High reliability isolator NOVOSENSE NSI8100N supporting wide supply voltage and enhanced EMC performance
Key Attributes
Model Number:
NSI8100N
Product Custom Attributes
Isolation Voltage(Vrms):
3750
CMTI(kV/us):
150kV/us
Clock Direction:
Bidirectional
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
NSI8100N
Package:
SOIC-8
Product Description
Product Overview
The NSi810x devices are high-reliability bidirectional isolators compatible with the I2C interface. AEC-Q100 qualified and safety certified by UL1577, these isolators support various insulation withstand voltages (3.75kVrms, 5kVrms) while offering high electromagnetic immunity, low emissions, and low power consumption. They feature an I2C clock rate of up to 2MHz and a common-mode transient immunity (CMTI) of up to 150kV/us. The wide supply voltage range allows direct connection to most digital interfaces, facilitating level shifting and enhancing system-level EMC performance for increased reliability and stability.
Key Features
- Up to 5000VRMS Insulation voltage
- I2C Clock rate: up to 2MHz
- Power supply voltage: 2.5V to 5.5V
- AEC-Q100 Grade 1 qualified
- Suitable for hot swap applications
- High CMTI: 150kV/us
- Chip level ESD: HBM: 6kV
- High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity
- Isolation Barrier Life: >60 years
- Operation temperature: -40~125
- RoHS-compliant packages: SOIC-8 narrow body, SOIC-16 wide body
Safety Regulatory Approvals (pending)
- UL recognition: up to 5000VRMS for 1 minute per UL1577
- CQC certification per GB4943.1-2011
- CSA component notice 5A approval IEC60950-1 standard
- DIN V VDE V 0884-10(VDE V 0884-10): 2006-12
Applications
- Power over Ethernet
- Isolated I2C, SMBus, or PMBus interface
- I2C level shifting
- Battery Management
Technical Specifications
| Parameter | Symbol | NSi8100/NSi8101 | Unit | Conditions |
| Absolute Maximum Ratings | ||||
| Power Supply Voltage | VDD1, VDD2 | -0.5 to 6.5 | V | Maximum voltage must not exceed 6.5V. |
| Maximum Input Voltage | SDA1, SDA2, SCL1, SCL2 | -0.4 to VDD+0.41 | V | |
| Maximum Input Pulse Voltage | SDA1, SDA2, SCL1, SCL2 | -0.8 to VDD+0.8 | V | Pulse width < 100ns, duty cycle < 10% |
| Common-Mode Transients | CMTI | ±150 | kV/us | |
| Output Current | Io | -15 to 15 | mA | |
| Maximum Surge Isolation Voltage | VIOSM | 5.3 | kV | |
| Operating Temperature | Topr | -40 to 125 | ||
| Storage Temperature | Tstg | -40 to 150 | ||
| Electrostatic Discharge (HBM) | ±6000 | V | ||
| Electrostatic Discharge (CDM) | ±2000 | V | ||
| Electrical Characteristics | ||||
| Power on Reset Threshold | VDDPOR | 2.2 | V | During power-up |
| POR Threshold Hysteresis | VDD HYS | 0.1 | V | |
| Start Up Time after POR | trbs | 40 | µsec | |
| Common Mode Transient Immunity | CMTI | ±100 to ±150 | kV/us | |
| Side 1 Logic Level Input Threshold (Low) | VILT1 | 400 | mV | |
| Side 1 Input Threshold at rising edge | VIHT1 | 600 | mV | |
| Side 1 Input Threshold Hysteresis | VIT_HYS1 | 100 | mV | |
| Side 1 Low Level Output Voltage | VOL1 | 650 to 800 | mV | IOL ≤ 4mA |
| Side 1 Low-level output voltage to high-level input voltage difference | ΔVOIT1 | 70 | mV | |
| Side 2 Logic Level Input Threshold (Low) | VILT2 | 1.6 | V | |
| Side 2 Input Threshold at rising edge | VIT_HYS2 | 0.4 | V | |
| Side 2 High Level Input Voltage | VIH2 | 2.0 | V | |
| Side 2 Low Level Input Voltage | VIL2 | 0.8 | V | |
| Side 2 Low Level Output Voltage | VOL | 0.5 | V | IOL ≤ 30mA |
| Supply Current (mA) | VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-40 to 125. Typical values at VDD1=5V, VDD2=5V, Ta=25 | |||
| NSi8100 IDD1(Q0) | 5.10 to 7.5 | mA | All Input 0V | |
| NSi8100 IDD2(Q0) | 3.96 to 5.7 | mA | All Input 0V | |
| NSi8100 IDD1(Q1) | 2.52 to 3.6 | mA | All Input at supply | |
| NSi8100 IDD2(Q1) | 1.78 to 2.5 | mA | All Input at supply | |
| NSi8100 IDD1(2M) | 3.83 to 5.7 | mA | 2MHz, CL=15pF | |
| NSi8100 IDD2(2M) | 2.78 to 4.2 | mA | 2MHz, CL=15pF | |
| NSi8101 IDD1(Q0) | 2.85 to 4.2 | mA | All Input 0V | |
| NSi8101 IDD2(Q0) | 2.66 to 4 | mA | All Input 0V | |
| NSi8101 IDD1(Q1) | 2.42 to 3.6 | mA | All Input at supply | |
| NSi8101 IDD2(Q1) | 1.57 to 2.4 | mA | All Input at supply | |
| NSi8101 IDD1(2M) | 2.89 to 4.3 | mA | 2MHz, CL=15pF | |
| NSi8101 IDD2(2M) | 2.64 to 4 | mA | 2MHz, CL=15pF | |
| Clock Rate | DR | 0 to 2 | MHz | |
| Propagation Delay (ns) | See figure 2.6, R1=1500Ω, R2=500Ω, NO LOAD | |||
| tPLH12 | 24.8 to 37.2 (5V) / 29 to 43.5 (3.3V) / 33 to 49.5 (2.5V) | ns | ||
| tPHL12 | 32.8 to 49.2 (5V) / 39.8 to 59.7 (3.3V) / 52 to 78 (2.5V) | ns | ||
| tPLH21 | 24 to 36 (5V) / 30 to 45 (3.3V) / 47 to 70.5 (2.5V) | ns | ||
| tPHL21 | 38 to 57 (5V) / 61 to 91.5 (3.3V) / 100 to 150 (2.5V) | ns | ||
| Pulse Width Distortion (ns) | ||||
| PWD12 | 8 to 12 (5V) / 10.8 to 16.2 (3.3V) / 19 to 28.5 (2.5V) | ns | |tPHL12 tPLH12| | |
| PWD21 | 14 to 21 (5V) / 31 to 46.5 (3.3V) / 53 to 79.5 (2.5V) | ns | |tPHL21 tPLH21| | |
| Falling Time (ns) | ||||
| tf1 | 10.6 to 15.9 (CL=30pF) / 15.6 to 23.4 (CL=30pF) / 22 to 33 (CL=30pF) | ns | ||
| tf2 | 22.8 to 34.2 (CL=300pF) / 32 to 48 (CL=300pF) / 36 to 54 (CL=300pF) | ns | ||
2410121618_NOVOSENSE-NSI8100N_C399511.pdf
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