximum supply voltage of 32V on the driver side and accepts 3.1V to 17V on the input side, with under-voltage lock-out (UVLO) protection on all power supply pins. Its high driving current, robustness, wide supply voltage range, and fast signal propagation make it suitable for high reliability, power density, and efficiency switching power systems.
Product Attributes
- Brand: NOVOSENSE
- Certifications: UL recognition, DIN VDE V 0884-11, CSA component notice 5A, CQC certification
- Compliance: RoHS-compliant
- Options: AEC-Q100 Grade1 option
Technical Specifications
| Part Number | UVLO Level | Package | Peak Output Current | CMTI | Propagation Delay (Typ) | Input Supply Voltage | Driver Supply Voltage | Operating Ambient Temperature | Isolation (UL1577) |
| NSi6601B-DSPR | 9V | SOP8 (150 mil) | 5A | 150kV/us | 78ns | 3.1V to 17V | Up to 32V | -40C ~125C | 3000VRMS |
| NSi6601C-DSPR | 13V | SOP8 (150 mil) | 5A | 150kV/us | 78ns | 3.1V to 17V | Up to 32V | -40C ~125C | 3000VRMS |
| NSi6601C-DSWVR | 13V | SOP8 (300 mil) | 5A | 150kV/us | 78ns | 3.1V to 17V | Up to 32V | -40C ~125C | 5700VRMS |
| NSi6601B-DSWVR | 9V | SOP8 (300 mil) | 5A | 150kV/us | 78ns | 3.1V to 17V | Up to 32V | -40C ~125C | 5700VRMS |
2410122007_NOVOSENSE-NSi6601B-DSPR_C5307513.pdf
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