signal isolation MSKSEMI PC817C-MS photocoupler with GaAs infrared diode and NPN phototransistor
Key Attributes
Model Number:
PC817C-MS
Product Custom Attributes
Rise Time:
6us
Fall Time:
5us
Output Current:
50mA
Vce Saturation(VCE(sat)):
100mV@20mA,1mA
Operating Temperature:
-55℃~+110℃
Load Voltage:
35V
Reverse Voltage:
6V
Load Type:
Phototransistor
Current Transfer Ratio:
600%;50%
Forward Current(If):
50mA
Isolation Voltage(Vrms):
5kV
Number Of Channels:
1
Mfr. Part #:
PC817C-MS
Package:
DIP-4
Product Description
Product Overview
The PC817x-MS is a series of high-reliability photocouplers designed for various industrial applications. It features a GaAs infrared emitting diode and an NPN silicon phototransistor, offering a minimum CTR of 50% under specified conditions. With an insulation voltage of 5,000Vrms and fast response times (typ. 6s rise, 5s fall), it is suitable for signal transmission and isolation in power supplies, meters, computers, and appliances. The series includes different CTR grades (A, B, C, D) to meet specific performance requirements.
Product Attributes
- Brand: Msksemi
- Series: PC817x-MS
- Construction: GaAs infrared emitting diode and NPN silicon phototransistor
- Packaging Options: DIP-4, SOP-4
- ESD Protection: HBM 8000V & MM 2000V
Technical Specifications
| Parameter | Symbol | Condition | Min. | Medium | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Absolute Ratings (Ta=25) | ||||||
| Forward Current | IF | 50 | mA | |||
| Reverse Voltage | VR | 6 | V | |||
| Consume Power (Input) | P | 70 | mW | |||
| Collector and Emitter Voltage | VCEO | 35 | V | |||
| Emitter and Collector Voltage | VECO | 6 | ||||
| Collector Current | IC | 50 | mA | |||
| Consume Power (Output) | PC | 150 | mW | |||
| Total Consume Power | Ptot | 200 | mW | |||
| Insulation Voltage | Viso | AC Test, 1 minute, humidity = 40~60% | 5,000 | Vrms | ||
| Max Insulation Voltage | VIOTM | 6,000 | V | |||
| Rated Impulse Insulation Voltage | VIORM | 630 | V | |||
| Working Temperature | Topr | -55 | 110 | |||
| Storage Temperature | Tstg | -55 | 125 | |||
| Soldering Temperature | Tsol | Soldering time is 10 seconds | 260 | |||
| Optoelectronic Characteristics (Ta=25) | ||||||
| Forward Voltage | VF | IF=20mA | 1.20 | 1.40 | V | |
| Reverse Current | IR | VR=5V | 5 | uA | ||
| Collector capacitance | Ct | V=0, f=1MHz | 30 | 250 | pF | |
| Collector to emitter Current | ICEO | VCE=70V, IF=0mA | 150 | n A | ||
| Collector and Emitter attenuation Voltage | BVCEO | IC=0.1mA, IF=0mA | 70 | V | ||
| Emitter and Collector attenuation Voltage | BVECO | IE=10A, IF=0mA | 6 | V | ||
| Transfer Characteristics | ||||||
| Current conversion ratio | CTR | IF=5mA, VCE=5V | 50 | 600 | % | |
| Collector and Emitter Saturation Voltage | VCE(sat) | IF=20mA, IC=1mA | 0.1 | 0.2 | V | |
| Insulation Impedance | Riso | DC500V, 40~60%R.H. | 51010 | 11011 | ||
| Capacitance | Cf | V=0, f=1MHz | 0.6 | 1 | pF | |
| Transforming Frequency | fc | VCE=5V, IC=2mA, RL=100, -3dB | 80 | kHz | ||
| Rise time | tr | VCE=2V, IC=2mA, RL=100 | 6 | 18 | s | |
| Descend Time | tf | 5 | 18 | s | ||
| Current Conversion Ratio Grades | ||||||
| Grade | Sign | Min (%) | Max (%) | |||
| A | A | 100 | 160 | |||
| B | B | 130 | 260 | |||
| C | C | 200 | 400 | |||
| D | D | 300 | 600 | |||
| All Grades | A or B or C or D | 50 | 600 | |||
| Dimensions | ||||||
| Package Type | DIP-4 | SOP-4 | mm (inch) | |||
| Product Ordering Information | ||||||
| Product Name | Package | Packing | Minimum Package | Package Quantity | ||
| PC817X-MS | DIP-4 | Tube | 100PCS/Tube | 1000PCS/Box | ||
| PC817X-MS | SOP-4 | Reel | 2000PCS/Reel | 10000PCS/Box | ||
2401210730_MSKSEMI-PC817C-MS_C7473156.pdf
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