High reliability isolated gate driver IC NOVOSENSE NSi6602B-DSWR with programmable deadtime and CMTI
Product Overview
The NSI6602 is a family of high-reliability isolated dual-channel gate driver ICs designed for power transistor driving up to 2MHz switching frequency. Each output can source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching. The NSI6602 offers robust isolation, with 2500Vrms per UL1577 in a 5x5mm LGA13 package, 3000Vrms in a SOIC-16 narrow package, and 5700Vrms in SOIC-16 or SOIC-14 wide packages. It features 150kV/us typical common-mode transient immunity (CMTI) for system robustness. The driver operates with a maximum supply voltage of 28V, while the input side accepts 2.7V to 5V supply voltage. Under-voltage lock-out (UVLO) protection is supported across all power supply voltage pins. These features make the NSI6602 suitable for high-reliability, power density, and efficiency switching power systems.
Key Features
- Isolated dual channel driver
- Input side supply voltage: 2.7V to 5.5V
- Driver side supply voltage: up to 25V with UVLO
- 4A peak source and 6A peak sink output
- High CMTI: 150kV/us typical
- 25ns typical propagation delay
- 5ns maximum delay matching
- 6ns maximum pulse width distortion
- Programmable deadtime
- Accepts minimum input pulse width 20ns
- Operation temperature: -40~125
Product Attributes
- Brand: NOVOSENSE
- Certifications: UL recognition (LGA13: 2500Vrms, SOP16/SOP14(300mil): 5700Vrms, SOP16(150mil): 3000Vrms per UL1577), DIN VDE V 0884-11:2017-01, CSA component notice 5A, CQC certification per GB4943.1-2011
Applications
- Isolated DC-DC and AC-to-DC power supplies in server, telecom, and industry
- DC-to-AC solar inverters
- Motor drives and EV charging
- UPS and battery chargers
Technical Specifications
| Parameter | Symbol | Min | Max | Unit | Comments |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Input Side Supply Voltage | VDDI to GNDI | -0.3 | 6 | V | |
| Output Side Supply Voltage | VDDA to GNDA, VDDB to GNDB | -0.3 | 30 | V | |
| Input Signal Voltage | INA, INB, DIS, DT to GNDI | -0.3 | VVDDI+0.3 | V | |
| Input Signal Voltage (Transient for 50ns) | INA, INB, DIS, DT to GNDI | -5 | VVDDI+0.3 | V | |
| Output Signal Voltage | OUTA to GNDA, OUTB to GNDB | -0.3 | VVDDA+0.3 / VVDDB+0.3 | V | |
| Output Signal Voltage (Transient for 200ns) | OUTA to GNDA, OUTB to GNDB | -2 | VVDDA+0.3 / VVDDB+0.3 | V | |
| Channel A to Channel B Voltage (LGA13) | GNDA to GNDB | 700 | V | ||
| Channel A to Channel B Voltage (SOP16&SOW16) | GNDA to GNDB | 1500 | V | ||
| Channel A to Channel B Voltage (SOW14) | GNDA to GNDB | 1850 | V | ||
| Junction Temperature | TJ | -40 | 150 | ||
| Storage Temperature | Tstg | -65 | 150 | ||
| Electrostatic Discharge (HBM) | -4000 | 4000 | V | all pins | |
| Electrostatic Discharge (CDM) | -1500 | 1500 | V | ||
| Recommended Operating Conditions | |||||
| Input Side Supply Voltage | VDDI to GNDI | 3 | 5.5 | V | |
| Driver Side Supply Voltage | VDDA to GNDA, VDDB to GNDB | 7 | 25 | V | |
| Input Signal Voltage | INA, INB, DIS, DT | 0 | VVDDI | V | |
| Junction Temperature | TJ | -40 | 150 | ||
| Ambient Temperature | Ta | -40 | 125 | ||
| Thermal Information | |||||
| Junction-to-ambient thermal resistance | RJA | 209.5 (LGA13) / 97.0 (SOW16/SOW14) / 150.5 (SOP16) | /W | 1) Standard JESD51-3 | |
| Junction-to-case(top) thermal resistance | RJCtop | 48.4 (LGA13) / 23.3 (SOW16/SOW14) / 21.2 (SOP16) | /W | 2) | |
| Junction-to-top characterization parameter | JT | 41.8 (LGA13) / 35.8 (SOW16/SOW14) / 52.3 (SOP16) | /W | 3) | |
| Junction-to-board characterization parameter | JB | 31.9 (LGA13) / 39.0 (SOW16/SOW14) / 55.6 (SOP16) | /W | 3) | |
2410010403_NOVOSENSE-NSi6602B-DSWR_C2891997.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
