High reliability digital isolator NOVOSENSE NSI8120N0 with consumption and excellent EMC performance
Key Attributes
Model Number:
NSI8120N0
Product Custom Attributes
CMTI(kV/us):
150kV/us
Voltage - Supply:
2.5V~5.5V;2.5V~5.5V
Propagation Delay(tpd):
9ns
Default Output:
Low Level
Number Of Forward Channels:
2
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
NSI8120N0
Package:
SOIC-8
Product Description
Product Overview
The NSi812x devices are high-reliability dual-channel digital isolators offering robust insulation withstand voltages (up to 5kVrms), superior electromagnetic immunity, and low power consumption. They support data rates up to 150Mbps with excellent common-mode transient immunity (CMTI) of 150kV/s. These isolators feature configurable digital channel direction and default output levels during power loss, simplifying level shifting with a wide supply voltage range. Enhanced system-level EMC performance ensures reliability and stability. An AEC-Q100 (Grade 1) option is available for 3.75kV parts.
Product Attributes
- Brand: Novosense
- Certifications: UL1577, CQC, CSA, DIN VDE V 0884-10 (pending)
- AEC-Q100 Grade 1 available for 3.75kV parts
- RoHS-compliant packages: SOIC-8 narrow body, SOIC-16 wide body
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Comments |
| Absolute Maximum Ratings | ||||||
| Power Supply Voltage | VDD1, VDD2 | -0.5 | 6.5 | V | ||
| Common-Mode Transients | CMTI | -150 | 150 | kV/us | ||
| Operating Temperature | Topr | -40 | 125 | |||
| Storage Temperature | Tstg | -40 | 150 | |||
| Electrostatic Discharge (HBM) | 6000 | V | ||||
| Electrical Characteristics (VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-40 to 125) | ||||||
| Power on Reset | VDDPOR | 2.2 | V | POR threshold as during power-up | ||
| Input Threshold Voltage | VIT | 1.6 | V | |||
| High Level Input Voltage | VIH | 2 | V | |||
| Low Level Input Voltage | VIL | 0.8 | V | |||
| High Level Output Voltage | VOH | VDD- 0.2 | V | IOH 4mA | ||
| Low Level Output Voltage | VOL | 0.2 | V | IOL 4mA | ||
| Start Up Time after POR | trbs | 3 | usec | |||
| Common Mode Transient Immunity | CMTI | 100 | 150 | kV/us | ||
| Data Rate | DR | 0 | 150 | Mbps | ||
| Minimum Pulse Width | PW | 5.0 | ns | |||
| Propagation Delay (typ) | tPLH, tPHL | 9.0 | 10 | ns | CL=15pF | |
| Pulse Width Distortion | PWD | 5.0 | ns | |t PHL t PLH | | ||
| Rising Time | tr | 5.0 | ns | CL = 15pF | ||
| Falling Time | tf | 5.0 | ns | CL = 15pF | ||
| Peak Eye Diagram Jitter | tJIT(PK) | 350 | ps | |||
| Channel-to-Channel Delay Skew | tSK(c2c) | 2.5 | ns | |||
| Part-to-Part Delay Skew | tSK(p2p) | 5.0 | ns | |||
| Supply Current (Typ. at VDD=5V, Ta=25) | ||||||
| Device | Parameter | Condition | Typ | Unit | ||
| NSi8120 | IDD1(Q0) | All Input 0V | 0.58 | mA | ||
| NSi8120 | IDD2(Q0) | All Input 0V | 1.18 | mA | ||
| NSi8120 | IDD1(1M) | 1Mbps, CL=15pF | 1.71 | mA | ||
| NSi8120 | IDD2(1M) | 1Mbps, CL=15pF | 1.38 | mA | ||
| NSi8121/NSi8122 | IDD1(Q0) | All Input 0V | 1.03 | mA | ||
| NSi8121/NSi8122 | IDD2(Q0) | All Input 0V | 1.00 | mA | ||
| NSi8121/NSi8122 | IDD1(1M) | 1Mbps, CL=15pF | 1.72 | mA | ||
| NSi8121/NSi8122 | IDD2(1M) | 1Mbps, CL=15pF | 1.68 | mA | ||
2410121608_NOVOSENSE-NSI8120N0_C399512.pdf
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