Digital isolator with 5 kilovolt insulation and consumption NOVOSENSE NSI8121N1 dual channel solution

Key Attributes
Model Number: NSI8121N1
Product Custom Attributes
CMTI(kV/us):
150kV/us
Voltage - Supply:
2.5V~5.5V;2.5V~5.5V
Propagation Delay(tpd):
9ns
Default Output:
High Level
Number Of Forward Channels:
1
Number Of Reverse Channels:
1
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
NSI8121N1
Package:
SOIC-8
Product Description

Product Overview

The NSi812x devices are high reliability dual-channel digital isolators offering safety certification (UL1577) with high insulation withstand voltages (3.75kVrms, 5kVrms). They provide excellent electromagnetic immunity, low emissions, and low power consumption. With data rates up to 150Mbps and common-mode transient immunity (CMTI) up to 150kV/us, these isolators ensure reliable operation. Features include configurable digital channel direction and default output levels upon power loss. The wide supply voltage range allows for direct connection to most digital interfaces, simplifying level shifting and enhancing system-level EMC performance for increased reliability and stability. An AEC-Q100 (Grade 1) option is available for 3.75kV parts.

Product Attributes

  • Brand: Novosense
  • Certifications: UL1577, CQC (GB4943.1-2011), CSA (5A), IEC60950-1, DIN VDE V 0884-10
  • AEC-Q100 Grade 1 available for 3.75kV parts (SOIC-8)
  • RoHS-compliant packages: SOIC-8 narrow body, SOIC-16 wide body

Technical Specifications

ParameterSymbolMinTypMaxUnitComments
Absolute Maximum Ratings
Power Supply VoltageVDD1, VDD2-0.56.5V
Maximum Input VoltageVINA, VINB-0.4VDD+0.4V
Common-Mode TransientsCMTI-150150kV/us
Output CurrentIo-1515mA
Maximum Surge Isolation VoltageVIOSM10kV
Operating TemperatureTopr-40125
Storage TemperatureTstg-40150
Electrostatic Discharge (HBM)6000V
Electrostatic Discharge (CDM)2000V
Electrical Characteristics (VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-40 to 125. Typical values at VDD1=5V, VDD2=5V, Ta=25)
Power on ResetVDDPOR2.2VPOR threshold during power-up
POR Threshold HysteresisVDD HYS0.1V
Input Threshold VoltageVIT1.6V
Input Threshold HysteresisVIT_HYS0.4V
High Level Input VoltageVIH2V
Low Level Input VoltageVIL0.8V
High Level Output VoltageVOHVDD-0.2VIOH 4mA
Low Level Output VoltageVOL0.2VIOL 4mA
Output ImpedanceRout50ohm
Start Up Time after PORtrbs3usec
Common Mode Transient ImmunityCMTI100150kV/us
Supply Current (VDD1=5V10%, VDD2=5V10%, Ta=-40 to 125. Typical values at VDD1=5V, VDD2=5V, Ta=25)
NSi8120 Supply Current (All Input 0V)IDD1(Q0)0.58mA
NSi8120 Supply Current (All Input 0V)IDD2(Q0)1.18mA
NSi8120 Supply Current (All Input at supply)IDD1(Q1)2.92mA
NSi8120 Supply Current (All Input at supply)IDD2(Q1)1.24mA
NSi8120 Supply Current (1Mbps, CL=15pF)IDD1(1M)1.71mA
NSi8120 Supply Current (1Mbps, CL=15pF)IDD2(1M)1.38mA
NSi8121/NSi8122 Supply Current (1Mbps, CL=15pF)IDD1(1M)1.72mA
NSi8121/NSi8122 Supply Current (1Mbps, CL=15pF)IDD2(1M)1.68mA
NSi8120 Supply Current (100Mbps, CL=15pF)IDD1(100M)2.10mA
NSi8120 Supply Current (100Mbps, CL=15pF)IDD2(100M)21.0mA
NSi8121/NSi8122 Supply Current (100Mbps, CL=15pF)IDD1(100M)11.01mA
NSi8121/NSi8122 Supply Current (100Mbps, CL=15pF)IDD2(100M)12.8mA
Data Rate and Timing
Data RateDR0150Mbps
Minimum Pulse WidthPW5.0ns
Propagation Delay (typ)tPLH, tPHL9.0ns
Pulse Width DistortionPWD5.0ns|t PHL t PLH |
Rising Timetr5.0nsCL = 15pF
Falling Timetf5.0nsCL = 15pF
Peak Eye Diagram JittertJIT(PK)350ps
Channel-to-Channel Delay SkewtSK(c2c)2.5ns
Part-to-Part Delay SkewtSK(p2p)5.0ns
Supply Current (VDD1=2.5V10%, VDD2=2.5V10%, Ta=-40 to 125. Typical values at VDD1=2.5V, VDD2=2.5V, Ta=25)
NSi8120 Supply Current (100Mbps, CL=15pF)IDD1(100M)1.95mA
NSi8120 Supply Current (100Mbps, CL=15pF)IDD2(100M)10.4mA
NSi8121/NSi8122 Supply Current (100Mbps, CL=15pF)IDD1(100M)6.03mA
NSi8121/NSi8122 Supply Current (100Mbps, CL=15pF)IDD2(100M)6mA
Data Rate and Timing (VDD1=2.5V, VDD2=2.5V)
Propagation Delay (typ)tPLH, tPHL10ns
Rising Timetr5.0nsCL = 15pF

2410121608_NOVOSENSE-NSI8121N1_C399510.pdf

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