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quality NOVOSENSE NSI6602C DSWR Dual Channel Gate Driver IC Featuring 5700Vrms Isolation and UVLO Protection factory
quality NOVOSENSE NSI6602C DSWR Dual Channel Gate Driver IC Featuring 5700Vrms Isolation and UVLO Protection factory

NOVOSENSE NSI6602C DSWR Dual Channel Gate Driver IC Featuring 5700Vrms Isolation and UVLO Protection

Key Attributes
Model Number: NSI6602C-DSWR
Product Custom Attributes
Operating Temperature:
-40℃~+125℃@(Ta)
Isolation Voltage(Vrms):
5700
Current - Output High(IOH):
4A
Rise Time:
7ns
Voltage - Supply:
14.2V~25V;3V~5.5V
Quiescent Current(Iq):
750uA
Fall Time:
6ns
CMTI(kV/us):
150kV/us
Number Of Channels:
2
Current - Output Low(IOL):
6A
Mfr. Part #:
NSI6602C-DSWR
Package:
SOP-16-300mil
Product Description

Product Overview

The NSi6602 is a family of high-reliability isolated dual-channel gate driver ICs designed for power transistor driving up to 2MHz switching frequency. Each output can source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching. The NSi6602 offers various isolation levels: 2500Vrms in a 5mm x 5mm LGA13 package, 3000Vrms in a SOP16 (150mil) package, and 5700Vrms in SOP16 (300mil) or SOP14 (300mil) packages. It provides 150kV/us typical common-mode transient immunity (CMTI) for system robustness. The driver operates with a maximum supply voltage of 25V on the output side and accepts 2.7V to 5V on the input side. Under-voltage lock-out (UVLO) protection is supported on all power supply voltage pins.

Product Attributes

  • Brand: NOVOSENSE
  • Certifications: UL recognition (LGA13: 2500Vrms, SOP16/SOP14(300mil): 5700Vrms, SOP16(150mil): 3000Vrms per UL1577), DIN VDE V 0884-11:2017-01, CSA component notice 5A, CQC certification per GB4943.1-2011

Technical Specifications

ParameterMinMaxUnit
Electrical Characteristics
Input Side Supply Voltage (VDDI to GNDI)35.5V
Driver Side Supply Voltage (VDDA/VDDB to GNDA/GNDB) (NSi6602A)725V
Driver Side Supply Voltage (VDDA/VDDB to GNDA/GNDB) (NSi6602B)9.425V
Driver Side Supply Voltage (VDDA/VDDB to GNDA/GNDB) (NSi6602C)14.225V
Input Signal Voltage (INA, INB, DIS, DT to GNDI)0VDDIV
Ambient Temperature (Ta)-40125C
Switching Characteristics
Peak Source Current4A
Peak Sink Current6A
Typical Propagation Delay25ns
Maximum Delay Matching5ns
Maximum Pulse Width Distortion6ns
Minimum Input Pulse Width15ns
Typical Common-Mode Transient Immunity (CMTI)±150kV/us
Isolation Ratings
LGA13 Package (per UL1577)2500Vrms
SOP16 (150mil) Package (per UL1577)3000Vrms
SOP16 (300mil) / SOP14 (300mil) Package (per UL1577)5700Vrms

2410121617_NOVOSENSE-NSI6602C-DSWR_C5439813.pdf

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